PAVAN, Paolo
 Distribuzione geografica
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Continente #
NA - Nord America 41.745
AS - Asia 19.667
EU - Europa 16.049
SA - Sud America 2.018
Continente sconosciuto - Info sul continente non disponibili 511
AF - Africa 284
OC - Oceania 21
Totale 80.295
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Nazione #
US - Stati Uniti d'America 40.947
CN - Cina 5.966
SG - Singapore 5.725
GB - Regno Unito 4.468
IT - Italia 3.476
HK - Hong Kong 2.682
DE - Germania 1.621
SE - Svezia 1.617
BR - Brasile 1.546
VN - Vietnam 1.332
KR - Corea 1.041
FI - Finlandia 769
FR - Francia 755
PL - Polonia 736
BD - Bangladesh 709
UA - Ucraina 628
RU - Federazione Russa 572
TR - Turchia 569
IN - India 431
CA - Canada 410
BG - Bulgaria 293
NL - Olanda 249
JP - Giappone 217
PT - Portogallo 190
MX - Messico 154
AR - Argentina 147
TW - Taiwan 146
ID - Indonesia 133
ES - Italia 112
IQ - Iraq 108
BE - Belgio 88
ZA - Sudafrica 85
CO - Colombia 82
PK - Pakistan 80
EC - Ecuador 77
IE - Irlanda 77
AE - Emirati Arabi Uniti 74
MY - Malesia 67
CH - Svizzera 61
CR - Costa Rica 58
LT - Lituania 55
AT - Austria 52
PH - Filippine 48
IL - Israele 46
CL - Cile 44
SA - Arabia Saudita 44
MA - Marocco 43
VE - Venezuela 42
JM - Giamaica 36
UZ - Uzbekistan 32
EG - Egitto 28
GR - Grecia 27
NP - Nepal 25
DZ - Algeria 24
IR - Iran 24
PY - Paraguay 24
TH - Thailandia 24
CZ - Repubblica Ceca 23
JO - Giordania 23
LU - Lussemburgo 23
TN - Tunisia 23
PE - Perù 22
RO - Romania 22
TT - Trinidad e Tobago 21
EE - Estonia 20
BY - Bielorussia 18
PR - Porto Rico 18
UY - Uruguay 17
AZ - Azerbaigian 16
KE - Kenya 16
AL - Albania 15
GT - Guatemala 14
HN - Honduras 14
OM - Oman 14
AU - Australia 13
DK - Danimarca 13
DO - Repubblica Dominicana 13
HU - Ungheria 13
NI - Nicaragua 12
SN - Senegal 12
BO - Bolivia 11
EU - Europa 11
KZ - Kazakistan 11
BB - Barbados 10
ET - Etiopia 10
PS - Palestinian Territory 10
SV - El Salvador 10
LB - Libano 9
NO - Norvegia 9
RS - Serbia 9
BH - Bahrain 8
GE - Georgia 8
NZ - Nuova Zelanda 8
SK - Slovacchia (Repubblica Slovacca) 8
CG - Congo 7
GP - Guadalupe 7
AO - Angola 6
CW - ???statistics.table.value.countryCode.CW??? 6
GY - Guiana 6
HR - Croazia 6
Totale 79.681
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Città #
Ashburn 5.118
Singapore 3.645
Fairfield 3.530
Santa Clara 3.125
Southend 3.074
Hong Kong 2.601
Hefei 2.416
San Jose 2.152
Woodbridge 2.152
Chandler 1.846
Houston 1.843
Seattle 1.459
Jacksonville 1.246
Wilmington 1.179
Cambridge 1.169
Council Bluffs 1.115
Ann Arbor 1.114
Chicago 1.016
Dearborn 868
Nyköping 867
Beijing 819
London 801
Seoul 785
Warsaw 714
Los Angeles 627
Modena 534
The Dalles 529
Helsinki 518
Milan 462
Ho Chi Minh City 450
New York 440
San Diego 355
Izmir 317
Hanoi 304
Grafing 298
Princeton 276
Sofia 275
Buffalo 266
Columbus 231
Eugene 220
Lauterbourg 209
Dallas 192
Boardman 182
Des Moines 171
São Paulo 163
Rome 159
Shanghai 157
Salt Lake City 148
Moscow 145
Redwood City 145
Bremen 142
Tokyo 139
Bologna 132
Guangzhou 129
Munich 128
Frankfurt am Main 123
Atlanta 110
Falkenstein 107
Brooklyn 93
Orem 90
Phoenix 85
Toronto 84
Chennai 80
Tampa 70
Da Nang 68
Jakarta 68
Saint Augustine 67
Taipei 67
San Francisco 66
Montreal 63
Denver 60
Wuhan 59
Nanjing 57
Reggio Emilia 54
Kent 53
Paris 52
Dublin 51
Dhaka 49
Miano 49
Brussels 46
Elk Grove Village 46
Haiphong 46
Mexico City 46
Amsterdam 45
Baghdad 45
Dresden 44
Boston 43
Rio de Janeiro 43
Falls Church 42
Delfgauw 41
Newark 41
Norwalk 39
Redondo Beach 39
Turin 39
Verona 39
Philadelphia 38
Washington 38
Zhengzhou 38
Brantford 37
Johannesburg 37
Totale 55.694
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Nome #
Unimore Resistive Random Access Memory (RRAM) Verilog-A Model 1.0.0 834
A Complete Statistical Investigation of RTN in HfO₂-Based RRAM in High Resistive State 796
XBW s.r.l. - Mechatronic Solutions 760
A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis 742
Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges 608
Leakage current in HfO2 stacks: from physical to compact modeling 523
Control of brushless DC motor with static redundancy for force-feedback in steer-by-wire applications 516
The Role of Carbon Doping on Breakdown, Current Collapse and Dynamic On-Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates 430
Active Safety System with RF Energy Harvesting Capabilities for Industrial Applications using Interchangeable Implements 425
A microscopic physical description of RTN current fluctuations in HfOx RRAM 422
Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices 417
A new verilog-A compact model of random telegraph noise in oxide-based RRAM for advanced circuit design 416
Anomalous random telegraph noise and temporary phenomena in resistive random access memory 415
Photovoltaic scavenging systems: Modeling and optimization 414
250mV Input Boost Converter for Low Power Applications 413
A WSN System Powered by Vibrations to Improve Safety of Machinery with Trailer 411
A new compact DC model of floating gate memory cells without capacitive coupling coefficients 407
Can NROM, a 2 Bit, Trapping Storage NVM Cell, Give a Real Challenge to Floating Gate Cells? 405
Random telegraph noise: Measurement, data analysis, and interpretation 404
A Compact Model of Hafnium-Oxide-Based Resistive Random Access Memory 402
Recommended Methods to Study Resistive Switching Devices 402
Threshold Voltage Statistical Variability and Its Sensitivity to Critical Geometrical Parameters in Ultrascaled InGaAs and Silicon FETs 400
A Comprehensive Understanding of the Erase of TANOS Memories Through Charge Separation Experiments and Simulations 398
A new experimental technique for extracting base resistance and characterizing current crowding phenomena in bipolar transistors 394
Optimized Energy-Aware Wireless System for Identification of the Relative Positioning of Articulated Systems in the Free Space 386
Characterization of anomalous Random Telegraph Noise in Resistive Random Access Memory 385
An autonomous wireless sensor network device powered by a RF energy harvesting system 382
A Solar Energy Harvesting Circuit for Low Power Applications 377
RF to DC CMOS rectifier with high efficiency over a wide input power range for RFID applications 376
The impact of interface and border traps on current–voltage, capacitance–voltage, and split‐CV mobility measurements in InGaAs MOSFETs 375
Effects of Border Traps on Transfer Curve Hysteresis and Split-CV Mobility Measurement in InGaAs Quantum-Well MOSFETs 375
embit s.r.l. 374
Prediction of impact-ionization-induced snap-back in advanced Si n-p-n BJTs by means of a non-local analytical model for the avalanche multiplication factor 371
AlN-based MEMS devices for vibrational energy harvesting applications 370
Probing defects generation during stress in high-κ/metal gate FinFETs by random telegraph noise characterization 370
A consistent picture of cycling dispersion of resistive states in HfOx resistive random access memory 363
Understanding current instabilities in conductive atomic force microscopy 363
System With RF Power Delivery Capabilities for Active Safety Enhancement in Industrial Vehicles Using Interchangeable Implements 362
“Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs 360
A multi-scale methodology connecting device physics to compact models and circuit applications for OxRAM technology 359
A new model of gate capacitance as a simple tool to extract MOS parameters 357
Photovoltaic Cell Modeling for Solar Energy Powered Sensor Networks 355
Solar Energy Harvesting: applicazioni a bassa potenza 354
A Novel Program-Verify Algorithm for Multi-Bit Operation in HfO2 RRAM 353
Characterization and Modeling of Low-Cost Contact-Mode Triboelectric Devices for Energy Harvesting 352
Temperature impact on the reset operation in HfO2 RRAM 351
A Vibration-Powered Wireless System to Enhance Safety in Agricultural Machinery 351
Enhancing Safety in Vehicles with Implement or Trailer using an Autonomous Wireless Sensor Network System 350
A study on HfO2 RRAM in HRS based on I–V and RTN analysis 350
Charge transport in high-k stacks for charge-trapping memory applications: A modeling perspective (invited) 349
Mixed-Mode Stress in Silicon-Germanium Heterostructure Bipolar Transistors: Insights from Experiments and Simulations 349
Charge Transport and Degradation in HfO2 and HfOx Dielectrics 348
Comprehensive physics-based RRAM compact model including the effect of variability and multi-level random telegraph noise 347
Physical modeling and characterization of thermo-acoustic loudspeakers made of silver nano-wire films 347
Guidelines for a Reliable Analysis of Random Telegraph Noise in Electronic Devices 347
Instability of HfO2 RRAM devices: Comparing RTN and cycling variability 343
Force Feedback in Steer-by-Wire Systems: Architecture and Experimental Results 341
Analysis of RTN and cycling variability in HfO2 RRAM devices in LRS 341
On the impact of channel compositional variations on total threshold voltage variability in nanoscale InGaAs MOSFETs 339
