CHINI, Alessandro
 Distribuzione geografica
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Continente #
NA - Nord America 26.535
AS - Asia 13.389
EU - Europa 9.675
SA - Sud America 1.509
Continente sconosciuto - Info sul continente non disponibili 512
AF - Africa 189
OC - Oceania 20
Totale 51.829
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Nazione #
US - Stati Uniti d'America 26.152
SG - Singapore 3.806
CN - Cina 3.636
GB - Regno Unito 2.955
HK - Hong Kong 1.937
IT - Italia 1.764
VN - Vietnam 1.220
SE - Svezia 1.177
BR - Brasile 1.150
DE - Germania 972
KR - Corea 603
FR - Francia 594
RU - Federazione Russa 500
UA - Ucraina 442
FI - Finlandia 435
TR - Turchia 427
IN - India 371
BD - Bangladesh 369
BG - Bulgaria 209
CA - Canada 191
TW - Taiwan 186
JP - Giappone 175
ID - Indonesia 136
NL - Olanda 114
AR - Argentina 112
IQ - Iraq 88
MX - Messico 83
PL - Polonia 82
IE - Irlanda 77
BE - Belgio 70
ZA - Sudafrica 64
ES - Italia 63
CO - Colombia 58
EC - Ecuador 53
PK - Pakistan 53
UZ - Uzbekistan 45
AE - Emirati Arabi Uniti 38
SA - Arabia Saudita 38
LT - Lituania 37
CL - Cile 36
PH - Filippine 35
AT - Austria 30
MA - Marocco 30
VE - Venezuela 29
CH - Svizzera 27
MY - Malesia 26
NP - Nepal 24
JO - Giordania 23
PE - Perù 23
IR - Iran 22
PY - Paraguay 21
DK - Danimarca 20
KE - Kenya 19
AU - Australia 17
CR - Costa Rica 17
JM - Giamaica 17
EG - Egitto 16
RO - Romania 16
TH - Thailandia 16
TN - Tunisia 16
EU - Europa 14
GR - Grecia 14
PA - Panama 14
DZ - Algeria 13
IL - Israele 13
UY - Uruguay 13
BH - Bahrain 12
DO - Repubblica Dominicana 12
PT - Portogallo 11
BY - Bielorussia 10
KZ - Kazakistan 10
OM - Oman 10
AZ - Azerbaigian 9
BO - Bolivia 9
HN - Honduras 9
CZ - Repubblica Ceca 8
SV - El Salvador 8
TT - Trinidad e Tobago 8
AL - Albania 7
LB - Libano 7
ET - Etiopia 6
RS - Serbia 6
SK - Slovacchia (Repubblica Slovacca) 6
SN - Senegal 6
AM - Armenia 5
GT - Guatemala 5
KW - Kuwait 5
NI - Nicaragua 5
SY - Repubblica araba siriana 5
A2 - ???statistics.table.value.countryCode.A2??? 4
BA - Bosnia-Erzegovina 4
BB - Barbados 4
CY - Cipro 4
GE - Georgia 4
KG - Kirghizistan 4
LA - Repubblica Popolare Democratica del Laos 4
LK - Sri Lanka 4
LV - Lettonia 4
PS - Palestinian Territory 4
EE - Estonia 3
Totale 51.265
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Città #
Fairfield 2.535
Santa Clara 2.444
Ashburn 2.331
Singapore 2.235
Southend 1.965
Hong Kong 1.851
Woodbridge 1.616
Chandler 1.437
Houston 1.343
Hefei 1.252
Seattle 990
Wilmington 885
San Jose 875
Cambridge 835
Jacksonville 822
Ann Arbor 769
Dearborn 673
Nyköping 664
Beijing 621
London 539
Council Bluffs 449
Seoul 442
Milan 339
Ho Chi Minh City 328
Los Angeles 325
Hanoi 315
Chicago 297
Helsinki 268
The Dalles 251
New York 240
Kent 228
Izmir 210
Princeton 208
Modena 206
San Diego 203
Sofia 202
Eugene 183
Lauterbourg 169
Boardman 164
Buffalo 152
Des Moines 138
Shanghai 118
Moscow 116
Dallas 114
Columbus 103
Jakarta 98
São Paulo 85
Frankfurt am Main 82
Redwood City 80
Tokyo 80
Padova 79
Dublin 75
Atlanta 73
Munich 73
Guangzhou 72
Grafing 70
Taipei 65
Rome 63
Wallingford 62
Salt Lake City 61
Nanjing 60
Da Nang 58
Bengaluru 56
Toronto 54
Brooklyn 53
Bologna 51
Haiphong 51
Orem 51
Brussels 50
Dong Ket 46
Chennai 43
Warsaw 43
Washington 42
Tashkent 40
Baghdad 38
Denver 37
Paris 37
Rio de Janeiro 37
Reggio Emilia 36
Bremen 35
Phoenix 35
San Francisco 35
Johannesburg 34
Miano 34
Redondo Beach 34
Hsinchu 33
Parma 33
Norwalk 32
Changsha 31
Turin 31
Stockholm 30
Amsterdam 29
Tampa 29
Montreal 28
Jinan 27
Mexico City 27
Boston 26
Leawood 26
Duncan 25
Elk Grove Village 25
Totale 35.090
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Nome #
p-GaN/AlGaN/GaN Enhancement-Mode HEMTs 628
GaN-based power devices: Physics, reliability, and perspectives 599
The Role of Carbon Doping on Breakdown, Current Collapse and Dynamic On-Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates 408
Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements 380
A novel test methodology for RONand VTHmonitoring in GaN HEMTs during switch-mode operation 359
