The maximum drain current (Imax) reduction after high temperature short term (HTST) tests in RF-GaN HEMT was investigated. A “critical-voltage” like degradation was observed with voltage levels correlated with the pinch-off voltage of the MIS structure formed by the device field-plate terminal (FP). The recoverable nature of the observed phenomena and the positive temperature dependence of both the Imax reduction and leakage currents within the passivation layer allowed us to propose a novel interpretation based on a charge-injection process from the FP into SiN/AlGaN electrons trap within the device gate-drain access region.
A novel GaN HEMT degradation mechanism observed during HTST test / Iucolano, F.; Parisi, A.; Reina, S.; Chini, A.. - (2018). (Intervento presentato al convegno IEEE International Reliability Physics Symposium (IRPS) tenutosi a Burlingame, California, USA nel March 11-15, 2018) [10.1109/IRPS.2018.8353707].
A novel GaN HEMT degradation mechanism observed during HTST test
A. Chini
2018
Abstract
The maximum drain current (Imax) reduction after high temperature short term (HTST) tests in RF-GaN HEMT was investigated. A “critical-voltage” like degradation was observed with voltage levels correlated with the pinch-off voltage of the MIS structure formed by the device field-plate terminal (FP). The recoverable nature of the observed phenomena and the positive temperature dependence of both the Imax reduction and leakage currents within the passivation layer allowed us to propose a novel interpretation based on a charge-injection process from the FP into SiN/AlGaN electrons trap within the device gate-drain access region.File | Dimensione | Formato | |
---|---|---|---|
Paper-IRPS_Chini_2018_2.pdf
Accesso riservato
Tipologia:
Abstract
Dimensione
941.98 kB
Formato
Adobe PDF
|
941.98 kB | Adobe PDF | Visualizza/Apri Richiedi una copia |
Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris