We describe an approach to modelling of power GaN HEMTs, aimed at full sys-tem optimization through concurrent simulation of device, package, and applica-tion. We believe this “virtual prototyping” approach is an effective means to link fundamental understanding of the device properties to circuit- and system-level performance. Results are specifically presented from detailed simulations and comparison with experiments for both normally-on insulated-gate GaN HEMTs and normally-off pGaN devices in real switching applications.
Modelling of GaN HEMTs: From Device-Level Simulation to Virtual Prototyping / Curatola, G., Verzellesi, G. - In: Power GaN Devices / [a cura di] Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico. - 233 SPRING STREET, NEW YORK, NY 10013, UNITED STATES : Springer International Publishing, 2017. - ISBN 978-3-319-43197-0. - pp. 165-196 [10.1007/978-3-319-43199-4_8]
Modelling of GaN HEMTs: From Device-Level Simulation to Virtual Prototyping
VERZELLESI, Giovanni
2017
Abstract
We describe an approach to modelling of power GaN HEMTs, aimed at full sys-tem optimization through concurrent simulation of device, package, and applica-tion. We believe this “virtual prototyping” approach is an effective means to link fundamental understanding of the device properties to circuit- and system-level performance. Results are specifically presented from detailed simulations and comparison with experiments for both normally-on insulated-gate GaN HEMTs and normally-off pGaN devices in real switching applications.
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