CHINI, Alessandro
 Distribuzione geografica
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Continente #
NA - Nord America 23.510
AS - Asia 12.935
EU - Europa 9.352
SA - Sud America 1.485
AF - Africa 188
Continente sconosciuto - Info sul continente non disponibili 20
OC - Oceania 20
Totale 47.510
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Nazione #
US - Stati Uniti d'America 23.229
SG - Singapore 3.765
CN - Cina 3.583
GB - Regno Unito 2.947
HK - Hong Kong 1.925
IT - Italia 1.491
VN - Vietnam 1.217
SE - Svezia 1.177
BR - Brasile 1.139
DE - Germania 965
FR - Francia 587
KR - Corea 537
RU - Federazione Russa 500
UA - Ucraina 440
FI - Finlandia 435
TR - Turchia 426
IN - India 362
BG - Bulgaria 208
TW - Taiwan 175
JP - Giappone 167
ID - Indonesia 133
CA - Canada 132
BD - Bangladesh 128
AR - Argentina 107
NL - Olanda 104
IQ - Iraq 88
MX - Messico 80
PL - Polonia 80
IE - Irlanda 77
BE - Belgio 67
ZA - Sudafrica 63
ES - Italia 61
EC - Ecuador 53
PK - Pakistan 53
CO - Colombia 52
UZ - Uzbekistan 45
SA - Arabia Saudita 38
AE - Emirati Arabi Uniti 37
LT - Lituania 37
CL - Cile 36
PH - Filippine 35
AT - Austria 30
MA - Marocco 30
VE - Venezuela 29
CH - Svizzera 27
NP - Nepal 24
JO - Giordania 23
PE - Perù 23
IR - Iran 22
MY - Malesia 22
PY - Paraguay 20
KE - Kenya 19
AU - Australia 17
DK - Danimarca 17
EG - Egitto 16
RO - Romania 16
TN - Tunisia 16
TH - Thailandia 15
EU - Europa 14
GR - Grecia 14
DZ - Algeria 13
IL - Israele 13
PA - Panama 13
UY - Uruguay 13
BH - Bahrain 12
DO - Repubblica Dominicana 12
JM - Giamaica 11
BY - Bielorussia 10
KZ - Kazakistan 10
OM - Oman 10
AZ - Azerbaigian 9
BO - Bolivia 9
PT - Portogallo 9
CR - Costa Rica 8
CZ - Repubblica Ceca 8
AL - Albania 7
HN - Honduras 7
LB - Libano 7
ET - Etiopia 6
RS - Serbia 6
SK - Slovacchia (Repubblica Slovacca) 6
SN - Senegal 6
AM - Armenia 5
KW - Kuwait 5
SY - Repubblica araba siriana 5
A2 - ???statistics.table.value.countryCode.A2??? 4
CY - Cipro 4
GE - Georgia 4
KG - Kirghizistan 4
LA - Repubblica Popolare Democratica del Laos 4
LK - Sri Lanka 4
LV - Lettonia 4
PS - Palestinian Territory 4
SV - El Salvador 4
BA - Bosnia-Erzegovina 3
BB - Barbados 3
EE - Estonia 3
GA - Gabon 3
KH - Cambogia 3
MD - Moldavia 3
Totale 47.449
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Città #
Fairfield 2.534
Santa Clara 2.374
Singapore 2.219
Ashburn 1.968
Southend 1.965
Hong Kong 1.841
Woodbridge 1.616
Chandler 1.437
Houston 1.339
Hefei 1.252
Seattle 979
Wilmington 881
Cambridge 835
Jacksonville 818
Ann Arbor 769
Dearborn 673
Nyköping 664
Beijing 613
London 539
San Jose 503
Seoul 440
Ho Chi Minh City 328
Hanoi 314
Council Bluffs 297
Chicago 289
Milan 278
Helsinki 268
The Dalles 251
Los Angeles 248
Kent 226
Izmir 210
Princeton 207
Sofia 202
San Diego 201
Modena 200
Eugene 183
Lauterbourg 169
New York 169
Boardman 142
Des Moines 138
Buffalo 130
Moscow 116
Shanghai 113
Jakarta 98
São Paulo 85
Frankfurt am Main 81
Redwood City 80
Padova 79
Tokyo 77
Dublin 75
Munich 73
Guangzhou 72
Dallas 70
Grafing 70
Wallingford 62
Nanjing 60
Salt Lake City 60
Taipei 60
Da Nang 58
Bengaluru 51
Haiphong 51
Brussels 47
Dong Ket 46
Orem 46
Rome 46
Toronto 46
Bologna 45
Chennai 43
Columbus 43
Warsaw 42
Brooklyn 41
Tashkent 40
Washington 40
Atlanta 38
Baghdad 38
Rio de Janeiro 37
Paris 36
Bremen 35
Redondo Beach 34
Reggio Emilia 34
Johannesburg 33
Norwalk 32
Parma 31
Stockholm 30
Changsha 29
Denver 29
Hsinchu 29
Amsterdam 27
Jinan 27
Phoenix 27
Tampa 27
Leawood 26
Turin 26
Duncan 25
Elk Grove Village 25
Mexico City 25
Nürnberg 25
San Francisco 25
Boston 24
Brantford 24
Totale 33.523
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Nome #
p-GaN/AlGaN/GaN Enhancement-Mode HEMTs 619
GaN-based power devices: Physics, reliability, and perspectives 564
The Role of Carbon Doping on Breakdown, Current Collapse and Dynamic On-Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates 398
A novel test methodology for RONand VTHmonitoring in GaN HEMTs during switch-mode operation 343
Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements 340
Experimental and Numerical Analysis of Hole Emission Process from Carbon-Related Traps in GaN Buffer Layers 335
