This paper presents a comprehensive review of AlGaN/GaN high electron mobility transistor failure physics and reliability, focusing on mechanisms affecting the gate-drain edge, where maximum electric field and peak temperatures are reached. Physical effects at the origin of device degradation (inverse piezoelectric effect, time-dependent trap formation and percolative conductive paths formation, and electrochemical AlGaN and GaN degradation) are discussed on the basis of literature data and unpublished results. Thermally activated mechanisms involving metal-metal and metal-semiconductor interdiffusion at the gate Schottky junction are also discussed.
AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction / Zanoni, E.; Meneghini, M.; Chini, Alessandro; Marcon, D.; Meneghesso, G.. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - STAMPA. - 60:10(2013), pp. 3119-3131. [10.1109/TED.2013.2271954]
AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction
CHINI, Alessandro;
2013
Abstract
This paper presents a comprehensive review of AlGaN/GaN high electron mobility transistor failure physics and reliability, focusing on mechanisms affecting the gate-drain edge, where maximum electric field and peak temperatures are reached. Physical effects at the origin of device degradation (inverse piezoelectric effect, time-dependent trap formation and percolative conductive paths formation, and electrochemical AlGaN and GaN degradation) are discussed on the basis of literature data and unpublished results. Thermally activated mechanisms involving metal-metal and metal-semiconductor interdiffusion at the gate Schottky junction are also discussed.File | Dimensione | Formato | |
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