Record power performance at 4 GHz has been obtained using field-plated AlGaN/GaN HEMTs on sapphire substrate. High power density (12 W/mm) as well as high efficiency (58%) have been measured. A comparison between devices with and without field plate on the same sample showed a significant reduction in knee-voltage walk-out for the field-plated device, thus enabling high power and efficiency operation.
12 W/mm power density AlGaN/GaN HEMTs on sapphire substrate / Chini, Alessandro; Buttari, D.; Coffie, R.; Heikman, S.; Keller, S.; Mishra, U. K.. - In: ELECTRONICS LETTERS. - ISSN 0013-5194. - STAMPA. - 40:1(2004), pp. 73-74. [10.1049/el:20040017]
12 W/mm power density AlGaN/GaN HEMTs on sapphire substrate
CHINI, Alessandro;
2004
Abstract
Record power performance at 4 GHz has been obtained using field-plated AlGaN/GaN HEMTs on sapphire substrate. High power density (12 W/mm) as well as high efficiency (58%) have been measured. A comparison between devices with and without field plate on the same sample showed a significant reduction in knee-voltage walk-out for the field-plated device, thus enabling high power and efficiency operation.
Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris
