PUGLISI, Francesco Maria
 Distribuzione geografica
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Continente #
NA - Nord America 10.706
EU - Europa 4.396
AS - Asia 1.220
SA - Sud America 18
OC - Oceania 10
Continente sconosciuto - Info sul continente non disponibili 8
AF - Africa 6
Totale 16.364
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Nazione #
US - Stati Uniti d'America 10.680
GB - Regno Unito 1.150
IT - Italia 1.097
SE - Svezia 618
DE - Germania 502
CN - Cina 435
HK - Hong Kong 346
FR - Francia 266
TR - Turchia 152
IE - Irlanda 148
FI - Finlandia 144
UA - Ucraina 142
BG - Bulgaria 101
KR - Corea 72
PT - Portogallo 60
IN - India 57
SG - Singapore 45
BE - Belgio 42
TW - Taiwan 40
NL - Olanda 26
CA - Canada 25
CH - Svizzera 23
JP - Giappone 18
AT - Austria 15
BR - Brasile 14
RU - Federazione Russa 12
ES - Italia 11
GR - Grecia 11
PK - Pakistan 10
VN - Vietnam 8
AE - Emirati Arabi Uniti 7
AU - Australia 6
BD - Bangladesh 6
EU - Europa 6
PH - Filippine 6
RO - Romania 6
IR - Iran 4
LU - Lussemburgo 4
NZ - Nuova Zelanda 4
CZ - Repubblica Ceca 3
DK - Danimarca 3
DZ - Algeria 3
IQ - Iraq 3
MY - Malesia 3
A2 - ???statistics.table.value.countryCode.A2??? 2
CL - Cile 2
EE - Estonia 2
HU - Ungheria 2
NO - Norvegia 2
RS - Serbia 2
SA - Arabia Saudita 2
TN - Tunisia 2
AM - Armenia 1
EC - Ecuador 1
HR - Croazia 1
ID - Indonesia 1
IL - Israele 1
LA - Repubblica Popolare Democratica del Laos 1
LB - Libano 1
LK - Sri Lanka 1
MA - Marocco 1
MD - Moldavia 1
MK - Macedonia 1
MX - Messico 1
PE - Perù 1
SI - Slovenia 1
Totale 16.364
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Città #
Fairfield 1.799
Houston 1.033
Ashburn 961
Woodbridge 925
Chandler 912
Southend 875
Seattle 687
Cambridge 578
Wilmington 574
Ann Arbor 421
Nyköping 418
Hong Kong 328
Modena 292
Jacksonville 269
Dearborn 251
San Diego 178
Beijing 170
Leesburg 133
Dublin 128
London 114
Izmir 110
Princeton 109
Bremen 104
Grafing 103
Helsinki 103
Sofia 101
Milan 97
Redwood City 84
Eugene 76
Chicago 61
New York 59
Bologna 42
Los Angeles 34
Palaiseau 30
Guangzhou 28
Rome 28
Boardman 25
Falls Church 22
Norwalk 20
Parma 20
Zhengzhou 20
Aachen 19
Hefei 19
San Jose 19
Shanghai 17
Taipei 17
Leuven 16
Brussels 14
Des Moines 14
Ottawa 14
Reggio Emilia 14
Chiswick 13
Vienna 13
Dallas 12
Frankfurt am Main 12
Kilburn 12
Nanjing 12
Singapore 12
Bomporto 11
Seoul 11
Suzhou 11
Verona 11
Hounslow 10
Padova 10
Rende 10
San Francisco 10
Gelsenkirchen 9
Ravenna 9
Rimini 9
Cesena 8
Cork 8
Delhi 8
Florence 8
Gif-sur-yvette 8
Pavia 8
Prescot 8
Segrate 8
São Paulo 8
Toronto 8
Wuhan 8
Xian 8
Central 7
Dong Ket 7
Edinburgh 7
Fuzhou 7
Indiana 7
Islington 7
Kunming 7
Lucknow 7
Novellara 7
Paris 7
Reggio Nell'emilia 7
San Mateo 7
Ancona 6
Bathinda 6
Chennai 6
Cremona 6
Durham 6
Frankfurt (Oder) 6
Jinan 6
Totale 12.904
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Nome #
Advanced Data Encryption ​using 2D Materials 522
Unimore Resistive Random Access Memory (RRAM) Verilog-A Model 1.0.0 307
The Role of Carbon Doping on Breakdown, Current Collapse and Dynamic On-Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates 290
Recommended Methods to Study Resistive Switching Devices 261
Coexistence of Grain‐Boundaries‐Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride 257
A Complete Statistical Investigation of RTN in HfO₂-Based RRAM in High Resistive State 252
The impact of interface and border traps on current–voltage, capacitance–voltage, and split‐CV mobility measurements in InGaAs MOSFETs 247
Anomalous random telegraph noise and temporary phenomena in resistive random access memory 240
Threshold Voltage Statistical Variability and Its Sensitivity to Critical Geometrical Parameters in Ultrascaled InGaAs and Silicon FETs 238
Understanding current instabilities in conductive atomic force microscopy 228
Temperature impact on the reset operation in HfO2 RRAM 224
Mixed-Mode Stress in Silicon-Germanium Heterostructure Bipolar Transistors: Insights from Experiments and Simulations 221
A new verilog-A compact model of random telegraph noise in oxide-based RRAM for advanced circuit design 210
Effects of Border Traps on Transfer Curve Hysteresis and Split-CV Mobility Measurement in InGaAs Quantum-Well MOSFETs 202
A microscopic physical description of RTN current fluctuations in HfOx RRAM 199
