The effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs have been studied by means of static and dynamic I-V measurements, drain-current transient spectroscopy, XRD, and RF stress tests. Devices equipped with C-doped and Fe-doped GaN buffer feature improved subthreshold behaviour (lower source-to-drain leakage current, and lower DIBL) and improved RF reliability. As a drawback, devices equipped with Fe- and C-doping experience higher dynamic current dispersion, ascribed to higher concentration of the deep levels E2 (0.56 eV/10- 15 cm2) and E4 (0.84 eV/10- 14 cm2).
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs / Bisi, D.; Stocco, A.; Rossetto, I.; Meneghini, M.; Rampazzo, F.; Chini, Alessandro; Soci, Fabio; Pantellini, A.; Lanzieri, C.; Gamarra, P.; Lacam, C.; Tordjman, M.; Di Forte Poisson, M. A.; De Salvador, D.; Bazzan, M.; Meneghesso, G.; Zanoni, E.. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - STAMPA. - 55:9-10(2015), pp. 1662-1666. [10.1016/j.microrel.2015.06.038]
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs
CHINI, Alessandro;SOCI, FABIO;
2015
Abstract
The effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs have been studied by means of static and dynamic I-V measurements, drain-current transient spectroscopy, XRD, and RF stress tests. Devices equipped with C-doped and Fe-doped GaN buffer feature improved subthreshold behaviour (lower source-to-drain leakage current, and lower DIBL) and improved RF reliability. As a drawback, devices equipped with Fe- and C-doping experience higher dynamic current dispersion, ascribed to higher concentration of the deep levels E2 (0.56 eV/10- 15 cm2) and E4 (0.84 eV/10- 14 cm2).
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