CHINI, Alessandro
 Distribuzione geografica
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Continente #
NA - Nord America 16.432
EU - Europa 6.488
AS - Asia 2.242
Continente sconosciuto - Info sul continente non disponibili 18
SA - Sud America 18
OC - Oceania 12
AF - Africa 7
Totale 25.217
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Nazione #
US - Stati Uniti d'America 16.387
GB - Regno Unito 2.384
SE - Svezia 1.082
IT - Italia 894
CN - Cina 863
DE - Germania 744
HK - Hong Kong 612
UA - Ucraina 406
TR - Turchia 376
FI - Finlandia 299
BG - Bulgaria 199
FR - Francia 150
IN - India 100
JP - Giappone 72
RU - Federazione Russa 70
TW - Taiwan 68
IE - Irlanda 61
BE - Belgio 53
VN - Vietnam 49
CA - Canada 45
KR - Corea 43
NL - Olanda 37
PL - Polonia 23
IR - Iran 19
LT - Lituania 17
SG - Singapore 16
EU - Europa 14
ES - Italia 12
AU - Australia 10
RO - Romania 10
AT - Austria 9
CH - Svizzera 9
BR - Brasile 8
BD - Bangladesh 6
GR - Grecia 6
MY - Malesia 6
A2 - ???statistics.table.value.countryCode.A2??? 4
CL - Cile 4
CZ - Repubblica Ceca 4
DK - Danimarca 4
PE - Perù 4
BY - Bielorussia 3
IL - Israele 3
IM - Isola di Man 2
MK - Macedonia 2
NO - Norvegia 2
NZ - Nuova Zelanda 2
RS - Serbia 2
SA - Arabia Saudita 2
TH - Thailandia 2
TN - Tunisia 2
AE - Emirati Arabi Uniti 1
AM - Armenia 1
AR - Argentina 1
DZ - Algeria 1
EC - Ecuador 1
EG - Egitto 1
LA - Repubblica Popolare Democratica del Laos 1
LK - Sri Lanka 1
LV - Lettonia 1
MA - Marocco 1
MD - Moldavia 1
NG - Nigeria 1
PK - Pakistan 1
PT - Portogallo 1
SK - Slovacchia (Repubblica Slovacca) 1
ZA - Sudafrica 1
Totale 25.217
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Città #
Fairfield 2.533
Southend 1.965
Woodbridge 1.616
Chandler 1.437
Ashburn 1.343
Houston 1.326
Seattle 961
Wilmington 868
Cambridge 835
Jacksonville 815
Ann Arbor 769
Dearborn 673
Nyköping 664
Hong Kong 580
Beijing 359
Izmir 209
Princeton 207
San Diego 199
Sofia 198
Eugene 183
Helsinki 155
Modena 153
Des Moines 136
Milan 102
New York 93
Redwood City 80
Grafing 70
London 62
Padova 62
Dublin 60
Boardman 54
Dong Ket 46
Nanjing 45
Guangzhou 44
Brussels 41
Bremen 35
Norwalk 31
Parma 30
Bologna 29
Toronto 29
Taipei 28
Hefei 26
Leawood 26
Duncan 25
Nürnberg 25
Rome 24
Los Angeles 23
Kilburn 21
Shanghai 21
Tokyo 20
Turin 19
Falls Church 18
Saint Petersburg 18
Verona 18
Jinan 17
Munich 17
Dongguan 16
Kunming 16
Stuttgart 16
Indiana 15
Chicago 14
Reggio Emilia 14
Hangzhou 13
Kraków 13
Auburn Hills 12
Hounslow 12
Kish 12
Ottawa 12
Paris 12
Nanchang 11
Reggio Nell'emilia 11
Ankara 10
Bangalore 10
Burlington 10
Hsinchu 10
San Mateo 10
Andover 9
Berlin 9
Bristol 9
Changsha 9
Chiswick 9
Novellara 9
Shenyang 9
Zhengzhou 9
Assèmini 8
Augusta 8
Catania 8
Columbus 8
Frankfurt am Main 8
Marseille 8
Prescot 8
San Francisco 8
Tulare 8
Wuhan 8
Bengaluru 7
Chengdu 7
Delhi 7
Fuzhou 7
Gif-sur-yvette 7
Laveno-Mombello 7
Totale 19.886
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Nome #
p-GaN/AlGaN/GaN Enhancement-Mode HEMTs 356
The Role of Carbon Doping on Breakdown, Current Collapse and Dynamic On-Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates 290
The Italian perspectives on the application of GaN technology in future SAR and RADAR systems 235
Experimental and Numerical Analysis of Hole Emission Process from Carbon-Related Traps in GaN Buffer Layers 229
Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements 208
GaN-based power devices: Physics, reliability, and perspectives 205
12 W/mm power density AlGaN/GaN HEMTs on sapphire substrate 197
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs 197
Light sensitivity of current DLTS and its implications on the physics of DC-to-RF dispersion in AlGaAs-GaAs HFETs 194
A novel GaN HEMT degradation mechanism observed during HTST test 194
