PUGLISI, Francesco Maria
 Distribuzione geografica
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Continente #
NA - Nord America 17.223
AS - Asia 10.295
EU - Europa 9.807
SA - Sud America 1.152
AF - Africa 173
OC - Oceania 15
Continente sconosciuto - Info sul continente non disponibili 11
Totale 38.676
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Nazione #
US - Stati Uniti d'America 16.955
SG - Singapore 3.134
CN - Cina 3.060
SE - Svezia 2.557
IT - Italia 1.976
GB - Regno Unito 1.555
HK - Hong Kong 1.302
BR - Brasile 889
DE - Germania 796
VN - Vietnam 780
PL - Polonia 689
KR - Corea 564
FR - Francia 472
FI - Finlandia 381
JP - Giappone 328
RU - Federazione Russa 327
IN - India 221
TR - Turchia 184
UA - Ucraina 182
IE - Irlanda 157
CA - Canada 145
NL - Olanda 138
ID - Indonesia 123
BG - Bulgaria 109
TW - Taiwan 98
BD - Bangladesh 95
ES - Italia 94
AR - Argentina 85
MX - Messico 81
PT - Portogallo 72
IQ - Iraq 63
BE - Belgio 58
AT - Austria 55
ZA - Sudafrica 51
AE - Emirati Arabi Uniti 46
PK - Pakistan 46
EC - Ecuador 45
PH - Filippine 40
CH - Svizzera 38
MA - Marocco 32
LT - Lituania 31
VE - Venezuela 30
IL - Israele 29
CO - Colombia 28
GR - Grecia 24
CL - Cile 23
MY - Malesia 23
SA - Arabia Saudita 21
PY - Paraguay 20
JO - Giordania 19
UZ - Uzbekistan 19
DZ - Algeria 18
TN - Tunisia 18
PE - Perù 17
TH - Thailandia 17
CZ - Repubblica Ceca 14
NP - Nepal 14
RO - Romania 14
DO - Repubblica Dominicana 11
AU - Australia 10
AZ - Azerbaigian 10
EG - Egitto 10
HU - Ungheria 10
IR - Iran 9
KE - Kenya 9
AL - Albania 8
ET - Etiopia 8
JM - Giamaica 8
UY - Uruguay 8
DK - Danimarca 7
RS - Serbia 7
EU - Europa 6
KZ - Kazakistan 6
LU - Lussemburgo 6
BY - Bielorussia 5
EE - Estonia 5
LB - Libano 5
NZ - Nuova Zelanda 5
SK - Slovacchia (Repubblica Slovacca) 5
SN - Senegal 5
AO - Angola 4
BO - Bolivia 4
CR - Costa Rica 4
GE - Georgia 4
MD - Moldavia 4
MN - Mongolia 4
NI - Nicaragua 4
OM - Oman 4
PS - Palestinian Territory 4
AM - Armenia 3
BN - Brunei Darussalam 3
CG - Congo 3
GY - Guiana 3
HN - Honduras 3
KW - Kuwait 3
PA - Panama 3
TT - Trinidad e Tobago 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AF - Afghanistan, Repubblica islamica di 2
CI - Costa d'Avorio 2
Totale 38.631
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Città #
Singapore 2.061
Fairfield 1.799
Stockholm 1.795
Ashburn 1.716
Santa Clara 1.598
Hong Kong 1.255
Houston 1.056
Hefei 1.030
Woodbridge 925
Chandler 912
Southend 875
San Jose 761
Seattle 702
Warsaw 682
Wilmington 584
Cambridge 581
Beijing 479
Chicago 434
Ann Arbor 421
Nyköping 418
London 416
Modena 377
Seoul 359
Helsinki 309
Tokyo 279
Jacksonville 270
Ho Chi Minh City 256
Los Angeles 256
Dearborn 251
The Dalles 248
Milan 214
Hanoi 183
San Diego 179
Council Bluffs 166
New York 162
Buffalo 146
Dublin 137
Leesburg 133
Bologna 125
Boardman 115
São Paulo 114
Izmir 113
Princeton 109
Dallas 108
Bremen 104
Sofia 104
Grafing 103
Lauterbourg 102
Moscow 98
Frankfurt am Main 92
East Aurora 90
Redwood City 84
Shanghai 82
Jakarta 81
Eugene 76
Columbus 68
Rome 67
Orem 60
Salt Lake City 60
Reggio Emilia 59
Munich 58
Guangzhou 53
Falkenstein 50
Chennai 46
Taipei 44
Wuhan 40
Da Nang 39
Amsterdam 37
Kent 37
San Francisco 37
Mantova 35
Atlanta 34
Shenzhen 34
Toronto 34
Delfgauw 33
Johannesburg 33
Brooklyn 32
Mexico City 32
Hangzhou 31
Nuremberg 30
Palaiseau 30
Vienna 29
Zhengzhou 29
Paris 28
Parma 28
Des Moines 27
Dresden 27
Redondo Beach 27
Brussels 26
Haiphong 26
Poplar 26
Rio de Janeiro 26
Baghdad 25
Phoenix 24
Tampa 24
Denver 23
Elk Grove Village 22
Falls Church 22
Montreal 22
Brasília 21
Totale 27.720
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Nome #
2D h-BN based RRAM devices 2.159
A Complete Statistical Investigation of RTN in HfO₂-Based RRAM in High Resistive State 751
Advanced Data Encryption ​using 2D Materials 705
A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis 686
Unimore Resistive Random Access Memory (RRAM) Verilog-A Model 1.0.0 677
Memristive technologies for data storage, computation, encryption, and radio-frequency communication 512
Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges 475
Coexistence of Grain‐Boundaries‐Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride 450
Biologically Plausible Information Propagation in a CMOS Integrate-and-Fire Artificial Neuron Circuit with Memristive Synapses 410
The Role of Carbon Doping on Breakdown, Current Collapse and Dynamic On-Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates 398
A new verilog-A compact model of random telegraph noise in oxide-based RRAM for advanced circuit design 390
Anomalous random telegraph noise and temporary phenomena in resistive random access memory 374
