High-voltage InGaAs-InAlAs HEMTs featuring optimized field-plate structures are being developed. A TCAD approach has been adopted for their design. Two-dimensional device simulations have preliminarily been calibrated by comparison with DC and RF measurements from the baseline InP HEMT technology into which the field plate is being incorporated. Simulations have then been used to design field-plate structures with optimal length andpassivation thickness.
TCAD optimization of field-plated InAlAs-InGaAs HEMTs / Saguatti, Davide; Chini, Alessandro; Verzellesi, Giovanni; M., Mohamad Isa; K. W., Ian; M., Missous. - STAMPA. - (2010), pp. 337-339. (Intervento presentato al convegno 22nd International Conference on Indium Phosphide and Related Materials (IRPS) tenutosi a Kagawa, Japan nel 31 May-4 June 2010) [10.1109/ICIPRM.2010.5516397].
TCAD optimization of field-plated InAlAs-InGaAs HEMTs
SAGUATTI, Davide;CHINI, Alessandro;VERZELLESI, Giovanni;
2010
Abstract
High-voltage InGaAs-InAlAs HEMTs featuring optimized field-plate structures are being developed. A TCAD approach has been adopted for their design. Two-dimensional device simulations have preliminarily been calibrated by comparison with DC and RF measurements from the baseline InP HEMT technology into which the field plate is being incorporated. Simulations have then been used to design field-plate structures with optimal length andpassivation thickness.
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