PUGLISI, Francesco Maria
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
NA - Nord America 19.654
AS - Asia 10.847
EU - Europa 10.166
SA - Sud America 1.171
Continente sconosciuto - Info sul continente non disponibili 369
AF - Africa 176
OC - Oceania 15
Totale 42.398
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 19.271
SG - Singapore 3.191
CN - Cina 3.124
SE - Svezia 2.557
IT - Italia 2.293
GB - Regno Unito 1.557
HK - Hong Kong 1.318
BR - Brasile 896
DE - Germania 815
VN - Vietnam 788
PL - Polonia 691
KR - Corea 579
FR - Francia 479
BD - Bangladesh 449
FI - Finlandia 381
JP - Giappone 338
RU - Federazione Russa 328
IN - India 225
CA - Canada 210
TR - Turchia 186
UA - Ucraina 182
IE - Irlanda 157
NL - Olanda 141
ID - Indonesia 129
BG - Bulgaria 109
TW - Taiwan 102
ES - Italia 94
AR - Argentina 88
MX - Messico 86
PT - Portogallo 72
IQ - Iraq 63
BE - Belgio 61
AT - Austria 56
ZA - Sudafrica 52
AE - Emirati Arabi Uniti 48
EC - Ecuador 47
PK - Pakistan 47
PH - Filippine 41
CH - Svizzera 39
MA - Marocco 34
VE - Venezuela 33
LT - Lituania 32
CO - Colombia 30
IL - Israele 29
MY - Malesia 28
CL - Cile 24
GR - Grecia 24
SA - Arabia Saudita 21
PY - Paraguay 20
JM - Giamaica 19
JO - Giordania 19
UZ - Uzbekistan 19
DZ - Algeria 18
PE - Perù 18
TN - Tunisia 18
TH - Thailandia 17
NP - Nepal 16
RO - Romania 15
CR - Costa Rica 14
CZ - Repubblica Ceca 14
DO - Repubblica Dominicana 11
AU - Australia 10
AZ - Azerbaigian 10
EG - Egitto 10
HU - Ungheria 10
IR - Iran 9
KE - Kenya 9
AL - Albania 8
ET - Etiopia 8
UY - Uruguay 8
DK - Danimarca 7
NI - Nicaragua 7
RS - Serbia 7
EU - Europa 6
GT - Guatemala 6
HN - Honduras 6
KZ - Kazakistan 6
LU - Lussemburgo 6
TT - Trinidad e Tobago 6
BY - Bielorussia 5
EE - Estonia 5
LB - Libano 5
NZ - Nuova Zelanda 5
SK - Slovacchia (Repubblica Slovacca) 5
SN - Senegal 5
AO - Angola 4
BO - Bolivia 4
GE - Georgia 4
MD - Moldavia 4
MN - Mongolia 4
OM - Oman 4
PA - Panama 4
PR - Porto Rico 4
PS - Palestinian Territory 4
AM - Armenia 3
BB - Barbados 3
BN - Brunei Darussalam 3
CG - Congo 3
GY - Guiana 3
KH - Cambogia 3
Totale 41.986
Salva come PNG Salva come JPEG
Città #
Ashburn 2.109
Singapore 2.092
Fairfield 1.800
Stockholm 1.795
Santa Clara 1.685
Hong Kong 1.270
San Jose 1.084
Houston 1.065
Hefei 1.030
Woodbridge 927
Chandler 912
Southend 875
Seattle 708
Warsaw 683
Wilmington 584
Cambridge 581
Beijing 493
Council Bluffs 483
Chicago 448
Ann Arbor 421
London 418
Nyköping 418
Modena 379
Seoul 361
Los Angeles 328
Helsinki 309
Tokyo 288
Jacksonville 277
Milan 270
Ho Chi Minh City 257
Dearborn 252
The Dalles 251
New York 229
Hanoi 184
San Diego 179
Buffalo 168
Bologna 137
Dublin 137
Boardman 135
Dallas 135
Leesburg 133
São Paulo 116
Izmir 113
Princeton 109
Bremen 104
Sofia 104
Columbus 103
Grafing 103
Lauterbourg 102
Moscow 98
Frankfurt am Main 94
Rome 92
East Aurora 90
Shanghai 86
Redwood City 84
Jakarta 81
Eugene 76
Orem 62
Reggio Emilia 61
Salt Lake City 61
Munich 58
Guangzhou 54
Falkenstein 50
Chennai 46
Toronto 46
Taipei 44
Atlanta 43
San Francisco 41
Wuhan 40
Amsterdam 39
Da Nang 39
Kent 37
Phoenix 37
Mantova 35
Mexico City 35
Brooklyn 34
Shenzhen 34
Delfgauw 33
Johannesburg 33
Hangzhou 31
Nuremberg 30
Palaiseau 30
Paris 30
Vienna 30
Brussels 29
Des Moines 29
Dhaka 29
Dresden 29
Zhengzhou 29
Haiphong 28
Montreal 28
Parma 28
Redondo Beach 27
Poplar 26
Rio de Janeiro 26
Baghdad 25
Draper 25
Washington 25
Charlotte 24
Tampa 24
Totale 29.389
Salva come PNG Salva come JPEG
Nome #
2D h-BN based RRAM devices 2.189
Unimore Resistive Random Access Memory (RRAM) Verilog-A Model 1.0.0 795
A Complete Statistical Investigation of RTN in HfO₂-Based RRAM in High Resistive State 773
Advanced Data Encryption ​using 2D Materials 729
A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis 711
Memristive technologies for data storage, computation, encryption, and radio-frequency communication 597
Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges 561
Coexistence of Grain‐Boundaries‐Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride 478
Biologically Plausible Information Propagation in a CMOS Integrate-and-Fire Artificial Neuron Circuit with Memristive Synapses 468
The Role of Carbon Doping on Breakdown, Current Collapse and Dynamic On-Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates 411
Anomalous random telegraph noise and temporary phenomena in resistive random access memory 407
A new verilog-A compact model of random telegraph noise in oxide-based RRAM for advanced circuit design 401
A microscopic physical description of RTN current fluctuations in HfOx RRAM 396