Experimental and Numerical Analysis of Hole Emission Process from Carbon-Related Traps in GaN Buffer Layers 353
Light sensitivity of current DLTS and its implications on the physics of DC-to-RF dispersion in AlGaAs-GaAs HFETs 339
Analytical Model for Power Switching GaN-Based HEMT Design 338
“Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs 331
N-polar GaN/AlGaN/GaN high electron mobility transistors 329
A comprehensive reliability evaluation of high-performance AlGaN/GaN HEMTs for space applications 326
Dependence of impact ionization and kink on surface-deep-level dynamics in AlGaAs/GaAs HFETs 324
Characterization and Numerical Simulations of High Power Field-Plated pHEMTs 324
A C-Band High-Dynamic Range GaN HEMT Low-Noise Amplifier 324
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs 323
Partial Recovery of Dynamic RON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs 322
False surface-trap signatures induced by buffer traps in AlGaN-GaN HEMTs 316
DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues 315
12 W/mm power density AlGaN/GaN HEMTs on sapphire substrate 313
Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs 313
Experimental and numerical investigation of Poole-Frenkel effect on dynamic RON transients in C-doped p-GaN HEMTs 312
Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements 311
Analysis of GaN HEMT Failure Mechanisms During DC and Large-Signal RF Operation 311
The Italian perspectives on the application of GaN technology in future SAR and RADAR systems 309
Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs 309
On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon‐Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs 307
Parasitic effects and long term stability of InP-based HEMTs 304
The influence of interface states at the Schottky junction on the large signal behavior of copper-gate GaN HEMTs 297
Selective dry etching of GaN over AlGaN in BCL3/SF6 mixtures 297
Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design 296
Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress 296
Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation 295
p-capped GaN-AlGaN-GaN high-electron mobility transistors (HEMTs) 295
Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs 294
TCAD optimization of field-plated InAlAs-InGaAs HEMTs 292
Study on the origin of dc-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs 291
Fabrication of novel high frequency and high breakdown InAlAs-InGaAs pHEMTs 291
Use of Double-Channel Heterostructures to Improve the Access Resistance and Linearity in GaN-Based HEMTs 290
High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates 289
Long Term Stability of InGaAs/AlInAs/GaAs Methamorphic HEMTs 289
Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics 289
Influence of properties of Si3N4 passivation layer on the electrical characteristics of Normally-off AlGaN/GaN HEMT 288
Power and Linearity Characteristics of Field-Plated Recessed-Gate AlGaN–GaN HEMTs 286
2.1 A/mm current density AlGaN/GaN HEMT 286
Traps localization and analysis in GaN HEMTs 285
Experimental and numerical correlation between current-collapse and fe-doping profiles in GaN HEMTs 284
A novel GaN HEMT degradation mechanism observed during HTST test 284
Unpassivated GaN/AlGaN/GaN Power High Electron Mobility Transistors with Dispersion Controlled by Epitaxial Layer Design 283
Field plate related reliability improvements in GaN-on-Si HEMTs 283
P-GaN/AlGaN/GaN high electron mobility transistors 282
An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters 281
High-power polarization-engineered GaN/AlGaN/GaN HEMTs without surface passivation 279
Experimental/numerical investigation on current collapse in AlGaN/GaN HEMT’s 279
Measurements of the InGaAs hole impact ionization coefficient in InAlAs/InGaAs pnp HBTs 277
Study of GaN HEMTs electrical degradation by means of numerical simulations 277
Trapping and High Field Related Issues in GaN Power HEMTs 276
Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs 274
Optimization of 0.25µm GaN HEMTs through numerical simulations 273
