A new statistical model of stress-induced leakage current (SILC) is implemented and used to predict data retention and program disturbs of state-of-the-art flash memories, and to correlate oxide characterization outputs (density, cross section, energy level of defects) to flash memory reliability. Physical mechanisms inducing the largest threshold voltage (VT) degradation are explained, and tunnel oxide scaling effects on flash reliability are predicted.

Statistical simulations to inspect and predict data retention and program disturbs in Flash memories / Larcher, Luca; Pavan, Paolo. - STAMPA. - (2003), pp. 165-168. ((Intervento presentato al convegno Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International tenutosi a Washington DC (USA) nel 7-10 December 2003.

Statistical simulations to inspect and predict data retention and program disturbs in Flash memories

LARCHER, Luca;PAVAN, Paolo
2003

Abstract

A new statistical model of stress-induced leakage current (SILC) is implemented and used to predict data retention and program disturbs of state-of-the-art flash memories, and to correlate oxide characterization outputs (density, cross section, energy level of defects) to flash memory reliability. Physical mechanisms inducing the largest threshold voltage (VT) degradation are explained, and tunnel oxide scaling effects on flash reliability are predicted.
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Washington DC (USA)
7-10 December 2003
165
168
Larcher, Luca; Pavan, Paolo
Statistical simulations to inspect and predict data retention and program disturbs in Flash memories / Larcher, Luca; Pavan, Paolo. - STAMPA. - (2003), pp. 165-168. ((Intervento presentato al convegno Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International tenutosi a Washington DC (USA) nel 7-10 December 2003.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/308065
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