Long term on-state and off-state stress on GaN-AlGaN-GaN HEMTson Sic substrates are presented. Hot carrier effects and theirdependence on bias conditions are evaluated withelectroluminescence measurements. Both hot-electron stressconditions produce drain current gate-lag dispersion and gate current decrease. However on- and off- state stresses induce degradation in different gate-to drain surface device regions, i.e. close to the drain contact for the on-state stress and close to the gate contact in the off-state stress. Furthermore a correlation between gate-leakage current and gate-lag dispersion is also observed.
Hot-electron-stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on SiC / Meneghesso, G.; Pierobon, R.; Rampazzo, F.; Tamiazzo, G.; Zanoni, E.; Bernat, J.; Kordos, P.; Basile, Alberto Francesco; Chini, Alessandro; Verzellesi, Giovanni. - STAMPA. - (2005), pp. 415-422. (Intervento presentato al convegno 43rd Annual IEEE International Reliability Physics Symposium (IRPS 2005) tenutosi a San Jose, CA, usa nel 17-21 April 2005) [10.1109/RELPHY.2005.1493122].
Hot-electron-stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on SiC
BASILE, Alberto Francesco;CHINI, Alessandro;VERZELLESI, Giovanni
2005
Abstract
Long term on-state and off-state stress on GaN-AlGaN-GaN HEMTson Sic substrates are presented. Hot carrier effects and theirdependence on bias conditions are evaluated withelectroluminescence measurements. Both hot-electron stressconditions produce drain current gate-lag dispersion and gate current decrease. However on- and off- state stresses induce degradation in different gate-to drain surface device regions, i.e. close to the drain contact for the on-state stress and close to the gate contact in the off-state stress. Furthermore a correlation between gate-leakage current and gate-lag dispersion is also observed.
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