Correlation between DC and rf degradation due to deep levels in AlGaN/GaN HEMTs 273
Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes 273
Micro-power photovoltaic harvester based on a frequency-to-voltage MPPT tracker 272
Characterization of GaN-based metal--semiconductor field-effect transistors by comparing electroluminescence, photoionization, and cathodoluminescence spectroscopies 271
Hot-electron-stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on SiC 271
Mechanisms of RF Current Collapse in AlGaN–GaN High Electron Mobility Transistors 270
Influence of device self-heating on trap activation energy extraction 270
Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs 270
Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs 269
Experimental and Numerical Evaluation of RON Degradation in GaN HEMTs during Pulse-Mode Operation 268
Unpassivated p-GaN/AlGaN/GaN HEMTs with 7.1 W/mm at 10 GHz 265
Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias 262
Systematic characterization of Cl2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs 260
Evolution of on-resistance (RON) and threshold voltage (VTH) in GaN HEMTs during switch-mode operation 259
The effects of carbon on the bidirectional threshold voltage instabilities induced by negative gate bias stress in GaN MIS-HEMTs 259
Origin of etch delay time in Cl2 dry etching of AlGaN/GaN structures 257
Reliability issues of Gallium Nitride High Electron Mobility Transistors 257
Buffer traps in Fe-doped AlGaN/GaN HEMTs: Investigation of the physical properties based on pulsed and transient measurements 256
Insights into the off-state breakdown mechanisms in power GaN HEMTs 256
N-polar GaN epitaxy and high electron mobility transistors 255
AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction 254
Reliability aspects of GaN-HEMTs on composite substrates 253
Surface-related drain current dispersion effects in AlGaN-GaN HEMTs 250
Physical investigation of high-field degradation mechanisms in GaN/AlGaN/GaN hemts 249
High Linearity GaN HEMT Power Amplifier with Pre-Linearization Gate Diode 246
Deep levels characterization in GaN HEMTs - Part II: Experimental and numerical evaluation of self-heating effects on the extraction of traps activation energy 246
High electron mobility transistor and manufacturing method thereof 246
Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs 246
Correlation between dynamic Rdson transients and Carbon related buffer traps in AlGaN/GaN HEMTs 245
Very High Performance GaN HEMT devices by Optimized Buffer and Field Plate Technology 245
Boost-converter-based solar harvester for low power applications 244
Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs 244
Power and linearity characteristics of GaN MISFETs on sapphire substrate 242
Fabrication, Characterization and Numerical Simulation of High Breakdown Voltage pHEMTs 242
A novel degradation mechanism of AlGaN/GaN/Silicon heterostructures related to the generation of interface traps 240
Degradation of AlGaN/GaN Schottky diodes on silicon: Role of defects at the AlGaN/GaN interface 239
Analysis of self-oscillating switched-mode circuit for low-voltage energy harvesting 238
High linearity and high efficiency of class-B power amplifiers in GaN HEMT technology 238
单个或多个栅极场板的制造 238
GaN RF and GaN Power – Device Parameter Drifts Analysis 237
PARASITIC EFFECTS OF BUFFER DESIGN ON STATIC AND DYNAMIC PARAMETERS OF ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS 237
Analysis of High-Electric-Field Degradation in AlGaN/GaN HEMTs 236
Totale 28.953
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Categoria #
all - tutte 188.692
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 188.692
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20223.722 0 564 389 160 119 261 210 153 353 308 784 421
2022/20233.908 419 427 310 322 432 637 59 440 516 47 164 135
2023/20242.710 120 190 170 340 611 109 124 477 101 85 67 316
2024/20259.433 439 123 105 618 1.606 1.228 573 664 972 317 1.189 1.599
2025/202614.037 784 970 1.244 1.201 1.632 1.033 1.743 741 1.523 1.417 954 795
2026/20272.353 779 1.574 0 0 0 0 0 0 0 0 0 0
Totale 51.829