| Nome |
# |
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“Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs, file e31e124e-b611-987f-e053-3705fe0a095a
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496
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The effects of carbon on the bidirectional threshold voltage instabilities induced by negative gate bias stress in GaN MIS-HEMTs, file e31e124e-5629-987f-e053-3705fe0a095a
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325
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The Role of Carbon Doping on Breakdown, Current Collapse and Dynamic On-Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates, file e31e124d-e2a6-987f-e053-3705fe0a095a
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322
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Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs, file e31e124f-8157-987f-e053-3705fe0a095a
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271
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Characterization and TCAD Modeling of Mixed-Mode Stress Induced by Impact Ionization in Scaled SiGe HBTs, file e31e124e-9f7a-987f-e053-3705fe0a095a
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242
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Coexistence of Grain‐Boundaries‐Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride, file e31e124f-5931-987f-e053-3705fe0a095a
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229
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Insights into the off-state breakdown mechanisms in power GaN HEMTs, file e31e124f-c08c-987f-e053-3705fe0a095a
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208
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A Complete Statistical Investigation of RTN in HfO₂-Based RRAM in High Resistive State, file e31e124f-2dfd-987f-e053-3705fe0a095a
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179
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Understanding current instabilities in conductive atomic force microscopy, file e31e124e-008e-987f-e053-3705fe0a095a
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168
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Random Telegraph Noise in Resistive Random Access Memories: Compact Modeling and Advanced Circuit Design, file e31e124f-48f9-987f-e053-3705fe0a095a
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141
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Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-Of-The-Roadmap III-V MOSFETs, file e31e124e-90f6-987f-e053-3705fe0a095a
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139
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Threshold Voltage Statistical Variability and Its Sensitivity to Critical Geometrical Parameters in Ultrascaled InGaAs and Silicon FETs, file e31e124f-a9f8-987f-e053-3705fe0a095a
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136
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Smart Logic-in-Memory Architecture for Low-Power non-von Neumann Computing, file e31e124e-976d-987f-e053-3705fe0a095a
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133
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|
Effects of mole fraction variations and scaling on total variability in InGaAs MOSFETs, file e31e124f-c658-987f-e053-3705fe0a095a
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120
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Modeling Nanoscale III–V Channel MOSFETs with the Self-Consistent Multi-Valley/Multi-Subband Monte Carlo Approach, file e31e124f-c8a7-987f-e053-3705fe0a095a
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118
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Understanding the Reliability of Ferroelectric Tunnel Junction Operations using an Advanced Small-Signal Model, file e31e124f-ce22-987f-e053-3705fe0a095a
|
112
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The impact of interface and border traps on current–voltage, capacitance–voltage, and split‐CV mobility measurements in InGaAs MOSFETs, file e31e124f-c49f-987f-e053-3705fe0a095a
|
110
|
|
On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon‐Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs, file e31e124f-9c3a-987f-e053-3705fe0a095a
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104
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Multiscale modeling for application-oriented optimization of resistive random-access memory, file e31e124e-91cd-987f-e053-3705fe0a095a
|
99
|
|
Bipolar Resistive RAM Based on HfO2: Physics, Compact Modeling, and Variability Control, file e31e1250-6793-987f-e053-3705fe0a095a
|
83
|
|
Editorial: Brain-inspired computing: Neuroscience drives the development of new electronics and artificial intelligence, file 8d881a8d-09a5-4a14-97be-cd07699c4d5e
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81
|
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Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and
Future Challenges, file bea511c5-6fbd-44b2-83a4-f97097aa8b92
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81
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Unimore Resistive Random Access Memory (RRAM) Verilog-A Model 1.0.0, file e31e124d-fa17-987f-e053-3705fe0a095a
