The etch delay time commonly found during dry etching of AlGaN and GaN has been experimentally proven to be due to the presence of hard–to–etch surface oxides. A BCl3 deoxidizing plasma, followed by a Cl2 etching plasma, was found to give dead-time-free aluminum-mole-fraction-independent etch rates. No selectivity between GaN and AlGaN has been observed up to an aluminum mole fraction of 35%. The aluminum-mole-fraction-dependent etch rates commonly reported in literature have been related to the different dead-times associated with dissimilar surface oxides, disproving the more common explanations in terms of the higher binding energy of AlN compared to GaN and/or the lower volatility of AlClx compared to GaClx.
Origin of etch delay time in Cl2 dry etching of AlGaN/GaN structures / Buttari, D.; Chini, Alessandro; Palacios, T.; Coffie, R.; Shen, L.; Xing, H.; Heikman, S.; McCarthy, L.; Chakraborty, A.; Keller, S.; Mishra, U. K.. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 83:23(2003), pp. 4779-4781. [10.1063/1.1632035]
Origin of etch delay time in Cl2 dry etching of AlGaN/GaN structures
CHINI, Alessandro;
2003
Abstract
The etch delay time commonly found during dry etching of AlGaN and GaN has been experimentally proven to be due to the presence of hard–to–etch surface oxides. A BCl3 deoxidizing plasma, followed by a Cl2 etching plasma, was found to give dead-time-free aluminum-mole-fraction-independent etch rates. No selectivity between GaN and AlGaN has been observed up to an aluminum mole fraction of 35%. The aluminum-mole-fraction-dependent etch rates commonly reported in literature have been related to the different dead-times associated with dissimilar surface oxides, disproving the more common explanations in terms of the higher binding energy of AlN compared to GaN and/or the lower volatility of AlClx compared to GaClx.Pubblicazioni consigliate
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