The long term stability of M-HEMTs has been evaluated by means of hot electrons stress test carried out at high ambient temperature. Devices demonstrate a good stability under high temperature thermal storage (T = 200 degreesC) or hot electron stress test at room temperature. Moreover, under very severe stress conditions (hot electron stress test at very high temperature), devices show large degradation in the I-V characteristics i.e. positive threshold voltage shift, a degradation of the gate Schottky diode, and increase of the parasitic drain resistance. The degradation are activated by both high temperature and high electric field.
Long Term Stability of InGaAs/AlInAs/GaAs Methamorphic HEMTs / Meneghesso, G.; Chini, Alessandro; Zanoni, E.. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - STAMPA. - 41:9-10(2001), pp. 1579-1584. [10.1016/S0026-2714(01)00189-5]
Long Term Stability of InGaAs/AlInAs/GaAs Methamorphic HEMTs
CHINI, Alessandro;
2001
Abstract
The long term stability of M-HEMTs has been evaluated by means of hot electrons stress test carried out at high ambient temperature. Devices demonstrate a good stability under high temperature thermal storage (T = 200 degreesC) or hot electron stress test at room temperature. Moreover, under very severe stress conditions (hot electron stress test at very high temperature), devices show large degradation in the I-V characteristics i.e. positive threshold voltage shift, a degradation of the gate Schottky diode, and increase of the parasitic drain resistance. The degradation are activated by both high temperature and high electric field.
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