Off-state breakdown characteristics of AlGaN/GaN MIS-HEMTs for switching power applications

A consistent description of breakdown characteristics in ohmic-to-ohmic, ohmic-to-substrate and HEMT structures has been achieved by means of device simulations for a depletion-mode AlGaN/GaN MIS-HEMT technology on Si substrate suited for power switching applications. For relatively short gate-drain distances or ohmic-to-ohmic spacings, source-drain punch-through is suggested to be the limiting breakdown mechanism in either HEMTs under off-state conditions or ohmic-to-ohmic isolation test structures, respectively. The mechanism ultimately limiting the HEMT off-state voltage blocking capability is instead the vertical drain-to-substrate breakdown for long gate-drain spacings. The latter phenomenon is induced, in HEMTs on a low-resistivity p-type substrate like those considered here, by the triggering of a high-field carrier generation mechanism rather than by carrier injection.