The long term stability of M-HEMTs has been evaluated by means of hot electrons stress test carried out at high ambient temperature. Devices demonstrate a good stability under high temperature thermal storage (T = 200 degreesC) or hot electron stress test at room temperature. Moreover, under very severe stress conditions (hot electron stress test at very high temperature), devices show large degradation in the I-V characteristics i.e. positive threshold voltage shift, a degradation of the gate Schottky diode, and increase of the parasitic drain resistance. The degradation are activated by both high temperature and high electric field.

Long Term Stability of InGaAs/AlInAs/GaAs Methamorphic HEMTs / Meneghesso, G.; Chini, Alessandro; Zanoni, E.. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - STAMPA. - 41:(2001), pp. 1579-1584. [10.1016/S0026-2714(01)00189-5]

Long Term Stability of InGaAs/AlInAs/GaAs Methamorphic HEMTs

CHINI, Alessandro;
2001

Abstract

The long term stability of M-HEMTs has been evaluated by means of hot electrons stress test carried out at high ambient temperature. Devices demonstrate a good stability under high temperature thermal storage (T = 200 degreesC) or hot electron stress test at room temperature. Moreover, under very severe stress conditions (hot electron stress test at very high temperature), devices show large degradation in the I-V characteristics i.e. positive threshold voltage shift, a degradation of the gate Schottky diode, and increase of the parasitic drain resistance. The degradation are activated by both high temperature and high electric field.
41
1579
1584
Long Term Stability of InGaAs/AlInAs/GaAs Methamorphic HEMTs / Meneghesso, G.; Chini, Alessandro; Zanoni, E.. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - STAMPA. - 41:(2001), pp. 1579-1584. [10.1016/S0026-2714(01)00189-5]
Meneghesso, G.; Chini, Alessandro; Zanoni, E.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/449838
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