Random telegraph noise: Measurement, data analysis, and interpretation 394
Threshold Voltage Statistical Variability and Its Sensitivity to Critical Geometrical Parameters in Ultrascaled InGaAs and Silicon FETs 385
Recommended Methods to Study Resistive Switching Devices 385
A Compact Model of Hafnium-Oxide-Based Resistive Random Access Memory 375
Characterization of anomalous Random Telegraph Noise in Resistive Random Access Memory 373
The impact of interface and border traps on current–voltage, capacitance–voltage, and split‐CV mobility measurements in InGaAs MOSFETs 366
Effects of Border Traps on Transfer Curve Hysteresis and Split-CV Mobility Measurement in InGaAs Quantum-Well MOSFETs 361
Probing defects generation during stress in high-κ/metal gate FinFETs by random telegraph noise characterization 358
A consistent picture of cycling dispersion of resistive states in HfOx resistive random access memory 352
Understanding current instabilities in conductive atomic force microscopy 350
A multi-scale methodology connecting device physics to compact models and circuit applications for OxRAM technology 348
The Role of Defects and Interface Degradation on Ferroelectric HZO Capacitors Aging 344
Temperature impact on the reset operation in HfO2 RRAM 341
“Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs 341
A Novel Program-Verify Algorithm for Multi-Bit Operation in HfO2 RRAM 339
A study on HfO2 RRAM in HRS based on I–V and RTN analysis 336
Mixed-Mode Stress in Silicon-Germanium Heterostructure Bipolar Transistors: Insights from Experiments and Simulations 335
Combined variability/sensitivity analysis in III-V and silicon FETs for future technological nodes 332
Guidelines for a Reliable Analysis of Random Telegraph Noise in Electronic Devices 329
On the impact of channel compositional variations on total threshold voltage variability in nanoscale InGaAs MOSFETs 327
Instability of HfO2 RRAM devices: Comparing RTN and cycling variability 326
Progresses in Modeling HfOx RRAM Operations and Variability 325
Bipolar Resistive RAM Based on HfO2: Physics, Compact Modeling, and Variability Control 325
Random telegraph noise in HfOx Resistive Random Access Memory: From physics to compact modeling 324
Analysis of RTN and cycling variability in HfO2 RRAM devices in LRS 321
Monitoring Stress-Induced Defects in HK/MG FinFETs Using Random Telegraph Noise 320
Comprehensive physics-based RRAM compact model including the effect of variability and multi-level random telegraph noise 319
Characterization and TCAD Modeling of Mixed-Mode Stress Induced by Impact Ionization in Scaled SiGe HBTs 318
RTN analysis with FHMM as a tool for multi-trap characterization in HfOx RRAM 316
Random Telegraph Noise in Resistive Random Access Memories: Compact Modeling and Advanced Circuit Design 316
Localized characterization of charge transport and random telegraph noise at the nanoscale in HfO2 films combining scanning tunneling microscopy and multi-scale simulations 313
Random dopant fluctuation variability in scaled InGaAs dual-gate ultra-thin body MOSFETs: source and drain doping effect 312
Defect density evaluation in a high-k MOSFET gate stack combining experimental and modeling methods 311
On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon‐Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs 311
Study of RRAM-Based Binarized Neural Networks Inference Accelerators Using an RRAM Physics-Based Compact Model 306
Variability and sensitivity to process parameters variations in InGaAs Dual-Gate Ultra-Thin Body MOSFETS: A scaling perspective 306
Circuit Reliability Analysis of RRAM-based Logic-in-Memory Crossbar Architectures Including Line Parasitic Effects, Variability, and Random Telegraph Noise 306
Random Telegraph Noise analysis to investigate the properties of active traps of HfO2-Based RRAM in HRS 303
RTS Noise Characterization of HfOx RRAM in High Resistive State 303
A Hybrid CMOS-Memristor Spiking Neural Network Supporting Multiple Learning Rules 301
An investigation on the role of current compliance in HfO2-based RRAM in HRS using RTN and I-V data 301
Single vacancy defect spectroscopy on HfO2 using random telegraph noise signals from scanning tunneling microscopy 300
An Empirical Model for RRAM Resistance in Low- and High-Resistance State 299
Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs 298
Energy-efficient logic-in-memory I-bit full adder enabled by a physics-based RRAM compact model 297
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 296
Reconfigurable Smart In-Memory Computing Platform Supporting Logic and Binarized Neural Networks for Low-Power Edge Devices 295
