Dynamic Ron dispersion due to buffer traps is a well-known issue of GaN power high electron mobility transistors (HEMTs), critically impacting their performance and stability. Several works show that the dynamic Ron reaches a maximum for some off-state drain-source voltage ( VDS,off ) value typically in the range of several hundred volts and then partially recovers to smaller values. In this work, we propose a quantitative explanation for this behavior, attributing it to the charging/discharging dynamics of carbon (C)-related buffer traps. We characterize the dynamic Ron in packaged p-GaN gate AlGaN/GaN HEMTs with a custom measurement setup. We find that in these devices, the relative Ron increase reaches a maximum of 60% for VDS,off≈100 -200 V, partially recovering to about 30% as VDS,off is raised to 500 V. We ascribe this behavior to the partial neutralization of C-related acceptor traps in the buffer due to trapping of holes produced by a high-field generation mechanism. This explanation is supported by calibrated 2-D numerical simulations, that successfully reproduce the experimentally observed Ron reduction only when including a hole generation mechanism.

Partial Recovery of Dynamic RON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs / Cioni, Marcello; Zagni, Nicolo; Iucolano, Ferdinando; Moschetti, Maurizio; Verzellesi, Giovanni; Chini, Alessandro. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 68:10(2021), pp. 4862-4868. [10.1109/TED.2021.3105075]

Partial Recovery of Dynamic RON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs

Cioni, Marcello;Zagni, Nicolo
;
Verzellesi, Giovanni;Chini, Alessandro
2021

Abstract

Dynamic Ron dispersion due to buffer traps is a well-known issue of GaN power high electron mobility transistors (HEMTs), critically impacting their performance and stability. Several works show that the dynamic Ron reaches a maximum for some off-state drain-source voltage ( VDS,off ) value typically in the range of several hundred volts and then partially recovers to smaller values. In this work, we propose a quantitative explanation for this behavior, attributing it to the charging/discharging dynamics of carbon (C)-related buffer traps. We characterize the dynamic Ron in packaged p-GaN gate AlGaN/GaN HEMTs with a custom measurement setup. We find that in these devices, the relative Ron increase reaches a maximum of 60% for VDS,off≈100 -200 V, partially recovering to about 30% as VDS,off is raised to 500 V. We ascribe this behavior to the partial neutralization of C-related acceptor traps in the buffer due to trapping of holes produced by a high-field generation mechanism. This explanation is supported by calibrated 2-D numerical simulations, that successfully reproduce the experimentally observed Ron reduction only when including a hole generation mechanism.
2021
25-ago-2021
68
10
4862
4868
Partial Recovery of Dynamic RON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs / Cioni, Marcello; Zagni, Nicolo; Iucolano, Ferdinando; Moschetti, Maurizio; Verzellesi, Giovanni; Chini, Alessandro. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 68:10(2021), pp. 4862-4868. [10.1109/TED.2021.3105075]
Cioni, Marcello; Zagni, Nicolo; Iucolano, Ferdinando; Moschetti, Maurizio; Verzellesi, Giovanni; Chini, Alessandro
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1252117
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