VERZELLESI, Giovanni
 Distribuzione geografica
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Continente #
NA - Nord America 2.137
EU - Europa 1.134
AS - Asia 975
AF - Africa 31
SA - Sud America 9
OC - Oceania 7
Continente sconosciuto - Info sul continente non disponibili 4
Totale 4.297
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Nazione #
US - Stati Uniti d'America 2.078
IT - Italia 434
CN - Cina 274
TW - Taiwan 210
JP - Giappone 150
DE - Germania 148
FR - Francia 125
IN - India 115
GB - Regno Unito 90
NL - Olanda 75
CA - Canada 57
KR - Corea 49
HK - Hong Kong 42
SG - Singapore 35
AT - Austria 34
BE - Belgio 32
SE - Svezia 31
CZ - Repubblica Ceca 30
RU - Federazione Russa 29
IE - Irlanda 23
DZ - Algeria 17
MY - Malesia 16
VN - Vietnam 16
UA - Ucraina 14
CH - Svizzera 12
GR - Grecia 12
TR - Turchia 10
IR - Iran 9
ZA - Sudafrica 9
FI - Finlandia 8
AE - Emirati Arabi Uniti 7
BD - Bangladesh 7
ES - Italia 7
HU - Ungheria 7
JO - Giordania 7
RO - Romania 7
AU - Australia 6
ID - Indonesia 6
LK - Sri Lanka 5
PL - Polonia 5
BR - Brasile 4
SA - Arabia Saudita 4
CL - Cile 3
EU - Europa 3
IL - Israele 3
LT - Lituania 3
PH - Filippine 3
TH - Thailandia 3
BY - Bielorussia 2
ET - Etiopia 2
MA - Marocco 2
MX - Messico 2
PK - Pakistan 2
A1 - Anonimo 1
AR - Argentina 1
BG - Bulgaria 1
DK - Danimarca 1
EG - Egitto 1
LB - Libano 1
LV - Lettonia 1
MO - Macao, regione amministrativa speciale della Cina 1
NO - Norvegia 1
NZ - Nuova Zelanda 1
RS - Serbia 1
SK - Slovacchia (Repubblica Slovacca) 1
VE - Venezuela 1
Totale 4.297
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Città #
Fairfield 289
Houston 225
Ashburn 144
Santa Cruz 144
Ann Arbor 132
Taipei 114
Woodbridge 105
Seattle 94
Cambridge 90
Wilmington 77
Milan 75
San Diego 68
Beijing 56
Modena 52
Padova 51
Buffalo 44
Bengaluru 36
Duncan 34
Des Moines 33
Tokyo 31
Kaohsiung City 27
Roermond 26
Boardman 24
Osaka 24
Xian 23
Dublin 22
Council Bluffs 20
Stockholm 20
Los Angeles 17
Nanjing 17
Ottawa 17
Shenzhen 17
Bremen 16
Guangzhou 16
Toronto 16
Villach 15
Hsinchu 14
Central 13
Chicago 13
Parma 13
San Jose 13
Mountain View 12
Seoul 12
Bayan Lepas 10
Bristol 10
Central District 10
Dong Ket 10
Hangzhou 10
Saint Petersburg 10
Shanghai 10
Singapore 10
Amsterdam 9
Dalian 9
Paris 9
Tehran 9
Brussels 8
London 8
Makuharihongo 8
Muizenberg 8
Munich 8
Nagoya 8
Tainan City 8
Amman 7
Ankara 7
Atlanta 7
Bangalore 7
Boston 7
Boulder 7
Chengdu 7
Hyderabad 7
Leuven 7
Marseille 7
Sarcedo 7
Burnaby 6
Delhi 6
Elst 6
George Town 6
Giarre 6
Heverlee 6
Huilong 6
Jinan 6
Las Vegas 6
New Taipei 6
New York 6
Norwalk 6
Piacenza 6
Southend 6
Vigonza 6
Aachen 5
Annaba 5
Bologna 5
Budapest 5
Cedar Knolls 5
Coimbatore 5
Correggio 5
Fremont 5
Gif-sur-yvette 5
Gurgaon 5
Hefei 5
Jakarta 5
Totale 2.700
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Nome #
“Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs, file e31e124e-b611-987f-e053-3705fe0a095a 496
Partial Recovery of Dynamic RON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs, file e31e124f-c2d7-987f-e053-3705fe0a095a 431
The effects of carbon on the bidirectional threshold voltage instabilities induced by negative gate bias stress in GaN MIS-HEMTs, file e31e124e-5629-987f-e053-3705fe0a095a 325
The Role of Carbon Doping on Breakdown, Current Collapse and Dynamic On-Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates, file e31e124d-e2a6-987f-e053-3705fe0a095a 322
Off-state breakdown characteristics of AlGaN/GaN MIS-HEMTs for switching power applications, file e31e124c-9e32-987f-e053-3705fe0a095a 284
Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs, file e31e124f-8157-987f-e053-3705fe0a095a 271
Modeling challenges for high-efficiency visible light-emitting diodes, file e31e124c-a840-987f-e053-3705fe0a095a 259
Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs, file e31e124f-2683-987f-e053-3705fe0a095a 249
Characterization and TCAD Modeling of Mixed-Mode Stress Induced by Impact Ionization in Scaled SiGe HBTs, file e31e124e-9f7a-987f-e053-3705fe0a095a 242
Insights into the off-state breakdown mechanisms in power GaN HEMTs, file e31e124f-c08c-987f-e053-3705fe0a095a 208
GaN-based power devices: Physics, reliability, and perspectives, file e31e124f-b78c-987f-e053-3705fe0a095a 169
Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues, file e31e124e-0e4a-987f-e053-3705fe0a095a 155
Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-Of-The-Roadmap III-V MOSFETs, file e31e124e-90f6-987f-e053-3705fe0a095a 139
