The radiation response of FOXFETs has been studied for proton, gamma and neutron exposures. The punch-through behaviour, which represents the normal FET operating conditions in Si microstrip detectors, has been found to be much less sensitive to radiation damage than threshold voltage. The device performance has been elucidated by means of two-dimensional simulations. The main radiation effects have been also taken into account in the numerical analysis and separately examined.
RADIATION TOLERANCE OF THE FOXFET BIASING SCHEME FOR AC-COUPLED SI MICROSTRIP DETECTORS / Bacchetta, N; Bisello, D; Canali, Claudio; DA ROS, R; Fuochi, Pg; Fusaro, G; Giraldo, A; Gotra, Y; Paccagnella, A; Verzellesi, Giovanni. - In: IEEE TRANSACTIONS ON NUCLEAR SCIENCE. - ISSN 0018-9499. - STAMPA. - 40:(1993), pp. 1602-1609.
RADIATION TOLERANCE OF THE FOXFET BIASING SCHEME FOR AC-COUPLED SI MICROSTRIP DETECTORS
CANALI, Claudio;VERZELLESI, Giovanni
1993
Abstract
The radiation response of FOXFETs has been studied for proton, gamma and neutron exposures. The punch-through behaviour, which represents the normal FET operating conditions in Si microstrip detectors, has been found to be much less sensitive to radiation damage than threshold voltage. The device performance has been elucidated by means of two-dimensional simulations. The main radiation effects have been also taken into account in the numerical analysis and separately examined.
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