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74
|
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Emergence of associative learning in a neuromorphic inference network, file e31e1250-721f-987f-e053-3705fe0a095a
|
64
|
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Spatially Controlled Generation and Probing of Random Telegraph Noise in Metal Nanocrystal Embedded HfO2Using Defect Nanospectroscopy, file 576ad209-44c1-4b88-addc-6663dfe98a12
|
47
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|
A Hybrid CMOS-Memristor Spiking Neural Network Supporting Multiple Learning Rules, file 4884149a-10be-4a21-9483-4e72341c4415
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39
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A Hybrid CMOS-Memristor Spiking Neural Network Supporting Multiple Learning Rules, file faa4e33b-d68a-4cd0-ae25-8c43c1603663
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39
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|
Anomalous random telegraph noise and temporary phenomena in resistive random access memory, file e31e1250-29d7-987f-e053-3705fe0a095a
|
38
|
|
Recommended Methods to Study Resistive Switching Devices, file e31e1250-3687-987f-e053-3705fe0a095a
|
36
|
|
The Role of Defects and Interface Degradation on Ferroelectric HZO Capacitors Aging, file 538b12db-57b2-4f77-a8d2-b8114edeadb9
|
29
|
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Temperature impact on the reset operation in HfO2 RRAM, file e31e1250-13fb-987f-e053-3705fe0a095a
|
24
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Biologically Plausible Information Propagation in a CMOS Integrate-and-Fire Artificial Neuron Circuit with Memristive Synapses, file bb9e747d-4423-4b80-b78c-cf18f9214d47
|
22
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Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights, file 80b713e4-d166-46ce-8b4c-d566aa89014d
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18
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A Novel Program-Verify Algorithm for Multi-Bit Operation in HfO2 RRAM, file e31e1250-5787-987f-e053-3705fe0a095a
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17
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Hardware implementation of a true random number generator integrating a hexagonal boron nitride memristor with a commercial microcontroller, file 816b37d4-fd56-4cf6-a4bd-4bfef747189a
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16
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Multi-Input Logic-in-Memory for Ultra-Low Power Non-Von Neumann Computing, file 98f84d59-199c-401d-a8f1-b20ae0661143
|
12
|
|
Standards for the Characterization of Endurance in Resistive Switching Devices, file 5ca96b1f-cb88-4e4c-8f17-946805555294
|
11
|
|
Linking the Intrinsic Electrical Response of Ferroelectric Devices to Material Properties by means of Impedance Spectroscopy, file 3a0b8071-614f-4675-ab01-2346e0c7b726
|
7
|
|
Biologically Plausible Information Propagation in a CMOS Integrate-and-Fire Artificial Neuron Circuit with Memristive Synapses, file 4bf65ad9-3ad8-4e95-8095-628760a4eb72
|
7
|
|
Smart Logic-in-Memory Architecture for Low-Power non-von Neumann Computing, file c610ffbe-76db-4a32-9e1f-fb1119bf0e1d
|
7
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Ultra-low power logic in memory with commercial grade memristors and FPGA-based smart-IMPLY architecture, file 9684ae6d-abc0-4818-9039-e3956584a1e4
|
6
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|
Smart Material Implication Using Spin-Transfer Torque Magnetic Tunnel Junctions for Logic-in-Memory Computing, file d979a229-a1db-471e-8337-22cf6842bb3d
|
6
|
|
Impedance Spectroscopy of Ferroelectric Capacitors and Ferroelectric Tunnel Junctions, file 81b3ae4c-73a0-4f38-ac33-a9133ec1f644
|
5
|
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Energy-efficient non-von neumann computing architecture supporting multiple computing paradigms for logic and binarized neural networks, file 2782e529-1d5f-47a0-a3f3-6898af9b250d
|
4
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|
Combining Experiments and a Novel Small Signal Model to Investigate the Degradation Mechanisms in Ferroelectric Tunnel Junctions, file 5aef5442-e029-481b-b30a-e9c5e3e59ec1
|
4
|
|
Scaled, Ferroelectric Memristive Synapse for Back-End-of-Line Integration with Neuromorphic Hardware, file a474e754-b22b-4d94-9ba6-0393c4466e99
|
4
|
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Impedance Investigation of MIFM Ferroelectric Tunnel Junction using a Comprehensive Small-Signal Model, file c314c9bb-c3e9-4929-aa1a-2a9b955fc3db
|
4
|
|
Anomalous random telegraph noise and temporary phenomena in resistive random access memory, file e31e1250-5fea-987f-e053-3705fe0a095a
|
4
|
|
Smart Material Implication Using Spin-Transfer Torque Magnetic Tunnel Junctions for Logic-in-Memory Computing, file 40a32eee-7d8d-49fd-9ae8-35e18a7a445f
|
1
|
|
Multiscale modeling of electron-ion interactions for engineering novel electronic device and materials, file e31e124f-0e22-987f-e053-3705fe0a095a
|
1
|
|
A Novel Program-Verify Algorithm for Multi-Bit Operation in HfO2 RRAM, file e31e1250-082c-987f-e053-3705fe0a095a
|
1
|
|
Temperature impact on the reset operation in HfO2 RRAM, file e31e1250-14a8-987f-e053-3705fe0a095a
|
1
|
| Totale |
4.445 |