A Compact Model of Hafnium-Oxide-Based Resistive Random Access Memory 198
Progresses in Modeling HfOx RRAM Operations and Variability 198
Random telegraph noise in HfOx Resistive Random Access Memory: From physics to compact modeling 196
A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis 195
Random telegraph noise: Measurement, data analysis, and interpretation 195
A Novel Program-Verify Algorithm for Multi-Bit Operation in HfO2 RRAM 195
Random Telegraph Noise in Resistive Random Access Memories: Compact Modeling and Advanced Circuit Design 194
Statistical analysis of random telegraph noise in HfO2-based RRAM devices in LRS 192
On the impact of channel compositional variations on total threshold voltage variability in nanoscale InGaAs MOSFETs 187
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 185
Perimeter and area current components in HfO2 and HfO2-x metal-insulator-metal capacitors 183
Random Telegraph Noise analysis to investigate the properties of active traps of HfO2-Based RRAM in HRS 180
Single vacancy defect spectroscopy on HfO2 using random telegraph noise signals from scanning tunneling microscopy 180
RTN analysis with FHMM as a tool for multi-trap characterization in HfOx RRAM 179
Localized characterization of charge transport and random telegraph noise at the nanoscale in HfO2 films combining scanning tunneling microscopy and multi-scale simulations 177
Smart Logic-in-Memory Architecture for Low-Power non-von Neumann Computing 177
Random dopant fluctuation variability in scaled InGaAs dual-gate ultra-thin body MOSFETs: source and drain doping effect 175
Probing defects generation during stress in high-κ/metal gate FinFETs by random telegraph noise characterization 174
RTS Noise Characterization of HfOx RRAM in High Resistive State 173
Bipolar Resistive RAM Based on HfO2: Physics, Compact Modeling, and Variability Control 173
A multi-scale methodology connecting device physics to compact models and circuit applications for OxRAM technology 173
Characterization and TCAD Modeling of Mixed-Mode Stress Induced by Impact Ionization in Scaled SiGe HBTs 173
Defect density evaluation in a high-k MOSFET gate stack combining experimental and modeling methods 170
A study on HfO2 RRAM in HRS based on I–V and RTN analysis 169
Variability and sensitivity to process parameters variations in InGaAs Dual-Gate Ultra-Thin Body MOSFETS: A scaling perspective 169
Operations, Charge Transport, and Random Telegraph Noise in HfOx Resistive Random Access Memory: a Multi-scale Modeling Study 168
2D h-BN based RRAM devices 168
Characterization of anomalous Random Telegraph Noise in Resistive Random Access Memory 167
Scaling perspective and reliability of conductive filament formation in ultra-scaled HfO2 Resistive Random Access Memory 167
Combined variability/sensitivity analysis in III-V and silicon FETs for future technological nodes 167
A consistent picture of cycling dispersion of resistive states in HfOx resistive random access memory 165
Monitoring Stress-Induced Defects in HK/MG FinFETs Using Random Telegraph Noise 165
“Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs 165
Guidelines for a Reliable Analysis of Random Telegraph Noise in Electronic Devices 163
Insights into the off-state breakdown mechanisms in power GaN HEMTs 160
Multiscale modeling of defect-related phenomena in high-k based logic and memory devices 159
Multiscale modeling of electron-ion interactions for engineering novel electronic devices and materials 159
Extracting Atomic Defect Properties From Leakage Current Temperature Dependence 159
Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-Of-The-Roadmap III-V MOSFETs 159
Instability of HfO2 RRAM devices: Comparing RTN and cycling variability 153
Effects of mole fraction variations and scaling on total variability in InGaAs MOSFETs 153
Biologically Plausible Information Propagation in a CMOS Integrate-and-Fire Artificial Neuron Circuit with Memristive Synapses 152
Energy-efficient logic-in-memory I-bit full adder enabled by a physics-based RRAM compact model 152
Analysis of RTN and cycling variability in HfO2 RRAM devices in LRS 147
Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs 146
Electroforming in Metal-Oxide Memristive Synapses 144
An investigation on the role of current compliance in HfO2-based RRAM in HRS using RTN and I-V data 143
