This paper presents a new technique to analyze the characteristics of multi-level random telegraph noise (RTN) in HfOX RRAM. RTN is characterized by abrupt switching of either the current or the voltage between discrete values as a result of trapping/de-trapping activity while reading the RRAM cell. RTN statistical properties are deduced exploiting a factorial hidden Markov model (FHMM). The proposed method considers the measured multi-level RTN as a superposition of many two-levels RTN, each represented by a Markov chain and associated to a single trap, and it is used to retrieve the statistical properties of each chain. These properties (i.e. dwell times and amplitude) are directly related to physical properties of each trap.

RTN analysis with FHMM as a tool for multi-trap characterization in HfOx RRAM / PUGLISI, Francesco Maria; PAVAN, Paolo. - STAMPA. - (2013), pp. 1-2. ((Intervento presentato al convegno 2013 IEEE International Conference of Electron Devices and Solid-State Circuits tenutosi a Hong Kong nel June, 3-5, 2013 [10.1109/EDSSC.2013.6628059].

RTN analysis with FHMM as a tool for multi-trap characterization in HfOx RRAM

PUGLISI, Francesco Maria;PAVAN, Paolo
2013

Abstract

This paper presents a new technique to analyze the characteristics of multi-level random telegraph noise (RTN) in HfOX RRAM. RTN is characterized by abrupt switching of either the current or the voltage between discrete values as a result of trapping/de-trapping activity while reading the RRAM cell. RTN statistical properties are deduced exploiting a factorial hidden Markov model (FHMM). The proposed method considers the measured multi-level RTN as a superposition of many two-levels RTN, each represented by a Markov chain and associated to a single trap, and it is used to retrieve the statistical properties of each chain. These properties (i.e. dwell times and amplitude) are directly related to physical properties of each trap.
2013 IEEE International Conference of Electron Devices and Solid-State Circuits
Hong Kong
June, 3-5, 2013
1
2
PUGLISI, Francesco Maria; PAVAN, Paolo
RTN analysis with FHMM as a tool for multi-trap characterization in HfOx RRAM / PUGLISI, Francesco Maria; PAVAN, Paolo. - STAMPA. - (2013), pp. 1-2. ((Intervento presentato al convegno 2013 IEEE International Conference of Electron Devices and Solid-State Circuits tenutosi a Hong Kong nel June, 3-5, 2013 [10.1109/EDSSC.2013.6628059].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/980506
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