In this brief, we investigate the bidirectional threshold voltage drift (VT) following negative-bias temperature instability (NBTI) stress in carbon-doped fully recessed AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs). Several stress conditions were applied at different: 1) gate biases (VGS,STR); 2) stress times (tSTR); and 3) temperatures (T). Both negative and positive VT (thermally activated with different activation energies, EA) were observed depending on the magnitude of VGS,STR. In accordance with the literature, observed VT < 0 V (EA ≈ 0.5 eV) under moderate stress is attributed to the emission of electrons from oxide and interface traps. Instead, VT > 0 V (EA ≈ 0.9 eV) under high stress is attributed to the increased negatively ionized acceptor trap density in the buffer associated with carbon doping.

Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs / Zagni, Nicolo; Cioni, Marcello; Chini, Alessandro; Iucolano, Ferdinando; Puglisi, Francesco Maria; Pavan, Paolo; Verzellesi, Giovanni. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 68:5(2021), pp. 2564-2567. [10.1109/TED.2021.3063664]

Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs

Zagni, Nicolo;Cioni, Marcello;Chini, Alessandro;Puglisi, Francesco Maria;Pavan, Paolo;Verzellesi, Giovanni
2021

Abstract

In this brief, we investigate the bidirectional threshold voltage drift (VT) following negative-bias temperature instability (NBTI) stress in carbon-doped fully recessed AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs). Several stress conditions were applied at different: 1) gate biases (VGS,STR); 2) stress times (tSTR); and 3) temperatures (T). Both negative and positive VT (thermally activated with different activation energies, EA) were observed depending on the magnitude of VGS,STR. In accordance with the literature, observed VT < 0 V (EA ≈ 0.5 eV) under moderate stress is attributed to the emission of electrons from oxide and interface traps. Instead, VT > 0 V (EA ≈ 0.9 eV) under high stress is attributed to the increased negatively ionized acceptor trap density in the buffer associated with carbon doping.
15-mar-2021
68
5
2564
2567
Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs / Zagni, Nicolo; Cioni, Marcello; Chini, Alessandro; Iucolano, Ferdinando; Puglisi, Francesco Maria; Pavan, Paolo; Verzellesi, Giovanni. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 68:5(2021), pp. 2564-2567. [10.1109/TED.2021.3063664]
Zagni, Nicolo; Cioni, Marcello; Chini, Alessandro; Iucolano, Ferdinando; Puglisi, Francesco Maria; Pavan, Paolo; Verzellesi, Giovanni
File in questo prodotto:
File Dimensione Formato  
GaN_TED_BTI_ST_Iris.pdf

accesso aperto

Descrizione: Articolo Principale
Tipologia: Post-print dell'autore (bozza post referaggio)
Dimensione 685.61 kB
Formato Adobe PDF
685.61 kB Adobe PDF Visualizza/Apri
Pubblicazioni consigliate

Caricamento pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1238096
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 6
  • ???jsp.display-item.citation.isi??? 5
social impact