Although GaN devices are expected to provide great advantages in RF- and Power applications, they often suffer from trap related parameter instabilities. Results obtained on the analysis of the RF-gain collapse phenomena observed in GaN-on-SiC devices will be presented. Furthermore, a dedicated measurement setup for the monitoring of VTH and RON drifts during switch-mode operation of normally-off GaN-on-Si devices will be proposed and the experimental results obtained will be discussed.
GaN RF and GaN Power – Device Parameter Drifts Analysis / Chini, Alessandro. - (2018). (Intervento presentato al convegno Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE 2108) tenutosi a BUCHAREST, ROMANIA nel 14-16 MAY 2018).
GaN RF and GaN Power – Device Parameter Drifts Analysis
Alessandro Chini
2018-01-01
Abstract
Although GaN devices are expected to provide great advantages in RF- and Power applications, they often suffer from trap related parameter instabilities. Results obtained on the analysis of the RF-gain collapse phenomena observed in GaN-on-SiC devices will be presented. Furthermore, a dedicated measurement setup for the monitoring of VTH and RON drifts during switch-mode operation of normally-off GaN-on-Si devices will be proposed and the experimental results obtained will be discussed.
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