In this work, for the first time, the dependence of the GaN HEMTs current collapse from the profile of the Fe-doped semi-insulating GaN buffers has been demonstrated both experimentally and by means of numerical simulations based on the SIMS measured profile of the GaN buffer Fe-doping concentration.
Experimental and numerical correlation between current-collapse and fe-doping profiles in GaN HEMTs / Chini, Alessandro; DI LECCE, Valerio; Soci, Fabio; D., Bisi; A., Stocco; M., Meneghini; G., Meneghesso; E., Zanoni; A., Gasparotto. - STAMPA. - (2012), pp. CD.2.1-CD.2.4. (Intervento presentato al convegno 2012 IEEE International Reliability Physics Symposium, IRPS 2012 tenutosi a Anaheim, CA, USA nel 15-19 April 2012) [10.1109/IRPS.2012.6241881].
Experimental and numerical correlation between current-collapse and fe-doping profiles in GaN HEMTs
CHINI, Alessandro;DI LECCE, Valerio;SOCI, FABIO;
2012
Abstract
In this work, for the first time, the dependence of the GaN HEMTs current collapse from the profile of the Fe-doped semi-insulating GaN buffers has been demonstrated both experimentally and by means of numerical simulations based on the SIMS measured profile of the GaN buffer Fe-doping concentration.
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