In this work, the critical role of carbon doping in the electrical behavior of AlGaN/GaN High Electron Mobility Transistors (HEMTs) on semi-insulating SiC substrates is assessed by investigating the off-state three terminal breakdown, current collapse and dynamic on-resistance recovery at high drain-source voltages. Extensive device simulations of typical GaN HEMT structures are carried out and compared to experimental data from published, state-of-the-art technologies to: i) explain the slope of the breakdown voltage as a function of the gate-to-drain spacing lower than GaN critical electric field as a result of the non-uniform electrical field distribution in the gate-drain access region; ii) attribute the drain current collapse to trapping in deep acceptor states in the buffer associated with carbon doping; iii) interpret the partial dynamic on-resistance recovery after off-state stress at high drain-source voltages as a consequence of hole generation and trapping.

The Role of Carbon Doping on Breakdown, Current Collapse and Dynamic On-Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates / Zagni, Nicolò; Chini, Alessandro; Puglisi, Francesco Maria; Pavan, Paolo; Verzellesi, Giovanni. - In: PHYSICA STATUS SOLIDI. A, APPLICATIONS AND MATERIALS SCIENCE. - ISSN 1862-6300. - (2020), pp. 1900762-1-1900762-5. [10.1002/pssa.201900762]

I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Powered by IRIS-about IRIS-Utilizzo dei cookie

 Copyright © 2022