This work presents measurements of the charge-collection properties of 4H-SiC Schottky diodes under alpha radiation and investigates the influence of native and alpha induced defects on the detector performance. The contribution of the diffusion of minority carriers to the charge collection efficiency is pointed out. Vaues of 500 ns and 95 us are inferred for the hole and electron lifetime respectively.
Charge particle detection properties of epitaxial 4H-SiC Schottky diodes / Nava, Filippo; P., Vanni; Verzellesi, Giovanni; A., Castaldini; A., Cavallini; L., Polenta; R., Nipoti; C., Donolato. - STAMPA. - 353-356:(2001), pp. 757-762. (Intervento presentato al convegno 3rd European Conference on Silicon Carbide and Related Materials tenutosi a KLOSTER BANZ, GERMANY nel SEP, 2000) [10.4028/www.scientific.net/MSF.353-356.757].
Charge particle detection properties of epitaxial 4H-SiC Schottky diodes
NAVA, Filippo;VERZELLESI, Giovanni;
2001
Abstract
This work presents measurements of the charge-collection properties of 4H-SiC Schottky diodes under alpha radiation and investigates the influence of native and alpha induced defects on the detector performance. The contribution of the diffusion of minority carriers to the charge collection efficiency is pointed out. Vaues of 500 ns and 95 us are inferred for the hole and electron lifetime respectively.
Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris
