This paper presents a Novel low noise, high breakdown InAlAs/InGaAspseudomorphic High Electron Mobility Transistors (pHEMTs). Theimprovements in breakdown voltage are brought about by a judiciouscombination of epitaxial layer design and field plate techniques. No significant degradations of DC and RF characteristics are observed for devices with field plate structures. An outstanding improvement in breakdown voltages of >30% is attained by field plate devices which should allow their usage in efficient high-added power efficiency amplifiers design.
Fabrication of novel high frequency and high breakdown InAlAs-InGaAs pHEMTs / M., Mohamad Isa; Saguatti, Davide; Verzellesi, Giovanni; Chini, Alessandro; K. W., Ian; M., Missous. - STAMPA. - (2010), pp. 41-44. (Intervento presentato al convegno 18th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010 tenutosi a Smolenice, svk nel 25-27 Oct. 2010) [10.1109/ASDAM.2010.5666354].
Fabrication of novel high frequency and high breakdown InAlAs-InGaAs pHEMTs
SAGUATTI, Davide;VERZELLESI, Giovanni;CHINI, Alessandro;
2010
Abstract
This paper presents a Novel low noise, high breakdown InAlAs/InGaAspseudomorphic High Electron Mobility Transistors (pHEMTs). Theimprovements in breakdown voltage are brought about by a judiciouscombination of epitaxial layer design and field plate techniques. No significant degradations of DC and RF characteristics are observed for devices with field plate structures. An outstanding improvement in breakdown voltages of >30% is attained by field plate devices which should allow their usage in efficient high-added power efficiency amplifiers design.
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