In this paper, we present simulation results that reproduce stress and recovery experiments in Carbon-doped power GaN MOS-HEMTs and explain the associated R ON increase and decrease as the result of the emission, redistribution and re-trapping of holes within the Carbon-doped buffer. The proposed model can straightforwardly clarify the beneficial impact of the recently proposed p-type drain contact on R ON degradation as being a consequence of enhanced hole trapping and reduced negative trapped charge within the buffer during stress.
Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs / Zagni, Nicolo; Chini, Alessandro; Puglisi, Francesco Maria; Pavan, Paolo; Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico; Verzellesi, Giovanni. - (2020), pp. 1-5. (Intervento presentato al convegno 2020 IEEE International Reliability Physics Symposium (IRPS) tenutosi a Dallas, TX (USA) nel 28 April-30 May 2020) [10.1109/IRPS45951.2020.9128816].