Threshold Voltage Statistical Variability and Its Sensitivity to Critical Geometrical Parameters in Ultrascaled InGaAs and Silicon FETs, file e31e124f-a9f8-987f-e053-3705fe0a095a 136
Experimental and Numerical Analysis of Hole Emission Process from Carbon-Related Traps in GaN Buffer Layers, file e31e124e-9894-987f-e053-3705fe0a095a 130
Effects of mole fraction variations and scaling on total variability in InGaAs MOSFETs, file e31e124f-c658-987f-e053-3705fe0a095a 120
The impact of interface and border traps on current–voltage, capacitance–voltage, and split‐CV mobility measurements in InGaAs MOSFETs, file e31e124f-c49f-987f-e053-3705fe0a095a 110
On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon‐Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs, file e31e124f-9c3a-987f-e053-3705fe0a095a 103
Experimental and numerical investigation of Poole-Frenkel effect on dynamic RON transients in C-doped p-GaN HEMTs, file e31e124f-91d2-987f-e053-3705fe0a095a 39
GaN-based power devices: Physics, reliability, and perspectives, file 6dbdc7f3-fdb2-4bcb-9d04-dd1978d7f13e 32
Failure Physics and Reliability of GaN-Based HEMTs for Microwave and Millimeter-Wave Applications: A Review of Consolidated Data and Recent Results, file 70da4a3a-c9b4-480b-8940-67b7a3aa7321 32
High-Resolution Photoemission Study of Neutron-Induced Defects in Amorphous Hydrogenated Silicon Devices, file 1476fa62-7e5f-4b90-a2dc-ebe68b38da50 24
Vertex detector for the SuperB factory, file e31e124e-1def-987f-e053-3705fe0a095a 17
3D Detectors on Hydrogenated Amorphous Silicon for particle tracking in high radiation environment, file e31e124e-902a-987f-e053-3705fe0a095a 13
Editorial for the Special Issue on Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II, file 779bec64-2299-4ece-bbb1-ee6470da86d2 12
Temperature-Independent Current Dispersion in 0.15 μm AlGaN/GaN HEMTs for 5G Applications, file d9ceddae-284f-4a83-904a-1d8f5352ce85 11
Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al$_{\text{2}}$O$_{\text{3}}$/GaN MOS Capacitors, file 439d3b3e-fa3d-44aa-99d8-eaa98307bacf 10
Fabrication of a hydrogenated amorphous silicon detector in 3-d geometry and preliminary test on planar prototypes, file abee082a-3f6d-4e6f-b9a6-609aeb6498b3 10
Gate-Bias Induced RON Instability in p-GaN Power HEMTs, file 1ad44d5f-fca6-4f92-a132-0a8305f39de2 7
Testing of planar hydrogenated amorphous silicon sensors with charge selective contacts for the construction of 3D-detectors, file b95c404f-cef3-4c17-92eb-b7a2e601f48a 7
Impact of programming charge distribution on threshold voltage and subthreshold slope of NROM memory cells, file 85ad30be-fa8a-43f1-8f9b-a6fb8d0483ba 6
Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability, file ad576623-bf94-4a18-a901-d20a428a90c4 4
Modeling a Thick Hydrogenated Amorphous Silicon Substrate for Ionizing Radiation Detectors, file e31e124e-479e-987f-e053-3705fe0a095a 4
Influence of Buffer Carbon Doping on Pulse and AC Behavior of Insulated-Gate Field-Plated Power AlGaN/GaN HEMTs, file e31e124b-4525-987f-e053-3705fe0a095a 2
Surface-related drain current dispersion effects in AlGaN-GaN HEMTs, file e31e124a-95bc-987f-e053-3705fe0a095a 1
Investigation of Efficiency-Droop Mechanisms in Multi-Quantum-Well InGaN/GaN Blue Light-Emitting Diodes, file e31e124b-384d-987f-e053-3705fe0a095a 1
Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies, file e31e124b-4366-987f-e053-3705fe0a095a 1
Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs, file e31e124b-b8a1-987f-e053-3705fe0a095a 1
Transient Phenomena in GaAs and GaN Devices, including Electroluminescence and Emission Spectroscopy, for Future THz Applications, file e31e124b-c29d-987f-e053-3705fe0a095a 1
Correlation between dynamic Rdson transients and Carbon related buffer traps in AlGaN/GaN HEMTs, file e31e124b-e0fa-987f-e053-3705fe0a095a 1
Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon, file e31e124d-94a8-987f-e053-3705fe0a095a 1
Totale 4.386
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Categoria #
all - tutte 12.406
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 12.406
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/201936 0 0 0 0 0 0 0 0 0 8 16 12
2019/2020154 12 7 7 11 8 17 17 20 23 15 10 7
2020/2021929 8 8 60 37 20 90 179 54 103 83 135 152
2021/20221.536 98 86 122 227 177 123 96 90 130 84 209 94
2022/20231.205 69 84 160 101 87 120 77 80 118 107 108 94
2023/2024472 96 143 79 21 16 21 25 21 21 29 0 0
Totale 4.386