This paper reviews the progress of N-polar (000 1) GaN high frequency electronics that aims at addressing the device scaling challenges faced by GaN high electron mobility transistors (HEMTs) for radio-frequency and mixed-signal applications. Device quality (Al, In, Ga)N materials for N-polar heterostructures are developed using molecular beam epitaxy and metalorganic chemical vapor deposition. The principles of polarization engineering for designing N-polar HEMT structures will be outlined. The performance, scaling behavior and challenges of microwave power devices as well as highly-scaled depletion- and enhancement-mode devices employing advanced technologies including self-aligned processes, n+ (In,Ga)N ohmic contact regrowth and high aspect ratio T-gates will be discussed. Recent research results on integrating N-polar GaN with Si for prospective novel applications will also be summarized.

N-polar GaN epitaxy and high electron mobility transistors / Wong, M. H.; Keller, S.; Dasgupta, N. S.; Denninghoff, D. J.; Kolluri, S.; Brown, D. F.; Lu, J.; Fichtenbaum, N. A.; Ahmadi, E.; Singisetti, U.; Chini, Alessandro; Rajan, S.; Denbaars, S. P.; Speck, J. S.; Mishra, U. K.. - In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. - ISSN 0268-1242. - STAMPA. - 28(7)(2013), pp. 074009-1-074009-22. [10.1088/0268-1242/28/7/074009]

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