CHINI, Alessandro
 Distribuzione geografica
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Continente #
NA - Nord America 16.632
EU - Europa 6.638
AS - Asia 2.881
Continente sconosciuto - Info sul continente non disponibili 18
SA - Sud America 18
OC - Oceania 12
AF - Africa 7
Totale 26.206
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Nazione #
US - Stati Uniti d'America 16.585
GB - Regno Unito 2.386
SE - Svezia 1.082
CN - Cina 975
IT - Italia 972
DE - Germania 757
HK - Hong Kong 617
SG - Singapore 427
UA - Ucraina 406
TR - Turchia 378
FI - Finlandia 303
BG - Bulgaria 199
FR - Francia 158
IN - India 110
TW - Taiwan 91
JP - Giappone 86
RU - Federazione Russa 80
IE - Irlanda 68
KR - Corea 56
BE - Belgio 55
VN - Vietnam 49
CA - Canada 47
ID - Indonesia 47
NL - Olanda 40
ES - Italia 32
PL - Polonia 24
IR - Iran 19
LT - Lituania 18
EU - Europa 14
AU - Australia 10
RO - Romania 10
AT - Austria 9
CH - Svizzera 9
BR - Brasile 8
GR - Grecia 7
BD - Bangladesh 6
MY - Malesia 6
A2 - ???statistics.table.value.countryCode.A2??? 4
CL - Cile 4
CZ - Repubblica Ceca 4
DK - Danimarca 4
PE - Perù 4
BY - Bielorussia 3
IL - Israele 3
PK - Pakistan 3
IM - Isola di Man 2
MK - Macedonia 2
NO - Norvegia 2
NZ - Nuova Zelanda 2
RS - Serbia 2
SA - Arabia Saudita 2
TH - Thailandia 2
TN - Tunisia 2
AE - Emirati Arabi Uniti 1
AM - Armenia 1
AR - Argentina 1
DZ - Algeria 1
EC - Ecuador 1
EG - Egitto 1
LA - Repubblica Popolare Democratica del Laos 1
LK - Sri Lanka 1
LV - Lettonia 1
MA - Marocco 1
MD - Moldavia 1
NG - Nigeria 1
PT - Portogallo 1
SK - Slovacchia (Repubblica Slovacca) 1
ZA - Sudafrica 1
Totale 26.206
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Città #
Fairfield 2.533
Southend 1.965
Woodbridge 1.616
Chandler 1.437
Ashburn 1.377
Houston 1.326
Seattle 961
Wilmington 868
Cambridge 835
Jacksonville 815
Ann Arbor 769
Dearborn 673
Nyköping 664
Hong Kong 580
Beijing 366
Singapore 280
Izmir 209
Princeton 207
San Diego 199
Sofia 198
Eugene 183
Modena 161
Helsinki 155
Des Moines 136
Boardman 134
Milan 124
New York 93
Chicago 80
Redwood City 80
Grafing 70
Dublin 67
Padova 65
London 62
Guangzhou 49
Jakarta 47
Dong Ket 46
Nanjing 45
Brussels 41
Shanghai 40
Bremen 35
Rome 32
Norwalk 31
Taipei 31
Tokyo 31
Parma 30
Bologna 29
Toronto 29
Hefei 26
Leawood 26
Los Angeles 26
Duncan 25
Nürnberg 25
Munich 22
Kilburn 21
Turin 19
Falls Church 18
Jinan 18
Las Rozas de Madrid 18
Saint Petersburg 18
Verona 18
Dongguan 16
Kunming 16
Reggio Emilia 16
Stuttgart 16
Indiana 15
Ottawa 14
Hangzhou 13
Kraków 13
Wuhan 13
Auburn Hills 12
Frankfurt am Main 12
Hounslow 12
Kish 12
Paris 12
Hsinchu 11
Nanchang 11
Reggio Nell'emilia 11
Ankara 10
Bangalore 10
Burlington 10
Changsha 10
San Mateo 10
Andover 9
Bengaluru 9
Berlin 9
Bristol 9
Chiswick 9
Novellara 9
Shenyang 9
Shenzhen 9
Zhengzhou 9
Assèmini 8
Augusta 8
Catania 8
Columbus 8
Jiaxing 8
Marseille 8
Prescot 8
Ravenna 8
San Francisco 8
Totale 20.512
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Nome #
p-GaN/AlGaN/GaN Enhancement-Mode HEMTs 413
The Role of Carbon Doping on Breakdown, Current Collapse and Dynamic On-Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates 296
The Italian perspectives on the application of GaN technology in future SAR and RADAR systems 241
GaN-based power devices: Physics, reliability, and perspectives 236
Experimental and Numerical Analysis of Hole Emission Process from Carbon-Related Traps in GaN Buffer Layers 235
Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements 210
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs 204
Light sensitivity of current DLTS and its implications on the physics of DC-to-RF dispersion in AlGaAs-GaAs HFETs 200
12 W/mm power density AlGaN/GaN HEMTs on sapphire substrate 199
A novel GaN HEMT degradation mechanism observed during HTST test 198
Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design 197
Characterization and Numerical Simulations of High Power Field-Plated pHEMTs 196
Trapping and High Field Related Issues in GaN Power HEMTs 196
2.1 A/mm current density AlGaN/GaN HEMT 195
Long Term Stability of InGaAs/AlInAs/GaAs Methamorphic HEMTs 194
Experimental and Numerical Evaluation of RON Degradation in GaN HEMTs during Pulse-Mode Operation 194
Optimization of 0.25µm GaN HEMTs through numerical simulations 192
Dependence of impact ionization and kink on surface-deep-level dynamics in AlGaAs/GaAs HFETs 190
Parasitic effects and long term stability of InP-based HEMTs 190
Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs 189
p-capped GaN-AlGaN-GaN high-electron mobility transistors (HEMTs) 189
A C-Band High-Dynamic Range GaN HEMT Low-Noise Amplifier 188
Measurements of the InGaAs hole impact ionization coefficient in InAlAs/InGaAs pnp HBTs 185
Use of Double-Channel Heterostructures to Improve the Access Resistance and Linearity in GaN-Based HEMTs 184
Unpassivated GaN/AlGaN/GaN Power High Electron Mobility Transistors with Dispersion Controlled by Epitaxial Layer Design 184
Hot-electron-stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on SiC 184
P-GaN/AlGaN/GaN high electron mobility transistors 183
N-polar GaN/AlGaN/GaN high electron mobility transistors 182
Analytical Model for Power Switching GaN-Based HEMT Design 182
Study on the origin of dc-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs 181
False surface-trap signatures induced by buffer traps in AlGaN-GaN HEMTs 180
Field plate related reliability improvements in GaN-on-Si HEMTs 180
Fabrication of novel high frequency and high breakdown InAlAs-InGaAs pHEMTs 179
DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues 178
Power and linearity characteristics of GaN MISFETs on sapphire substrate 178
Experimental/numerical investigation on current collapse in AlGaN/GaN HEMT’s 178
Study of GaN HEMTs electrical degradation by means of numerical simulations 178
Power and Linearity Characteristics of Field-Plated Recessed-Gate AlGaN–GaN HEMTs 177
Systematic characterization of Cl2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs 176
“Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs 176
Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements 175
Reliability issues of Gallium Nitride High Electron Mobility Transistors 175
High linearity and high efficiency of class-B power amplifiers in GaN HEMT technology 174
High Linearity GaN HEMT Power Amplifier with Pre-Linearization Gate Diode 174
Experimental and numerical correlation between current-collapse and fe-doping profiles in GaN HEMTs 174
High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates 173
Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress 173
Characterization of GaN-based metal--semiconductor field-effect transistors by comparing electroluminescence, photoionization, and cathodoluminescence spectroscopies 171
Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation 170
Traps localization and analysis in GaN HEMTs 170
Correlation between DC and rf degradation due to deep levels in AlGaN/GaN HEMTs 170
Influence of properties of Si3N4 passivation layer on the electrical characteristics of Normally-off AlGaN/GaN HEMT 170
An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters 169
Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes 169
Selective dry etching of GaN over AlGaN in BCL3/SF6 mixtures 169
TCAD optimization of field-plated InAlAs-InGaAs HEMTs 168
A novel test methodology for RONand VTHmonitoring in GaN HEMTs during switch-mode operation 168
High-power polarization-engineered GaN/AlGaN/GaN HEMTs without surface passivation 167
Unpassivated p-GaN/AlGaN/GaN HEMTs with 7.1 W/mm at 10 GHz 167