Analytical Model for Power Switching GaN-Based HEMT Design 324
Dependence of impact ionization and kink on surface-deep-level dynamics in AlGaAs/GaAs HFETs 320
Characterization and Numerical Simulations of High Power Field-Plated pHEMTs 318
N-polar GaN/AlGaN/GaN high electron mobility transistors 315
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs 313
A C-Band High-Dynamic Range GaN HEMT Low-Noise Amplifier 312
Light sensitivity of current DLTS and its implications on the physics of DC-to-RF dispersion in AlGaAs-GaAs HFETs 310
“Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs 310
A comprehensive reliability evaluation of high-performance AlGaN/GaN HEMTs for space applications 308
DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues 307
False surface-trap signatures induced by buffer traps in AlGaN-GaN HEMTs 307
12 W/mm power density AlGaN/GaN HEMTs on sapphire substrate 305
The Italian perspectives on the application of GaN technology in future SAR and RADAR systems 304
Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements 300
Analysis of GaN HEMT Failure Mechanisms During DC and Large-Signal RF Operation 290
p-capped GaN-AlGaN-GaN high-electron mobility transistors (HEMTs) 290
Study on the origin of dc-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs 289
The influence of interface states at the Schottky junction on the large signal behavior of copper-gate GaN HEMTs 289
TCAD optimization of field-plated InAlAs-InGaAs HEMTs 288
Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design 288
Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs 288
Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs 288
Partial Recovery of Dynamic RON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs 287
Experimental and numerical investigation of Poole-Frenkel effect on dynamic RON transients in C-doped p-GaN HEMTs 287
Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation 285
Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics 285
2.1 A/mm current density AlGaN/GaN HEMT 284
Long Term Stability of InGaAs/AlInAs/GaAs Methamorphic HEMTs 284
Fabrication of novel high frequency and high breakdown InAlAs-InGaAs pHEMTs 284
Parasitic effects and long term stability of InP-based HEMTs 283
Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress 282
Influence of properties of Si3N4 passivation layer on the electrical characteristics of Normally-off AlGaN/GaN HEMT 280
Power and Linearity Characteristics of Field-Plated Recessed-Gate AlGaN–GaN HEMTs 278
High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates 277
High-power polarization-engineered GaN/AlGaN/GaN HEMTs without surface passivation 276
A novel GaN HEMT degradation mechanism observed during HTST test 275
Unpassivated GaN/AlGaN/GaN Power High Electron Mobility Transistors with Dispersion Controlled by Epitaxial Layer Design 274
An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters 274
Field plate related reliability improvements in GaN-on-Si HEMTs 274
Experimental and numerical correlation between current-collapse and fe-doping profiles in GaN HEMTs 274
P-GaN/AlGaN/GaN high electron mobility transistors 273
Measurements of the InGaAs hole impact ionization coefficient in InAlAs/InGaAs pnp HBTs 271
Traps localization and analysis in GaN HEMTs 271
Use of Double-Channel Heterostructures to Improve the Access Resistance and Linearity in GaN-Based HEMTs 270
Optimization of 0.25µm GaN HEMTs through numerical simulations 270
Experimental/numerical investigation on current collapse in AlGaN/GaN HEMT’s 270
Study of GaN HEMTs electrical degradation by means of numerical simulations 270
Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs 269
On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon‐Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs 269
Correlation between DC and rf degradation due to deep levels in AlGaN/GaN HEMTs 268
Trapping and High Field Related Issues in GaN Power HEMTs 268
Influence of device self-heating on trap activation energy extraction 266
