Long term on-state and off-state stress on GaN-AlGaN-GaN HEMTson Sic substrates are presented. Hot carrier effects and theirdependence on bias conditions are evaluated withelectroluminescence measurements. Both hot-electron stressconditions produce drain current gate-lag dispersion and gate current decrease. However on- and off- state stresses induce degradation in different gate-to drain surface device regions, i.e. close to the drain contact for the on-state stress and close to the gate contact in the off-state stress. Furthermore a correlation between gate-leakage current and gate-lag dispersion is also observed.

Hot-electron-stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on SiC / Meneghesso, G.; Pierobon, R.; Rampazzo, F.; Tamiazzo, G.; Zanoni, E.; Bernat, J.; Kordos, P.; Basile, Alberto Francesco; Chini, Alessandro; Verzellesi, Giovanni. - STAMPA. - (2005), pp. 415-422. ((Intervento presentato al convegno 43rd Annual IEEE International Reliability Physics Symposium (IRPS 2005) tenutosi a San Jose (USA) nel 17-21 April 2005 [10.1109/RELPHY.2005.1493122].

Hot-electron-stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on SiC

BASILE, Alberto Francesco;CHINI, Alessandro;VERZELLESI, Giovanni
2005

Abstract

Long term on-state and off-state stress on GaN-AlGaN-GaN HEMTson Sic substrates are presented. Hot carrier effects and theirdependence on bias conditions are evaluated withelectroluminescence measurements. Both hot-electron stressconditions produce drain current gate-lag dispersion and gate current decrease. However on- and off- state stresses induce degradation in different gate-to drain surface device regions, i.e. close to the drain contact for the on-state stress and close to the gate contact in the off-state stress. Furthermore a correlation between gate-leakage current and gate-lag dispersion is also observed.
43rd Annual IEEE International Reliability Physics Symposium (IRPS 2005)
San Jose (USA)
17-21 April 2005
415
422
Meneghesso, G.; Pierobon, R.; Rampazzo, F.; Tamiazzo, G.; Zanoni, E.; Bernat, J.; Kordos, P.; Basile, Alberto Francesco; Chini, Alessandro; Verzellesi, Giovanni
Hot-electron-stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on SiC / Meneghesso, G.; Pierobon, R.; Rampazzo, F.; Tamiazzo, G.; Zanoni, E.; Bernat, J.; Kordos, P.; Basile, Alberto Francesco; Chini, Alessandro; Verzellesi, Giovanni. - STAMPA. - (2005), pp. 415-422. ((Intervento presentato al convegno 43rd Annual IEEE International Reliability Physics Symposium (IRPS 2005) tenutosi a San Jose (USA) nel 17-21 April 2005 [10.1109/RELPHY.2005.1493122].
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

Caricamento pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/467041
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 26
  • ???jsp.display-item.citation.isi??? 22
social impact