A microscopic physical description of RTN current fluctuations in HfOx RRAM 374
Random telegraph noise: Measurement, data analysis, and interpretation 368
Recommended Methods to Study Resistive Switching Devices 368
A Compact Model of Hafnium-Oxide-Based Resistive Random Access Memory 366
Threshold Voltage Statistical Variability and Its Sensitivity to Critical Geometrical Parameters in Ultrascaled InGaAs and Silicon FETs 357
The impact of interface and border traps on current–voltage, capacitance–voltage, and split‐CV mobility measurements in InGaAs MOSFETs 352
Characterization of anomalous Random Telegraph Noise in Resistive Random Access Memory 347
Effects of Border Traps on Transfer Curve Hysteresis and Split-CV Mobility Measurement in InGaAs Quantum-Well MOSFETs 346
Understanding current instabilities in conductive atomic force microscopy 334
Temperature impact on the reset operation in HfO2 RRAM 331
A multi-scale methodology connecting device physics to compact models and circuit applications for OxRAM technology 330
A Novel Program-Verify Algorithm for Multi-Bit Operation in HfO2 RRAM 330
A consistent picture of cycling dispersion of resistive states in HfOx resistive random access memory 326
Combined variability/sensitivity analysis in III-V and silicon FETs for future technological nodes 321
A study on HfO2 RRAM in HRS based on I–V and RTN analysis 317
On the impact of channel compositional variations on total threshold voltage variability in nanoscale InGaAs MOSFETs 316
Mixed-Mode Stress in Silicon-Germanium Heterostructure Bipolar Transistors: Insights from Experiments and Simulations 313
Progresses in Modeling HfOx RRAM Operations and Variability 312
Guidelines for a Reliable Analysis of Random Telegraph Noise in Electronic Devices 311
Random telegraph noise in HfOx Resistive Random Access Memory: From physics to compact modeling 310
“Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs 310
RTN analysis with FHMM as a tool for multi-trap characterization in HfOx RRAM 309
Bipolar Resistive RAM Based on HfO2: Physics, Compact Modeling, and Variability Control 298
Random dopant fluctuation variability in scaled InGaAs dual-gate ultra-thin body MOSFETs: source and drain doping effect 298
Defect density evaluation in a high-k MOSFET gate stack combining experimental and modeling methods 298
Localized characterization of charge transport and random telegraph noise at the nanoscale in HfO2 films combining scanning tunneling microscopy and multi-scale simulations 295
Random Telegraph Noise in Resistive Random Access Memories: Compact Modeling and Advanced Circuit Design 294
Variability and sensitivity to process parameters variations in InGaAs Dual-Gate Ultra-Thin Body MOSFETS: A scaling perspective 293
Monitoring Stress-Induced Defects in HK/MG FinFETs Using Random Telegraph Noise 292
RTS Noise Characterization of HfOx RRAM in High Resistive State 291
Circuit Reliability Analysis of RRAM-based Logic-in-Memory Crossbar Architectures Including Line Parasitic Effects, Variability, and Random Telegraph Noise 289
Characterization and TCAD Modeling of Mixed-Mode Stress Induced by Impact Ionization in Scaled SiGe HBTs 288
An Empirical Model for RRAM Resistance in Low- and High-Resistance State 288
A Hybrid CMOS-Memristor Spiking Neural Network Supporting Multiple Learning Rules 287
Random Telegraph Noise analysis to investigate the properties of active traps of HfO2-Based RRAM in HRS 287
Analysis of RTN and cycling variability in HfO2 RRAM devices in LRS 285
Statistical analysis of random telegraph noise in HfO2-based RRAM devices in LRS 283
Energy-efficient logic-in-memory I-bit full adder enabled by a physics-based RRAM compact model 283
Circuit reliability of low-power rram-based logic-in-memory architectures 282
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 281
An investigation on the role of current compliance in HfO2-based RRAM in HRS using RTN and I-V data 281
Study of RRAM-Based Binarized Neural Networks Inference Accelerators Using an RRAM Physics-Based Compact Model 278
Probing defects generation during stress in high-κ/metal gate FinFETs by random telegraph noise characterization 277
Low-Bit Precision Neural Network Architecture with High Immunity to Variability and Random Telegraph Noise based on Resistive Memories 277
Single vacancy defect spectroscopy on HfO2 using random telegraph noise signals from scanning tunneling microscopy 276
Comprehensive physics-based RRAM compact model including the effect of variability and multi-level random telegraph noise 275
Scaling perspective and reliability of conductive filament formation in ultra-scaled HfO2 Resistive Random Access Memory 271
Extracting Atomic Defect Properties From Leakage Current Temperature Dependence 271
Perimeter and area current components in HfO2 and HfO2-x metal-insulator-metal capacitors 269
Effects of mole fraction variations and scaling on total variability in InGaAs MOSFETs 269
Circuit Reliability Analysis of In-Memory Inference in Binarized Neural Networks 269
Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs 269
On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon‐Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs 269
Operations, Charge Transport, and Random Telegraph Noise in HfOx Resistive Random Access Memory: a Multi-scale Modeling Study 266
Multiscale modeling for application-oriented optimization of resistive random-access memory 266
Factorial Hidden Markov Model analysis of Random Telegraph Noise in Resistive Random Access Memories 263
Instability of HfO2 RRAM devices: Comparing RTN and cycling variability 262
Reconfigurable Smart In-Memory Computing Platform Supporting Logic and Binarized Neural Networks for Low-Power Edge Devices 262
Multiscale modeling of electron-ion interactions for engineering novel electronic devices and materials 258
Multiscale modeling of defect-related phenomena in high-k based logic and memory devices 257
Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-Of-The-Roadmap III-V MOSFETs 255
Insights into the off-state breakdown mechanisms in power GaN HEMTs 252
Smart Logic-in-Memory Architecture for Low-Power non-von Neumann Computing 252
Advanced modeling and characterization techniques for innovative memory devices: The RRAM case 248
The effects of carbon on the bidirectional threshold voltage instabilities induced by negative gate bias stress in GaN MIS-HEMTs 247
Coexistence of volatile and non-volatile resistive switching in 2D h-BN based electronic synapses 243
Random Telegraph Signal Noise Properties of HfOx RRAM in High Resistive States 240
Editorial: Brain-inspired computing: Neuroscience drives the development of new electronics and artificial intelligence 237
Guidelines for the Design of Random Telegraph Noise-Based True Random Number Generators 237
Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs 232
SIMPLY: Design of a RRAM-Based Smart Logic-in-Memory Architecture using RRAM Compact Model 229
Multiscale modeling of electron-ion interactions for engineering novel electronic device and materials 227
Emergence of associative learning in a neuromorphic inference network 225
Self-Heating Effect in Silicon-Germanium Heterostructure Bipolar Transistors in Stress and Operating Conditions 222
Electroforming in Metal-Oxide Memristive Synapses 220
Random telegraph noise in 2D hexagonal boron nitride dielectric films 219
Optimized Synthesis Method for Ultra-Low Power Multi-Input Material Implication Logic With Emerging Non-Volatile Memories 219
Random Telegraph Noise in Metal-Oxide Memristors for True Random Number Generators: A Materials Study 213
Smart Logic-in-Memory Architecture For Ultra-Low Power Large Fan-In Operations 211
Energy-efficient non-von neumann computing architecture supporting multiple computing paradigms for logic and binarized neural networks 211
Measuring and analyzing Random Telegraph Noise in Nanoscale Devices: The case of resistive random access memories 207
Reliability of Logic-in-Memory Circuits in Resistive Memory Arrays 204
Random Telegraph Noise analysis as a tool to link physical device features to electrical reliability in nanoscale devices 201
METODO DI LETTURA PER CIRCUITI DEL TIPO LOGIC-IN-MEMORY E RELATIVA ARCHITETTURA CIRCUITALE 200
Understanding the Reliability of Ferroelectric Tunnel Junction Operations using an Advanced Small-Signal Model 198
Combining Experiments and a Novel Small Signal Model to Investigate the Degradation Mechanisms in Ferroelectric Tunnel Junctions 196
Impedance Investigation of MIFM Ferroelectric Tunnel Junction using a Comprehensive Small-Signal Model 195
From Accelerated to Operating Conditions: How Trapped Charge Impacts on TDDB in SiO2 and HfO2 Stacks 194
Totale 32.166
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Categoria #
all - tutte 136.740
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 136.740
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021563 0 0 0 0 0 0 0 0 0 0 273 290
2021/20223.001 204 144 211 168 135 375 95 205 329 290 614 231
2022/20232.798 260 356 189 243 364 376 76 280 325 29 189 111
2023/20242.236 135 112 145 270 451 173 173 259 42 95 96 285
2024/20257.585 437 140 197 482 1.097 1.125 555 462 665 452 1.057 916
2025/202614.412 998 764 956 1.282 1.883 1.765 1.516 611 3.197 1.235 205 0
Totale 39.032