This paper presents a new compact model of Floating Gate Non-Volatile Memory Cells using SPICE circuit elements. It features many advantages compared to previous models: it is simple and easy to implement, scalable, and its computational time is not critical, thus making it very attractive to industry. It is based on a new procedure that improves the floating gate voltage estimate. The parameter extraction procedure is the same of a MOS transistor.

A New Compact Model of Floating Gate Non-Volatile Memory Cells / Larcher, Luca; Pavan, Paolo; F., Gattel; L., Albani; A., Marmiroli. - STAMPA. - (2001), pp. 56-59. ((Intervento presentato al convegno Technical Proceedings of Fourth International Conference on Modeling and Simulation of Microsystems tenutosi a Hilton Head Island (SC, USA) nel 19/21 March 2001.

A New Compact Model of Floating Gate Non-Volatile Memory Cells

LARCHER, Luca;PAVAN, Paolo;
2001-01-01

Abstract

This paper presents a new compact model of Floating Gate Non-Volatile Memory Cells using SPICE circuit elements. It features many advantages compared to previous models: it is simple and easy to implement, scalable, and its computational time is not critical, thus making it very attractive to industry. It is based on a new procedure that improves the floating gate voltage estimate. The parameter extraction procedure is the same of a MOS transistor.
Technical Proceedings of Fourth International Conference on Modeling and Simulation of Microsystems
Hilton Head Island (SC, USA)
19/21 March 2001
56
59
Larcher, Luca; Pavan, Paolo; F., Gattel; L., Albani; A., Marmiroli
A New Compact Model of Floating Gate Non-Volatile Memory Cells / Larcher, Luca; Pavan, Paolo; F., Gattel; L., Albani; A., Marmiroli. - STAMPA. - (2001), pp. 56-59. ((Intervento presentato al convegno Technical Proceedings of Fourth International Conference on Modeling and Simulation of Microsystems tenutosi a Hilton Head Island (SC, USA) nel 19/21 March 2001.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/308072
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