The GaN high-electron mobility transistor (HEMT) structure has been widely investigated, particularly for radio-frequency applications. This structure is suitable for high-frequency switching applications in power electronics because of the high breakdown field of GaN and the high mobility of the channel. In this paper, a physical model for predicting the power-switching operation of GaN-based HEMTs as a function of material and device parameters is proposed. Analytical equations for total losses and power dissipation density are derived and discussed both qualitatively and quantitatively.
Analytical Model for Power Switching GaN-Based HEMT Design / Esposto, Michele; Chini, Alessandro; Rajan, S.. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - STAMPA. - 58:5(2011), pp. 1456-1461. [10.1109/TED.2011.2112771]
Analytical Model for Power Switching GaN-Based HEMT Design
ESPOSTO, Michele;CHINI, Alessandro;
2011
Abstract
The GaN high-electron mobility transistor (HEMT) structure has been widely investigated, particularly for radio-frequency applications. This structure is suitable for high-frequency switching applications in power electronics because of the high breakdown field of GaN and the high mobility of the channel. In this paper, a physical model for predicting the power-switching operation of GaN-based HEMTs as a function of material and device parameters is proposed. Analytical equations for total losses and power dissipation density are derived and discussed both qualitatively and quantitatively.
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