When a triangular shape for the electric field in the base-collector space-charge region of an n-p-n Si BJT (bipolar junction transistor) is assumed, the electron mean energy can be calculated analytically from a simplified energy-balance equation. On this basis a nonlocal-impact-ionization model, suitable for computer-aided circuit simulation, has been obtained and used to calculate the output characteristics at constant emitter-base voltage (grounded base) of advanced devices. Provided the experimental bias-dependent value of the base parasitic resistance is accounted for in the device model, the base-collector voltage at which impact-ionization-induced snap-back occurs can be accurately predicted.

Prediction of impact-ionization-induced snap-back in advanced Si n-p-n BJTs by means of a non-local analytical model for the avalanche multiplication factor / Verzellesi, Giovanni; Baccarani, G.; Canali, Claudio; Pavan, Paolo; Vendrame, L.; Zanoni, E.. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - STAMPA. - 40:(1993), pp. 2296-2300.

Prediction of impact-ionization-induced snap-back in advanced Si n-p-n BJTs by means of a non-local analytical model for the avalanche multiplication factor

VERZELLESI, Giovanni;CANALI, Claudio;PAVAN, Paolo;
1993-01-01

Abstract

When a triangular shape for the electric field in the base-collector space-charge region of an n-p-n Si BJT (bipolar junction transistor) is assumed, the electron mean energy can be calculated analytically from a simplified energy-balance equation. On this basis a nonlocal-impact-ionization model, suitable for computer-aided circuit simulation, has been obtained and used to calculate the output characteristics at constant emitter-base voltage (grounded base) of advanced devices. Provided the experimental bias-dependent value of the base parasitic resistance is accounted for in the device model, the base-collector voltage at which impact-ionization-induced snap-back occurs can be accurately predicted.
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Prediction of impact-ionization-induced snap-back in advanced Si n-p-n BJTs by means of a non-local analytical model for the avalanche multiplication factor / Verzellesi, Giovanni; Baccarani, G.; Canali, Claudio; Pavan, Paolo; Vendrame, L.; Zanoni, E.. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - STAMPA. - 40:(1993), pp. 2296-2300.
Verzellesi, Giovanni; Baccarani, G.; Canali, Claudio; Pavan, Paolo; Vendrame, L.; Zanoni, E.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/460381
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