2.1 A/mm current density AlGaN/GaN HEMT 193
Characterization and Numerical Simulations of High Power Field-Plated pHEMTs 193
Trapping and High Field Related Issues in GaN Power HEMTs 193
Long Term Stability of InGaAs/AlInAs/GaAs Methamorphic HEMTs 192
Experimental and Numerical Evaluation of RON Degradation in GaN HEMTs during Pulse-Mode Operation 189
Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design 189
Parasitic effects and long term stability of InP-based HEMTs 188
Optimization of 0.25µm GaN HEMTs through numerical simulations 188
Dependence of impact ionization and kink on surface-deep-level dynamics in AlGaAs/GaAs HFETs 187
p-capped GaN-AlGaN-GaN high-electron mobility transistors (HEMTs) 187
Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs 186
A C-Band High-Dynamic Range GaN HEMT Low-Noise Amplifier 184
Use of Double-Channel Heterostructures to Improve the Access Resistance and Linearity in GaN-Based HEMTs 183
Measurements of the InGaAs hole impact ionization coefficient in InAlAs/InGaAs pnp HBTs 183
P-GaN/AlGaN/GaN high electron mobility transistors 182
Unpassivated GaN/AlGaN/GaN Power High Electron Mobility Transistors with Dispersion Controlled by Epitaxial Layer Design 180
Analytical Model for Power Switching GaN-Based HEMT Design 179
False surface-trap signatures induced by buffer traps in AlGaN-GaN HEMTs 178
Hot-electron-stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on SiC 178
N-polar GaN/AlGaN/GaN high electron mobility transistors 177
Fabrication of novel high frequency and high breakdown InAlAs-InGaAs pHEMTs 177
Field plate related reliability improvements in GaN-on-Si HEMTs 177
Power and linearity characteristics of GaN MISFETs on sapphire substrate 176
Power and Linearity Characteristics of Field-Plated Recessed-Gate AlGaN–GaN HEMTs 175
Study on the origin of dc-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs 175
Experimental/numerical investigation on current collapse in AlGaN/GaN HEMT’s 175
Study of GaN HEMTs electrical degradation by means of numerical simulations 175
Systematic characterization of Cl2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs 174
DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues 173
High Linearity GaN HEMT Power Amplifier with Pre-Linearization Gate Diode 173
High linearity and high efficiency of class-B power amplifiers in GaN HEMT technology 172
High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates 171
Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements 171
Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress 171
Experimental and numerical correlation between current-collapse and fe-doping profiles in GaN HEMTs 171
Characterization of GaN-based metal--semiconductor field-effect transistors by comparing electroluminescence, photoionization, and cathodoluminescence spectroscopies 170
Reliability issues of Gallium Nitride High Electron Mobility Transistors 170
Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation 168
Correlation between DC and rf degradation due to deep levels in AlGaN/GaN HEMTs 168
Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes 168
An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters 167
TCAD optimization of field-plated InAlAs-InGaAs HEMTs 166
Influence of properties of Si3N4 passivation layer on the electrical characteristics of Normally-off AlGaN/GaN HEMT 166
Selective dry etching of GaN over AlGaN in BCL3/SF6 mixtures 165
“Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs 165
High-power polarization-engineered GaN/AlGaN/GaN HEMTs without surface passivation 164
Unpassivated p-GaN/AlGaN/GaN HEMTs with 7.1 W/mm at 10 GHz 164
Analysis of GaN HEMT Failure Mechanisms During DC and Large-Signal RF Operation 164
Origin of etch delay time in Cl2 dry etching of AlGaN/GaN structures 164
Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs 163
Physical investigation of high-field degradation mechanisms in GaN/AlGaN/GaN hemts 163
Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics 162
Traps localization and analysis in GaN HEMTs 162
A novel test methodology for RONand VTHmonitoring in GaN HEMTs during switch-mode operation 162
Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs 162
Influence of device self-heating on trap activation energy extraction 161
Insights into the off-state breakdown mechanisms in power GaN HEMTs 160
Very High Performance GaN HEMT devices by Optimized Buffer and Field Plate Technology 159
Micro-power photovoltaic harvester based on a frequency-to-voltage MPPT tracker 157
Reliability aspects of GaN-HEMTs on composite substrates 156
A novel degradation mechanism of AlGaN/GaN/Silicon heterostructures related to the generation of interface traps 155
Analysis of self-oscillating switched-mode circuit for low-voltage energy harvesting 154
Trap characterization in buried-gate n-channel 6H-SiC JFETs 154
High-linearity class B power amplifiers in GaN HEMT technology 154
Surface-related drain current dispersion effects in AlGaN-GaN HEMTs 153
High linearity GaN HEMT power amplifier with pre-linearization gate diode 153
Degradation of AlGaN/GaN Schottky diodes on silicon: Role of defects at the AlGaN/GaN interface 152
Fabrication, Characterization and Numerical Simulation of High Breakdown Voltage pHEMTs 152
Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs 151
The influence of interface states at the Schottky junction on the large signal behavior of copper-gate GaN HEMTs 149
Boost-converter-based solar harvester for low power applications 148
Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias 148
Diagnosis of trapping phenomena in GaN MESFETs 148
Correlation between dynamic Rdson transients and Carbon related buffer traps in AlGaN/GaN HEMTs 147
Effect of gate recessing on linearity characteristics of AlGaN/GaN HEMTs 146
A new field-plated GaN HEMT structure with improved power and noise performance 146
Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs 146
N-polar GaN epitaxy and high electron mobility transistors 144
Evolution of on-resistance (RON) and threshold voltage (VTH) in GaN HEMTs during switch-mode operation 143
Buffer traps in Fe-doped AlGaN/GaN HEMTs: Investigation of the physical properties based on pulsed and transient measurements 141
Fabrication and Characterization of N-Face AlGaN/GaN/AlGaN HEMTs 140
Reliability Investigation of GaN HEMTs for MMICs Applications 138
High performance AlGaN/GaN HEMTs with a field plated gate structure 136
Role of buffer doping and pre-existing trap states in the current collapse and degradation of AlGaN/GaN HEMTs 135
High Linearity Class B Power Amplifiers in GaN HEMT Technology 133
Electroluminescence analysis of time-dependent reverse-bias degradation of HEMTs: A complete model 133
Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs 133
AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction 132
On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs 130
A comprehensive reliability evaluation of high-performance AlGaN/GaN HEMTs for space applications 128
Totale 17.038
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Categoria #
all - tutte 91.295
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 91.295
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/20191.241 0 0 0 0 0 0 0 0 0 0 640 601
2019/20205.616 291 233 241 472 569 845 923 559 604 297 314 268
2020/20214.936 394 162 305 399 492 446 503 528 234 771 290 412
2021/20223.873 151 564 389 160 119 261 210 153 353 308 784 421
2022/20233.908 419 427 310 322 432 637 59 440 516 47 164 135
2023/20242.375 120 190 170 340 611 109 124 477 101 85 48 0
Totale 25.671