Results obtained by current-DLTS measurements on GaN-based HEMTs are presented. It is shown that device self-heating can significantly influence the extraction of trap ionization energy leading to a large underestimation of the latter.
Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement / Chini, Alessandro; Esposto, Michele; Bonaiuti, Matteo; Verzellesi, Giovanni; Zanon, F.; Zanoni, E.; Meneghesso, G.. - STAMPA. - (2008), pp. 49-50. (Intervento presentato al convegno 17th European Heterostructure Technology Workshop, HETECH 2008 tenutosi a Venezia (Italy) nel 2-5 Nov. 2008).
Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement
CHINI, Alessandro;ESPOSTO, Michele;BONAIUTI, Matteo;VERZELLESI, Giovanni;
2008
Abstract
Results obtained by current-DLTS measurements on GaN-based HEMTs are presented. It is shown that device self-heating can significantly influence the extraction of trap ionization energy leading to a large underestimation of the latter.
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