Combined variability/sensitivity analysis in III-V and silicon FETs for future technological nodes 338
Random telegraph noise in HfOx Resistive Random Access Memory: From physics to compact modeling 338
RTN analysis with FHMM as a tool for multi-trap characterization in HfOx RRAM 337
Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs 337
A Physics-Based Model of the Dielectric Breakdown in HfO2 for Statistical Reliability Prediction 335
Bipolar Resistive RAM Based on HfO2: Physics, Compact Modeling, and Variability Control 335
Progresses in Modeling HfOx RRAM Operations and Variability 334
Defect density evaluation in a high-k MOSFET gate stack combining experimental and modeling methods 334
A new compact Spice-like model of E2PROM Memory cells suitable for DC and transient simulations 332
Localized characterization of charge transport and random telegraph noise at the nanoscale in HfO2 films combining scanning tunneling microscopy and multi-scale simulations 332
Random Telegraph Noise in Resistive Random Access Memories: Compact Modeling and Advanced Circuit Design 332
Characterization and TCAD Modeling of Mixed-Mode Stress Induced by Impact Ionization in Scaled SiGe HBTs 332
An Ultra-Low Cost Triboelectric Flowmeter 331
A memory window expression to evaluate the endurance of ferroelectric FETs 330
Measurements and simulation of avalanche breakdown in advanced Si bipolar transistors 328
Force Impact Effect in Contact-Mode Triboelectric Energy Harvesters: Characterization and Modeling 328
Monitoring Stress-Induced Defects in HK/MG FinFETs Using Random Telegraph Noise 328
Study of RRAM-Based Binarized Neural Networks Inference Accelerators Using an RRAM Physics-Based Compact Model 326
On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon‐Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs 326
Random dopant fluctuation variability in scaled InGaAs dual-gate ultra-thin body MOSFETs: source and drain doping effect 324
A New Compact Model of Floating Gate Non-Volatile Memory Cells 322
Circuit Reliability Analysis of RRAM-based Logic-in-Memory Crossbar Architectures Including Line Parasitic Effects, Variability, and Random Telegraph Noise 322
Solar harvesting per reti di sensori wireless 321
Single vacancy defect spectroscopy on HfO2 using random telegraph noise signals from scanning tunneling microscopy 321
Variability and sensitivity to process parameters variations in InGaAs Dual-Gate Ultra-Thin Body MOSFETS: A scaling perspective 321
A Hybrid CMOS-Memristor Spiking Neural Network Supporting Multiple Learning Rules 320
A complete radiation reliability software simulator 320
Ultra low cost triboelectric energy harvesting solutions for embedded sensor systems 320
Analysis of interface-trap effects in inversion-type InGaAs/ZrO2 MOSFETs 320
Random Telegraph Noise analysis to investigate the properties of active traps of HfO2-Based RRAM in HRS 318
A complete model of (EPROM)-P-2 memory cells for circuit simulations 318
Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs 318
Low-Bit Precision Neural Network Architecture with High Immunity to Variability and Random Telegraph Noise based on Resistive Memories 318
RTS Noise Characterization of HfOx RRAM in High Resistive State 317
An Empirical Model for RRAM Resistance in Low- and High-Resistance State 317
On the RESET-SET transition in Phase Change Memories 316
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 310
Extracting Atomic Defect Properties From Leakage Current Temperature Dependence 310
Energy-efficient logic-in-memory I-bit full adder enabled by a physics-based RRAM compact model 309
Operations, Charge Transport, and Random Telegraph Noise in HfOx Resistive Random Access Memory: a Multi-scale Modeling Study 308
Perimeter and area current components in HfO2 and HfO2-x metal-insulator-metal capacitors 308
Totale 37.617
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Categoria #
all - tutte 292.078
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 292.078
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20224.136 0 0 0 265 135 673 212 279 549 459 1.105 459
2022/20235.324 537 619 291 475 674 852 137 538 640 67 301 193
2023/20243.874 190 202 222 393 900 383 301 419 81 187 143 453
2024/202514.405 978 215 207 912 2.110 1.966 1.018 861 1.312 614 2.327 1.885
2025/202622.367 1.814 1.207 1.732 1.922 3.032 2.295 2.612 979 2.272 1.919 1.532 1.051
2026/20276.735 910 1.690 2.180 1.955 0 0 0 0 0 0 0 0
Totale 80.295