Low-Bit Precision Neural Network Architecture with High Immunity to Variability and Random Telegraph Noise based on Resistive Memories 295
Perimeter and area current components in HfO2 and HfO2-x metal-insulator-metal capacitors 294
Statistical analysis of random telegraph noise in HfO2-based RRAM devices in LRS 293
Operations, Charge Transport, and Random Telegraph Noise in HfOx Resistive Random Access Memory: a Multi-scale Modeling Study 292
Circuit reliability of low-power rram-based logic-in-memory architectures 292
Extracting Atomic Defect Properties From Leakage Current Temperature Dependence 289
Scaling perspective and reliability of conductive filament formation in ultra-scaled HfO2 Resistive Random Access Memory 287
Factorial Hidden Markov Model analysis of Random Telegraph Noise in Resistive Random Access Memories 285
Multiscale modeling for application-oriented optimization of resistive random-access memory 284
Circuit Reliability Analysis of In-Memory Inference in Binarized Neural Networks 280
Effects of mole fraction variations and scaling on total variability in InGaAs MOSFETs 277
Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-Of-The-Roadmap III-V MOSFETs 275
Smart Logic-in-Memory Architecture for Low-Power non-von Neumann Computing 273
Multiscale modeling of electron-ion interactions for engineering novel electronic devices and materials 272
Multiscale modeling of defect-related phenomena in high-k based logic and memory devices 269
Insights into the off-state breakdown mechanisms in power GaN HEMTs 263
The effects of carbon on the bidirectional threshold voltage instabilities induced by negative gate bias stress in GaN MIS-HEMTs 262
METODO DI LETTURA PER CIRCUITI DEL TIPO LOGIC-IN-MEMORY E RELATIVA ARCHITETTURA CIRCUITALE 262
Guidelines for the Design of Random Telegraph Noise-Based True Random Number Generators 258
Advanced modeling and characterization techniques for innovative memory devices: The RRAM case 256
Coexistence of volatile and non-volatile resistive switching in 2D h-BN based electronic synapses 255
Smart Logic-in-Memory Architecture For Ultra-Low Power Large Fan-In Operations 254
Random Telegraph Signal Noise Properties of HfOx RRAM in High Resistive States 253
Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs 250
From Accelerated to Operating Conditions: How Trapped Charge Impacts on TDDB in SiO2 and HfO2 Stacks 243
Editorial: Brain-inspired computing: Neuroscience drives the development of new electronics and artificial intelligence 243
SIMPLY: Design of a RRAM-Based Smart Logic-in-Memory Architecture using RRAM Compact Model 243
Emergence of associative learning in a neuromorphic inference network 237
Multiscale modeling of electron-ion interactions for engineering novel electronic device and materials 233
Random telegraph noise in 2D hexagonal boron nitride dielectric films 231
Electroforming in Metal-Oxide Memristive Synapses 231
Optimized Synthesis Method for Ultra-Low Power Multi-Input Material Implication Logic With Emerging Non-Volatile Memories 231
Impedance Investigation of MIFM Ferroelectric Tunnel Junction using a Comprehensive Small-Signal Model 229
Self-Heating Effect in Silicon-Germanium Heterostructure Bipolar Transistors in Stress and Operating Conditions 229
Random Telegraph Noise in Metal-Oxide Memristors for True Random Number Generators: A Materials Study 229
Reliability of Logic-in-Memory Circuits in Resistive Memory Arrays 224
Energy-efficient non-von neumann computing architecture supporting multiple computing paradigms for logic and binarized neural networks 221
Measuring and analyzing Random Telegraph Noise in Nanoscale Devices: The case of resistive random access memories 220
Random Telegraph Noise analysis as a tool to link physical device features to electrical reliability in nanoscale devices 216
Combining Experiments and a Novel Small Signal Model to Investigate the Degradation Mechanisms in Ferroelectric Tunnel Junctions 209
Totale 34.594
Salva come PNG Salva come JPEG
Categoria #
all - tutte 150.928
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 150.928
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20222.653 0 0 211 168 135 375 95 205 329 290 614 231
2022/20232.798 260 356 189 243 364 376 76 280 325 29 189 111
2023/20242.236 135 112 145 270 451 173 173 259 42 95 96 285
2024/20257.585 437 140 197 482 1.097 1.125 555 462 665 452 1.057 916
2025/202615.915 998 764 956 1.282 1.883 1.765 1.516 611 3.197 1.235 986 722
2026/20271.863 643 1.183 37 0 0 0 0 0 0 0 0 0
Totale 42.398