Origin of etch delay time in Cl2 dry etching of AlGaN/GaN structures 167
Physical investigation of high-field degradation mechanisms in GaN/AlGaN/GaN hemts 167
Insights into the off-state breakdown mechanisms in power GaN HEMTs 167
Analysis of GaN HEMT Failure Mechanisms During DC and Large-Signal RF Operation 166
Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs 166
Influence of device self-heating on trap activation energy extraction 164
Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics 163
Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs 163
Very High Performance GaN HEMT devices by Optimized Buffer and Field Plate Technology 161
A novel degradation mechanism of AlGaN/GaN/Silicon heterostructures related to the generation of interface traps 160
Surface-related drain current dispersion effects in AlGaN-GaN HEMTs 159
Reliability aspects of GaN-HEMTs on composite substrates 157
Micro-power photovoltaic harvester based on a frequency-to-voltage MPPT tracker 157
Degradation of AlGaN/GaN Schottky diodes on silicon: Role of defects at the AlGaN/GaN interface 157
High linearity GaN HEMT power amplifier with pre-linearization gate diode 157
Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs 157
Trap characterization in buried-gate n-channel 6H-SiC JFETs 156
Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs 156
High-linearity class B power amplifiers in GaN HEMT technology 156
Analysis of self-oscillating switched-mode circuit for low-voltage energy harvesting 155
Fabrication, Characterization and Numerical Simulation of High Breakdown Voltage pHEMTs 155
A comprehensive reliability evaluation of high-performance AlGaN/GaN HEMTs for space applications 154
Correlation between dynamic Rdson transients and Carbon related buffer traps in AlGaN/GaN HEMTs 152
N-polar GaN epitaxy and high electron mobility transistors 152
The influence of interface states at the Schottky junction on the large signal behavior of copper-gate GaN HEMTs 151
Diagnosis of trapping phenomena in GaN MESFETs 150
Boost-converter-based solar harvester for low power applications 149
A new field-plated GaN HEMT structure with improved power and noise performance 149
Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias 148
Effect of gate recessing on linearity characteristics of AlGaN/GaN HEMTs 148
Evolution of on-resistance (RON) and threshold voltage (VTH) in GaN HEMTs during switch-mode operation 146
Reliability Investigation of GaN HEMTs for MMICs Applications 144
Buffer traps in Fe-doped AlGaN/GaN HEMTs: Investigation of the physical properties based on pulsed and transient measurements 143
Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs 143
Fabrication and Characterization of N-Face AlGaN/GaN/AlGaN HEMTs 141
High performance AlGaN/GaN HEMTs with a field plated gate structure 138
Role of buffer doping and pre-existing trap states in the current collapse and degradation of AlGaN/GaN HEMTs 137
High Linearity Class B Power Amplifiers in GaN HEMT Technology 135
Electroluminescence analysis of time-dependent reverse-bias degradation of HEMTs: A complete model 135
AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction 134
On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs 133
Totale 17.481
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Categoria #
all - tutte 104.759
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 104.759
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20205.092 0 0 241 472 569 845 923 559 604 297 314 268
2020/20214.936 394 162 305 399 492 446 503 528 234 771 290 412
2021/20223.873 151 564 389 160 119 261 210 153 353 308 784 421
2022/20233.908 419 427 310 322 432 637 59 440 516 47 164 135
2023/20242.710 120 190 170 340 611 109 124 477 101 85 67 316
2024/2025655 439 123 93 0 0 0 0 0 0 0 0 0
Totale 26.661