This paper shows electrical characterizations and reliability analysis performed on AlGaN/GaN HEMTs processed on epitaxial layers grown on composite substrates. The results are very promising for the fabrication of low cost high power microwave transistors for wireless communication systems. The composite substrates constitute a valuable alternative to the silicon since better thermal properties are expected.
Reliability aspects of GaN-HEMTs on composite substrates / Zanon, F.; Danesin, F.; Tazzoli, A.; Meneghini, M.; Ronchi, N.; Chini, Alessandro; Bove, P.; Langer, R.; Zanoni, E.; Meneghesso, G.. - STAMPA. - (2008), pp. 23-30. (Intervento presentato al convegno 7th International Conference on Advanced Semiconductor Devices and Microsystems ASDAM ’08 tenutosi a Smolenice, Slovakia nel 12-16 Oct. 2008) [10.1109/ASDAM.2008.4743324].
Reliability aspects of GaN-HEMTs on composite substrates
CHINI, Alessandro;
2008
Abstract
This paper shows electrical characterizations and reliability analysis performed on AlGaN/GaN HEMTs processed on epitaxial layers grown on composite substrates. The results are very promising for the fabrication of low cost high power microwave transistors for wireless communication systems. The composite substrates constitute a valuable alternative to the silicon since better thermal properties are expected.
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