Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs

In this paper, we present simulation results that reproduce stress and recovery experiments in Carbon-doped power GaN MOS-HEMTs and explain the associated R ON increase and decrease as the result of the emission, redistribution and re-trapping of holes within the Carbon-doped buffer. The proposed model can straightforwardly clarify the beneficial impact of the recently proposed p-type drain contact on R ON degradation as being a consequence of enhanced hole trapping and reduced negative trapped charge within the buffer during stress.