The NROM concept is a 2 bit Flash cell based on charge storage in ONO dielectric. The cell is storing two physically separated bits with a unique method to sense the trapped charge. Programming is performed by channel hot electron injection (CHE) and erase by hot hole enhanced tunneling (HHET).For a new technology to challenge the 30 years old floating gate cells, the total solution from Cell, Array, Process, Product, and Testing has to be available. To actually "challenge" floating gate as the main Flash technology, a technology has to be in volume production. NROM technology is in initial production stage, hence we can only discuss future potential to become a true challenge to the floating gate storage concept.In this presentation, we will introduce the NROM technology. The NROM technology is compared to the Flaoting Gate Flash
Can NROM, a 2 Bit, Trapping Storage NVM Cell, Give a Real Challenge to Floating Gate Cells? / Eitan, B.; Pavan, Paolo; Bloom, I.; Aloni, E.; Frommer, A.. - STAMPA. - C-11-1:(1999), pp. 522-524. (Intervento presentato al convegno SOLID STATE AND DEVICE MATERIALS tenutosi a Tokio, Japan nel Sept. 99).