Hot-electron-stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on SiC 266
Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs 265
Characterization of GaN-based metal--semiconductor field-effect transistors by comparing electroluminescence, photoionization, and cathodoluminescence spectroscopies 263
Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs 263
Experimental and Numerical Evaluation of RON Degradation in GaN HEMTs during Pulse-Mode Operation 261
Micro-power photovoltaic harvester based on a frequency-to-voltage MPPT tracker 260
Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes 259
Unpassivated p-GaN/AlGaN/GaN HEMTs with 7.1 W/mm at 10 GHz 257
Mechanisms of RF Current Collapse in AlGaN–GaN High Electron Mobility Transistors 257
Selective dry etching of GaN over AlGaN in BCL3/SF6 mixtures 255
Reliability issues of Gallium Nitride High Electron Mobility Transistors 254
Reliability aspects of GaN-HEMTs on composite substrates 252
Insights into the off-state breakdown mechanisms in power GaN HEMTs 252
Evolution of on-resistance (RON) and threshold voltage (VTH) in GaN HEMTs during switch-mode operation 249
Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs 248
Origin of etch delay time in Cl2 dry etching of AlGaN/GaN structures 248
Systematic characterization of Cl2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs 248
The effects of carbon on the bidirectional threshold voltage instabilities induced by negative gate bias stress in GaN MIS-HEMTs 247
Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias 246
Physical investigation of high-field degradation mechanisms in GaN/AlGaN/GaN hemts 244
Boost-converter-based solar harvester for low power applications 243
Very High Performance GaN HEMT devices by Optimized Buffer and Field Plate Technology 242
High Linearity GaN HEMT Power Amplifier with Pre-Linearization Gate Diode 240
Power and linearity characteristics of GaN MISFETs on sapphire substrate 238
Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs 236
Fabrication, Characterization and Numerical Simulation of High Breakdown Voltage pHEMTs 236
GaN RF and GaN Power – Device Parameter Drifts Analysis 235
High linearity and high efficiency of class-B power amplifiers in GaN HEMT technology 234
A novel degradation mechanism of AlGaN/GaN/Silicon heterostructures related to the generation of interface traps 234
Analysis of self-oscillating switched-mode circuit for low-voltage energy harvesting 233
Buffer traps in Fe-doped AlGaN/GaN HEMTs: Investigation of the physical properties based on pulsed and transient measurements 233
AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction 233
Correlation between dynamic Rdson transients and Carbon related buffer traps in AlGaN/GaN HEMTs 232
Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs 232
N-polar GaN epitaxy and high electron mobility transistors 232
Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement 230
PARASITIC EFFECTS OF BUFFER DESIGN ON STATIC AND DYNAMIC PARAMETERS OF ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS 230
Design of field-plated InP-based HEMTs 229
Degradation of AlGaN/GaN Schottky diodes on silicon: Role of defects at the AlGaN/GaN interface 229
Surface-related drain current dispersion effects in AlGaN-GaN HEMTs 228
Deep levels characterization in GaN HEMTs - Part II: Experimental and numerical evaluation of self-heating effects on the extraction of traps activation energy 227
Analysis of High-Electric-Field Degradation in AlGaN/GaN HEMTs 226
Totale 27.766
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Categoria #
all - tutte 170.436
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 170.436
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021702 0 0 0 0 0 0 0 0 0 0 290 412
2021/20223.873 151 564 389 160 119 261 210 153 353 308 784 421
2022/20233.908 419 427 310 322 432 637 59 440 516 47 164 135
2023/20242.710 120 190 170 340 611 109 124 477 101 85 67 316
2024/20259.433 439 123 105 618 1.606 1.228 573 664 972 317 1.189 1.599
2025/202612.562 784 970 1.244 1.201 1.632 1.033 1.743 741 1.523 1.417 274 0
Totale 48.001