Circuit reliability of low-power rram-based logic-in-memory architectures 139
Coexistence of volatile and non-volatile resistive switching in 2D h-BN based electronic synapses 138
Random telegraph noise in 2D hexagonal boron nitride dielectric films 136
Multiscale modeling for application-oriented optimization of resistive random-access memory 132
An Empirical Model for RRAM Resistance in Low- and High-Resistance State 129
Random Telegraph Signal Noise Properties of HfOx RRAM in High Resistive States 126
Self-Heating Effect in Silicon-Germanium Heterostructure Bipolar Transistors in Stress and Operating Conditions 126
SIMPLY: Design of a RRAM-Based Smart Logic-in-Memory Architecture using RRAM Compact Model 124
Circuit Reliability Analysis of RRAM-based Logic-in-Memory Crossbar Architectures Including Line Parasitic Effects, Variability, and Random Telegraph Noise 123
Circuit Reliability Analysis of In-Memory Inference in Binarized Neural Networks 122
Reliability-Aware Design Strategies for Stateful Logic-in-Memory Architectures 120
Measuring and analyzing Random Telegraph Noise in Nanoscale Devices: The case of resistive random access memories 118
Multiscale modeling of electron-ion interactions for engineering novel electronic device and materials 116
Advanced modeling and characterization techniques for innovative memory devices: The RRAM case 116
The effects of carbon on the bidirectional threshold voltage instabilities induced by negative gate bias stress in GaN MIS-HEMTs 116
Random Telegraph Noise analysis as a tool to link physical device features to electrical reliability in nanoscale devices 113
Factorial Hidden Markov Model analysis of Random Telegraph Noise in Resistive Random Access Memories 111
Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs 109
On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon‐Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs 108
Boron Vacancies Causing Breakdown in 2D Layered Hexagonal Boron Nitride Dielectrics 103
Reconfigurable Smart In-Memory Computing Platform Supporting Logic and Binarized Neural Networks for Low-Power Edge Devices 103
Reliability of Logic-in-Memory Circuits in Resistive Memory Arrays 101
Noise in resistive random access memory devices 100
Smart Logic-in-Memory Architecture For Ultra-Low Power Large Fan-In Operations 99
Chemical vapor deposition of hexagonal boron nitride on metal-coated wafers and transfer-free fabrication of resistive switching devices 89
Emergence of associative learning in a neuromorphic inference network 87
Modeling Nanoscale III–V Channel MOSFETs with the Self-Consistent Multi-Valley/Multi-Subband Monte Carlo Approach 82
Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges 81
Understanding the Reliability of Ferroelectric Tunnel Junction Operations using an Advanced Small-Signal Model 79
STT-MTJ Based Smart Implication for Energy-Efficient Logic-in-Memory Computing 77
Low-Bit Precision Neural Network Architecture with High Immunity to Variability and Random Telegraph Noise based on Resistive Memories 77
FHMM analysis for Multi-Defect Spectroscopy in HfOX RRAM 76
IIRW 2019 Discussion Group II: Reliability for Aerospace Applications 76
METODO DI LETTURA PER CIRCUITI DEL TIPO LOGIC-IN-MEMORY E RELATIVA ARCHITETTURA CIRCUITALE 75
Reliability and Performance Analysis of Logic-in-Memory Based Binarized Neural Networks 72
Energy-efficient non-von neumann computing architecture supporting multiple computing paradigms for logic and binarized neural networks 71
Multi-Input Logic-in-Memory for Ultra-Low Power Non-Von Neumann Computing 68
Random Telegraph Noise in Metal-Oxide Memristors for True Random Number Generators: A Materials Study 62
Totale 15.839
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Categoria #
all - tutte 70.350
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 70.350
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/2019676 0 0 0 0 0 0 0 0 0 0 339 337
2019/20203.037 216 84 92 155 292 501 434 359 379 205 220 100
2020/20214.037 263 159 271 278 322 327 461 471 330 592 273 290
2021/20223.001 204 144 211 168 135 375 95 205 329 290 614 231
2022/20232.798 260 356 189 243 364 376 76 280 325 29 189 111
2023/20241.862 135 112 145 270 451 173 173 259 42 95 7 0
Totale 16.661