In this work, the critical role of carbon doping in the electrical behavior of AlGaN/GaN High Electron Mobility Transistors (HEMTs) on semi-insulating SiC substrates is assessed by investigating the off-state three terminal breakdown, current collapse and dynamic on-resistance recovery at high drain-source voltages. Extensive device simulations of typical GaN HEMT structures are carried out and compared to experimental data from published, state-of-the-art technologies to: i) explain the slope of the breakdown voltage as a function of the gate-to-drain spacing lower than GaN critical electric field as a result of the non-uniform electrical field distribution in the gate-drain access region; ii) attribute the drain current collapse to trapping in deep acceptor states in the buffer associated with carbon doping; iii) interpret the partial dynamic on-resistance recovery after off-state stress at high drain-source voltages as a consequence of hole generation and trapping.
The Role of Carbon Doping on Breakdown, Current Collapse and Dynamic On-Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates / Zagni, Nicolò; Chini, Alessandro; Puglisi, Francesco Maria; Pavan, Paolo; Verzellesi, Giovanni. - In: PHYSICA STATUS SOLIDI. A, APPLICATIONS AND MATERIALS SCIENCE. - ISSN 1862-6300. - (2020), pp. 1900762-1-1900762-5. [10.1002/pssa.201900762]
Data di pubblicazione: | 2020 | |
Data di prima pubblicazione: | 3-dic-2019 | |
Titolo: | The Role of Carbon Doping on Breakdown, Current Collapse and Dynamic On-Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates | |
Autore/i: | Zagni, Nicolò; Chini, Alessandro; Puglisi, Francesco Maria; Pavan, Paolo; Verzellesi, Giovanni | |
Autore/i UNIMORE: | ||
Digital Object Identifier (DOI): | http://dx.doi.org/10.1002/pssa.201900762 | |
Rivista: | ||
Pagina iniziale: | 1900762-1 | |
Pagina finale: | 1900762-5 | |
Codice identificativo ISI: | WOS:000501676200001 | |
Codice identificativo Scopus: | 2-s2.0-85076364850 | |
Citazione: | The Role of Carbon Doping on Breakdown, Current Collapse and Dynamic On-Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates / Zagni, Nicolò; Chini, Alessandro; Puglisi, Francesco Maria; Pavan, Paolo; Verzellesi, Giovanni. - In: PHYSICA STATUS SOLIDI. A, APPLICATIONS AND MATERIALS SCIENCE. - ISSN 1862-6300. - (2020), pp. 1900762-1-1900762-5. [10.1002/pssa.201900762] | |
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