In this paper a comparison between two samples with two different SiN passivation layers was performed. An increment of the drain leakage current increasing the Si concentration in the SiN layer was observed. On the other hand, a similar behavior of dynamic RON was recorded. T-CAD simulations supported our hypothesis on the factors that cause parametric yield loss.

Influence of properties of Si3N4 passivation layer on the electrical characteristics of Normally-off AlGaN/GaN HEMT / Iucolano, F.; Miccoli, C.; Nicotra, M.; Stocco, A.; Rampazzo, F.; Zanandrea, A.; Cinnera, M. V.; Patti, A.; Rinaudo, S.; Soci, Fabio; Chini, Alessandro; Zanoni, E.; Meneghesso, G.. - ELETTRONICO. - (2013), pp. 162-165. ((Intervento presentato al convegno 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 tenutosi a Columbus, OH (USA) nel 27-29 October 2013 [10.1109/WiPDA.2013.6695587].

Influence of properties of Si3N4 passivation layer on the electrical characteristics of Normally-off AlGaN/GaN HEMT

SOCI, FABIO;CHINI, Alessandro;
2013

Abstract

In this paper a comparison between two samples with two different SiN passivation layers was performed. An increment of the drain leakage current increasing the Si concentration in the SiN layer was observed. On the other hand, a similar behavior of dynamic RON was recorded. T-CAD simulations supported our hypothesis on the factors that cause parametric yield loss.
1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013
Columbus, OH (USA)
27-29 October 2013
162
165
Iucolano, F.; Miccoli, C.; Nicotra, M.; Stocco, A.; Rampazzo, F.; Zanandrea, A.; Cinnera, M. V.; Patti, A.; Rinaudo, S.; Soci, Fabio; Chini, Alessandro; Zanoni, E.; Meneghesso, G.
Influence of properties of Si3N4 passivation layer on the electrical characteristics of Normally-off AlGaN/GaN HEMT / Iucolano, F.; Miccoli, C.; Nicotra, M.; Stocco, A.; Rampazzo, F.; Zanandrea, A.; Cinnera, M. V.; Patti, A.; Rinaudo, S.; Soci, Fabio; Chini, Alessandro; Zanoni, E.; Meneghesso, G.. - ELETTRONICO. - (2013), pp. 162-165. ((Intervento presentato al convegno 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 tenutosi a Columbus, OH (USA) nel 27-29 October 2013 [10.1109/WiPDA.2013.6695587].
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/1076998
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