A systematic analysis of the reliability of GaN HEMT technologies for space applications in L-, S- and C- band up to 6 GHz (GH50, gate length 0,5 um) and C-, X- and Ku-band up to 20 GHz (GH25, gate length 0.25 um) has been carried out by means of on-wafer short-term (<24 h) tests, long-term high temperature storage and life tests. Specific long-term tests included: (1) 4000h thermal storage at three different temperatures (300°C, 325°C and 350°C); (2) 4000h DC life-test at 250°C, 300°C and 350°C junction temperature at a VDS value of 50 V and to 30 V respectively for GH50 and GH25 and at other bias points, up to VDS=100 V (GH50) and 60 V (GH25); (3) 500h RF life-tests at Tj=350°C, VDS=50V, IDS=50mA/mm, 1.7 GHz for GH50, and at Tj=325°C, VDS=30V, IDS=100mA/mm, 9 GHz for GH25, respectively. For both RF tests the input power corresponding to the maximum PAE value was selected. For all tested devices, degradation of main DC and RF parameters has been very limited. Even at 350°C, the highest temperature adopted for both thermal storage and life tests, the decrease of drain saturation current or transconductance did not exceed 20% after 4000 hours.

A comprehensive reliability evaluation of high-performance AlGaN/GaN HEMTs for space applications / De Santi, Carlo; Dalcanale, Stefano; Stocco, Antonio; Rampazzo, Fabiana; Gerardin, Simone; Meneghini, Matteo; Meneghesso, Gaudenzio; Chini, Alessandro; Verzellesi, Giovanni; Grünenpütt, Jan; Lambert, Benoit; Schauwecker, Bernd; Blanck, Hervé; Zanoni, Andrew Barnes and E.. - (2016). ((Intervento presentato al convegno 8th Wide Bandgap Semiconductors and Components Workshop tenutosi a Harwell, UK nel 12-13 September 2016.

A comprehensive reliability evaluation of high-performance AlGaN/GaN HEMTs for space applications

Alessandro Chini;Giovanni Verzellesi;
2016

Abstract

A systematic analysis of the reliability of GaN HEMT technologies for space applications in L-, S- and C- band up to 6 GHz (GH50, gate length 0,5 um) and C-, X- and Ku-band up to 20 GHz (GH25, gate length 0.25 um) has been carried out by means of on-wafer short-term (<24 h) tests, long-term high temperature storage and life tests. Specific long-term tests included: (1) 4000h thermal storage at three different temperatures (300°C, 325°C and 350°C); (2) 4000h DC life-test at 250°C, 300°C and 350°C junction temperature at a VDS value of 50 V and to 30 V respectively for GH50 and GH25 and at other bias points, up to VDS=100 V (GH50) and 60 V (GH25); (3) 500h RF life-tests at Tj=350°C, VDS=50V, IDS=50mA/mm, 1.7 GHz for GH50, and at Tj=325°C, VDS=30V, IDS=100mA/mm, 9 GHz for GH25, respectively. For both RF tests the input power corresponding to the maximum PAE value was selected. For all tested devices, degradation of main DC and RF parameters has been very limited. Even at 350°C, the highest temperature adopted for both thermal storage and life tests, the decrease of drain saturation current or transconductance did not exceed 20% after 4000 hours.
8th Wide Bandgap Semiconductors and Components Workshop
Harwell, UK
12-13 September 2016
De Santi, Carlo; Dalcanale, Stefano; Stocco, Antonio; Rampazzo, Fabiana; Gerardin, Simone; Meneghini, Matteo; Meneghesso, Gaudenzio; Chini, Alessandro; Verzellesi, Giovanni; Grünenpütt, Jan; Lambert, Benoit; Schauwecker, Bernd; Blanck, Hervé; Zanoni, Andrew Barnes and E.
A comprehensive reliability evaluation of high-performance AlGaN/GaN HEMTs for space applications / De Santi, Carlo; Dalcanale, Stefano; Stocco, Antonio; Rampazzo, Fabiana; Gerardin, Simone; Meneghini, Matteo; Meneghesso, Gaudenzio; Chini, Alessandro; Verzellesi, Giovanni; Grünenpütt, Jan; Lambert, Benoit; Schauwecker, Bernd; Blanck, Hervé; Zanoni, Andrew Barnes and E.. - (2016). ((Intervento presentato al convegno 8th Wide Bandgap Semiconductors and Components Workshop tenutosi a Harwell, UK nel 12-13 September 2016.
File in questo prodotto:
File Dimensione Formato  
abstract ESA-WBSC workshop 2106_rev1 EZ extended.pdf

non disponibili

Tipologia: Abstract
Dimensione 883.9 kB
Formato Adobe PDF
883.9 kB Adobe PDF   Visualizza/Apri   Richiedi una copia
Pubblicazioni consigliate

Caricamento pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/1162448
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? ND
social impact