A novel gate process utilising SiO2 to cover the recess sidewall on the drain side of a p-GaN/AlGaN/GaN high electron mobility transistor is presented. Improvements in breakdown voltage and output power are demonstrated with no degradation in small-signal performance.
Unpassivated p-GaN/AlGaN/GaN HEMTs with 7.1 W/mm at 10 GHz / Coffie, R.; Shen, L.; Parish, G.; Chini, Alessandro; Buttari, D.; Heikman, S.; Keller, S.; Mishra, U. K.. - In: ELECTRONICS LETTERS. - ISSN 0013-5194. - STAMPA. - 39:19(2003), pp. 1419-1420. [10.1049/el:20030872]
Unpassivated p-GaN/AlGaN/GaN HEMTs with 7.1 W/mm at 10 GHz
CHINI, Alessandro;
2003
Abstract
A novel gate process utilising SiO2 to cover the recess sidewall on the drain side of a p-GaN/AlGaN/GaN high electron mobility transistor is presented. Improvements in breakdown voltage and output power are demonstrated with no degradation in small-signal performance.
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