We present the first fabrication of electronic synapses using two dimensional (2D) hexagonal boron nitride (/j-BN) as active switching layer. The main advantage of these devices compared to the transition metal oxide (TMO) based counterparts is that multilayer h-BN stacks show both volatile and non-volatile resistive switching (RS) depending on the programming stresses applied, which allows implementing short-term (STP) and long-term plasticity (LTP) rules using a single device and without the need of complex architectures.

Coexistence of volatile and non-volatile resistive switching in 2D h-BN based electronic synapses / Shi, Y.; Pan, C.; Chen, V.; Raghavan, N.; Pey, K. L.; Puglisi, F. M.; Pop, E.; Wong, H. -S. P.; Lanza, M.. - (2018), pp. 5.4.1-5.4.4. ((Intervento presentato al convegno 63rd IEEE International Electron Devices Meeting, IEDM 2017 tenutosi a USA nel 2017 [10.1109/IEDM.2017.8268333].

Coexistence of volatile and non-volatile resistive switching in 2D h-BN based electronic synapses

Puglisi, F. M.;
2018

Abstract

We present the first fabrication of electronic synapses using two dimensional (2D) hexagonal boron nitride (/j-BN) as active switching layer. The main advantage of these devices compared to the transition metal oxide (TMO) based counterparts is that multilayer h-BN stacks show both volatile and non-volatile resistive switching (RS) depending on the programming stresses applied, which allows implementing short-term (STP) and long-term plasticity (LTP) rules using a single device and without the need of complex architectures.
2017
63rd IEEE International Electron Devices Meeting, IEDM 2017
USA
2017
5.4.1
5.4.4
Shi, Y.; Pan, C.; Chen, V.; Raghavan, N.; Pey, K. L.; Puglisi, F. M.; Pop, E.; Wong, H. -S. P.; Lanza, M.
Coexistence of volatile and non-volatile resistive switching in 2D h-BN based electronic synapses / Shi, Y.; Pan, C.; Chen, V.; Raghavan, N.; Pey, K. L.; Puglisi, F. M.; Pop, E.; Wong, H. -S. P.; Lanza, M.. - (2018), pp. 5.4.1-5.4.4. ((Intervento presentato al convegno 63rd IEEE International Electron Devices Meeting, IEDM 2017 tenutosi a USA nel 2017 [10.1109/IEDM.2017.8268333].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1175097
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