In this letter we report about the impact of temperature on the reset process in HfO2 RRAM devices. I-V analysis of the device during consecutive switching cycles in different operating conditions and temperatures is performed. A compact model is exploited to extrapolate the properties of the conductive filament after the reset operation. The different temperature dependences of the reset process and the charge transport in High Resistive State are taken into account: by extracting the effective activation energy of the charge transport in High Resistive State, we are able to estimate the effect of temperature on the reset process. A linear relation is found between barrier thickness and reset temperature. High temperature switching may improve cycling variability at ultra- low reset voltage.