In this brief, we investigate the bidirectional threshold voltage drift (VT) following negative-bias temperature instability (NBTI) stress in carbon-doped fully recessed AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs). Several stress conditions were applied at different: 1) gate biases (VGS,STR); 2) stress times (tSTR); and 3) temperatures (T). Both negative and positive VT (thermally activated with different activation energies, EA) were observed depending on the magnitude of VGS,STR. In accordance with the literature, observed VT < 0 V (EA ≈ 0.5 eV) under moderate stress is attributed to the emission of electrons from oxide and interface traps. Instead, VT > 0 V (EA ≈ 0.9 eV) under high stress is attributed to the increased negatively ionized acceptor trap density in the buffer associated with carbon doping.

Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs / Zagni, Nicolo; Cioni, Marcello; Chini, Alessandro; Iucolano, Ferdinando; Puglisi, Francesco Maria; Pavan, Paolo; Verzellesi, Giovanni. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 68:5(2021), pp. 2564-2567. [10.1109/TED.2021.3063664]

Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs

Zagni, Nicolo;Cioni, Marcello;Chini, Alessandro;Puglisi, Francesco Maria;Pavan, Paolo;Verzellesi, Giovanni
2021

Abstract

In this brief, we investigate the bidirectional threshold voltage drift (VT) following negative-bias temperature instability (NBTI) stress in carbon-doped fully recessed AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs). Several stress conditions were applied at different: 1) gate biases (VGS,STR); 2) stress times (tSTR); and 3) temperatures (T). Both negative and positive VT (thermally activated with different activation energies, EA) were observed depending on the magnitude of VGS,STR. In accordance with the literature, observed VT < 0 V (EA ≈ 0.5 eV) under moderate stress is attributed to the emission of electrons from oxide and interface traps. Instead, VT > 0 V (EA ≈ 0.9 eV) under high stress is attributed to the increased negatively ionized acceptor trap density in the buffer associated with carbon doping.
2021
15-mar-2021
68
5
2564
2567
Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs / Zagni, Nicolo; Cioni, Marcello; Chini, Alessandro; Iucolano, Ferdinando; Puglisi, Francesco Maria; Pavan, Paolo; Verzellesi, Giovanni. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 68:5(2021), pp. 2564-2567. [10.1109/TED.2021.3063664]
Zagni, Nicolo; Cioni, Marcello; Chini, Alessandro; Iucolano, Ferdinando; Puglisi, Francesco Maria; Pavan, Paolo; Verzellesi, Giovanni
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1238096
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