Breakdown mechanisms in AlGaN/GaN HEMT devices are here analyzed, placing particular emphasis in the analysis of GaN based device grown on silicon substrate. Based on combined experimental data and bi-dimensional numerical simulation we demonstrate that many physical mechanisms can contribute to increase the leakage current leading to the final breakdown of the device. In particular we show how band-to-band phenomena, rather than impact ionization, can be responsible of the premature breakdown even in double-heterostructure HEMTs.
Breakdown investigation in GaN-based MIS-HEMTdevices / Marino, F.A., Bisi, D., Meneghini, M., Verzellesi, G., Zanoni, E., Hove, M.V., You, S., Decoutere, S., Marcon, D., Stoffels, S., Ronchi, N., Meneghesso, G.. - ELETTRONICO. - (2014), pp. 377-380. (44th European Solid-State Device Research Conference, ESSDERC 2014 Venezia, Italy September 22-26, 2014) [10.1109/ESSDERC.2014.6948839].
Breakdown investigation in GaN-based MIS-HEMTdevices
VERZELLESI, Giovanni;
2014
Abstract
Breakdown mechanisms in AlGaN/GaN HEMT devices are here analyzed, placing particular emphasis in the analysis of GaN based device grown on silicon substrate. Based on combined experimental data and bi-dimensional numerical simulation we demonstrate that many physical mechanisms can contribute to increase the leakage current leading to the final breakdown of the device. In particular we show how band-to-band phenomena, rather than impact ionization, can be responsible of the premature breakdown even in double-heterostructure HEMTs.
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