A high linearity MMIC RF power amplifier is reported in the AlGaN/GaN HEMT technology. In order to obtain high linearity, a pre-linearization gate diode is added at the input to compensate for the nonlinear input capacitance C/sub gs/ of the GaN HEMT device. Another single-ended class B power amplifier without the gate diode is also designed for comparison. The circuit with the pre-linearization gate diode demonstrates at least 4dB improvement on 3rd order intermodulation distortion (IMD/sub 3/) performance over the one without the diode over the useful power range in two-tone measurement.
High Linearity GaN HEMT Power Amplifier with Pre-Linearization Gate Diode / S., Xie; V., Paidi; S., Heikman; Chini, Alessandro; U., Mishra; S., Long; M. J. W., Rodwell. - ELETTRONICO. - (2004), pp. 223-228. (Intervento presentato al convegno IEEE Lester Eastman Conference on High Performance Devices tenutosi a Rensselaer Polytechnic Institute, CII, Troy, NY 12180 (USA) nel August 4-6, 2004) [10.1109/LECHPD.2004.1549698].
High Linearity GaN HEMT Power Amplifier with Pre-Linearization Gate Diode
CHINI, Alessandro;
2004
Abstract
A high linearity MMIC RF power amplifier is reported in the AlGaN/GaN HEMT technology. In order to obtain high linearity, a pre-linearization gate diode is added at the input to compensate for the nonlinear input capacitance C/sub gs/ of the GaN HEMT device. Another single-ended class B power amplifier without the gate diode is also designed for comparison. The circuit with the pre-linearization gate diode demonstrates at least 4dB improvement on 3rd order intermodulation distortion (IMD/sub 3/) performance over the one without the diode over the useful power range in two-tone measurement.
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