We describe the development of N-polar GaN-based high electron mobility transistors grown by N2 plasma-assisted molecular beam epitaxy on C-face SiC substrates. High mobility AlGaN/GaN modulation-doped two-dimensional electron gas channels were grown, and transistors with excellent dc and small-signal performance were fabricated on these wafers. Large-signal dispersion was observed, and the trap states responsible for this were identified, and layer designs to remove the dispersive effects of these traps were demonstrated. Finally, an AlGaN-cap layer was used to reduce gate leakage in these devices, and a low-dispersion high breakdown voltage device was achieved. This detailed study of dispersion and leakage in N-polar GaN-based transistors establishes a technological base for further development of field effect devices based on N-polar III-nitrides.
|Data di pubblicazione:||2007|
|Titolo:||N-polar GaN/AlGaN/GaN high electron mobility transistors|
|Autori:||Rajan, S.; Chini, Alessandro; Wong, M. H.; Speck, J. S.; Mishra, U. K.|
|Digital Object Identifier (DOI):||10.1063/1.2769950|
|Appare nelle tipologie:||Articolo su rivista|
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