We analyze the off-state, three-terminal, lateral breakdown in AlGaN/GaN HEMTs for power switching applications by comparing two-dimensional numerical device simulations with experimental data from device structures with different gate-to-drain spacing and with either undoped or Carbon-doped GaN buffer layer. Our simulations reproduce the different breakdown-voltage dependence on the gate-drain-spacing exhibited by the two types of device and attribute the breakdown to: i) a combination of gate electron injection and source-drain punch-through in the undoped HEMTs; and ii) avalanche generation triggered by gate electron injection in the C-doped HEMTs.

Insights into the off-state breakdown mechanisms in power GaN HEMTs / Zagni, Nicolo'; Puglisi, F. M.; Pavan, P.; Chini, A.; Verzellesi, G.. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - 100-101:(2019), pp. 113374-1-113374-5. [10.1016/j.microrel.2019.06.066]

Insights into the off-state breakdown mechanisms in power GaN HEMTs

ZAGNI, NICOLO'
;
Puglisi, F. M.;Pavan, P.;Chini, A.;Verzellesi, G.
2019

Abstract

We analyze the off-state, three-terminal, lateral breakdown in AlGaN/GaN HEMTs for power switching applications by comparing two-dimensional numerical device simulations with experimental data from device structures with different gate-to-drain spacing and with either undoped or Carbon-doped GaN buffer layer. Our simulations reproduce the different breakdown-voltage dependence on the gate-drain-spacing exhibited by the two types of device and attribute the breakdown to: i) a combination of gate electron injection and source-drain punch-through in the undoped HEMTs; and ii) avalanche generation triggered by gate electron injection in the C-doped HEMTs.
23-set-2019
100-101
113374-1
113374-5
Insights into the off-state breakdown mechanisms in power GaN HEMTs / Zagni, Nicolo'; Puglisi, F. M.; Pavan, P.; Chini, A.; Verzellesi, G.. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - 100-101:(2019), pp. 113374-1-113374-5. [10.1016/j.microrel.2019.06.066]
Zagni, Nicolo'; Puglisi, F. M.; Pavan, P.; Chini, A.; Verzellesi, G.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1183975
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