This paper tackles the difficult task to extract MOS parameters by a new model of the gate capacitance that takes into account both poly-Si depletion and charge quantization and includes temperature effects. A new fast and iterative procedure, based on this simplified self-consistent model, will be presented to estimate simultaneously the main MOS system parameters (oxide thickness, substrate, and poly-Si doping) and oxide held, surface potentials at the Si/SiO2 and at the poly-Si/SiO2 interfaces. Its effectiveness will be demonstrated by comparing oxide field and oxide thickness to those extracted by other methods proposed in the literature. Moreover, these methods are critically reviewed and we suggest improvements to reduce their errors, The agreement between CV simulation and experimental data is good without the need of any free parameter to improve the fitting quality for several gate and substrate materials combinations. Finally, a simple law to estimate substrate and poly-Si doping in n+/n+ MOS capacitor from CV curves is proposed.

A new model of gate capacitance as a simple tool to extract MOS parameters / Larcher, Luca; Pavan, Paolo; F., Pellizzer; G., Ghidini. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - STAMPA. - 48:(2001), pp. 935-945.

A new model of gate capacitance as a simple tool to extract MOS parameters

LARCHER, Luca;PAVAN, Paolo;
2001-01-01

Abstract

This paper tackles the difficult task to extract MOS parameters by a new model of the gate capacitance that takes into account both poly-Si depletion and charge quantization and includes temperature effects. A new fast and iterative procedure, based on this simplified self-consistent model, will be presented to estimate simultaneously the main MOS system parameters (oxide thickness, substrate, and poly-Si doping) and oxide held, surface potentials at the Si/SiO2 and at the poly-Si/SiO2 interfaces. Its effectiveness will be demonstrated by comparing oxide field and oxide thickness to those extracted by other methods proposed in the literature. Moreover, these methods are critically reviewed and we suggest improvements to reduce their errors, The agreement between CV simulation and experimental data is good without the need of any free parameter to improve the fitting quality for several gate and substrate materials combinations. Finally, a simple law to estimate substrate and poly-Si doping in n+/n+ MOS capacitor from CV curves is proposed.
48
935
945
A new model of gate capacitance as a simple tool to extract MOS parameters / Larcher, Luca; Pavan, Paolo; F., Pellizzer; G., Ghidini. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - STAMPA. - 48:(2001), pp. 935-945.
Larcher, Luca; Pavan, Paolo; F., Pellizzer; G., Ghidini
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

Caricamento pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/306048
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 32
  • ???jsp.display-item.citation.isi??? 26
social impact