In this work, we report a detailed discussion on the techniques and the requirements needed to enable Random Telegraph Noise (RTN) analysis as a tool to investigate device reliability. Starting with the understanding of the RTN signal properties, a set of best practices to perform measurements and data analysis is established to guarantee reliable results and a correct ensuing physical interpretation. It will be shown that combining dedicated and careful experiments with refined data analysis and comprehensive physics simulations is hence required to enable RTN analysis as a safe and innovative investigation tool for electron devices. The effectiveness of RTN analysis as an investigation tool is demonstrated on both FinFET and resistive memory devices: the parameters of RTN as observed in the experiments performed on FinFETs allow understanding the details of the defects generation during stress in such devices; RTN analysis on RRAM allows understanding the physical origin of RTN in these devices and to estimate the physical properties of defects involved in the phenomenon.
|Data di pubblicazione:||2016|
|Titolo:||Random Telegraph Noise analysis as a tool to link physical device features to electrical reliability in nanoscale devices|
|Autore/i:||Puglisi, Francesco Maria|
|Digital Object Identifier (DOI):||10.1109/IIRW.2016.7904891|
|Nome del convegno:||2016 IEEE International Integrated Reliability Workshop, IIRW 2016|
|Luogo del convegno:||Stanford Sierra Conference Center, usa|
|Data del convegno:||2016|
|Citazione:||Random Telegraph Noise analysis as a tool to link physical device features to electrical reliability in nanoscale devices / Puglisi, Francesco Maria. - (2016), pp. 13-17. ((Intervento presentato al convegno 2016 IEEE International Integrated Reliability Workshop, IIRW 2016 tenutosi a Stanford Sierra Conference Center, usa nel 2016.|
|Tipologia||Relazione in Atti di Convegno|
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