In a combined experimental and numerical investigation, we present the effects of trap-assisted tunneling on the sub-threshold forward bias characteristics of a blue InGaN/GaN single-quantum-well LED test structure grown on a SiC substrate. The different role of donor- and acceptor-like traps has been studied, for the information it can provide on the role played by point defects. Using the energy Et and trap density Nt as the only tunneling-related fitting parameters, the behavior of the measured I(V) curves is well reproduced by our model over a wide current and temperature range. The very good agreement between simulations and experiments suggests that trap-assisted forward tunneling is one of the most relevant contributions to the current flow below the optical turn-on of the diode.

Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes / Mandurrino, Marco; Verzellesi, Giovanni; Goano, Michele; Vallone, Marco; Bertazzi, Francesco; Ghione, Giovanni; Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico. - In: PHYSICA STATUS SOLIDI. A, APPLICATIONS AND MATERIALS SCIENCE. - ISSN 1862-6300. - STAMPA. - 212:5(2015), pp. 947-953.

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