We describe the development of N-polar GaN-based high electron mobility transistors grown by N2 plasma-assisted molecular beam epitaxy on C-face SiC substrates. High mobility AlGaN/GaN modulation-doped two-dimensional electron gas channels were grown, and transistors with excellent dc and small-signal performance were fabricated on these wafers. Large-signal dispersion was observed, and the trap states responsible for this were identified, and layer designs to remove the dispersive effects of these traps were demonstrated. Finally, an AlGaN-cap layer was used to reduce gate leakage in these devices, and a low-dispersion high breakdown voltage device was achieved. This detailed study of dispersion and leakage in N-polar GaN-based transistors establishes a technological base for further development of field effect devices based on N-polar III-nitrides.

N-polar GaN/AlGaN/GaN high electron mobility transistors / Rajan, S.; Chini, Alessandro; Wong, M. H.; Speck, J. S.; Mishra, U. K.. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - STAMPA. - 102(4):(2007), pp. 044501-1-044501-6. [10.1063/1.2769950]

N-polar GaN/AlGaN/GaN high electron mobility transistors

CHINI, Alessandro;
2007

Abstract

We describe the development of N-polar GaN-based high electron mobility transistors grown by N2 plasma-assisted molecular beam epitaxy on C-face SiC substrates. High mobility AlGaN/GaN modulation-doped two-dimensional electron gas channels were grown, and transistors with excellent dc and small-signal performance were fabricated on these wafers. Large-signal dispersion was observed, and the trap states responsible for this were identified, and layer designs to remove the dispersive effects of these traps were demonstrated. Finally, an AlGaN-cap layer was used to reduce gate leakage in these devices, and a low-dispersion high breakdown voltage device was achieved. This detailed study of dispersion and leakage in N-polar GaN-based transistors establishes a technological base for further development of field effect devices based on N-polar III-nitrides.
2007
102(4)
044501-1
044501-6
N-polar GaN/AlGaN/GaN high electron mobility transistors / Rajan, S.; Chini, Alessandro; Wong, M. H.; Speck, J. S.; Mishra, U. K.. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - STAMPA. - 102(4):(2007), pp. 044501-1-044501-6. [10.1063/1.2769950]
Rajan, S.; Chini, Alessandro; Wong, M. H.; Speck, J. S.; Mishra, U. K.
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/583832
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 215
  • ???jsp.display-item.citation.isi??? 193
social impact