In this paper a comparison between two samples with two different SiN passivation layers was performed. An increment of the drain leakage current increasing the Si concentration in the SiN layer was observed. On the other hand, a similar behavior of dynamic RON was recorded. T-CAD simulations supported our hypothesis on the factors that cause parametric yield loss.
Influence of properties of Si3N4 passivation layer on the electrical characteristics of Normally-off AlGaN/GaN HEMT / Iucolano, F.; Miccoli, C.; Nicotra, M.; Stocco, A.; Rampazzo, F.; Zanandrea, A.; Cinnera, M. V.; Patti, A.; Rinaudo, S.; Soci, Fabio; Chini, Alessandro; Zanoni, E.; Meneghesso, G.. - ELETTRONICO. - (2013), pp. 162-165. (Intervento presentato al convegno 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 tenutosi a Columbus, OH (USA) nel 27-29 October 2013) [10.1109/WiPDA.2013.6695587].
Influence of properties of Si3N4 passivation layer on the electrical characteristics of Normally-off AlGaN/GaN HEMT
SOCI, FABIO;CHINI, Alessandro;
2013
Abstract
In this paper a comparison between two samples with two different SiN passivation layers was performed. An increment of the drain leakage current increasing the Si concentration in the SiN layer was observed. On the other hand, a similar behavior of dynamic RON was recorded. T-CAD simulations supported our hypothesis on the factors that cause parametric yield loss.
Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris
