In this paper, a high-power GaN/AlGaN/GaN high electron mobility transistor (HEMT) has been demonstrated. A thick cap layer has been used to screen surface states and reduce dispersion. A deep gate recess was used to achieve the desired transconductance. A thin SiO2 layer was deposited on the drain side of the gate recess in order to reduce gate leakage current and improve breakdown voltage. No surface passivation layer was used. A breakdown voltage of 90 V was achieved. A record output power density of 12 W/mm with an associated power-added efficiency (PAE) of 40.5% was measured at 10 GHz. These results demonstrate the potential of the technique as a controllable and repeatable solution to decrease dispersion and produce power from GaN-based HEMTs without surface passivation.

High-power polarization-engineered GaN/AlGaN/GaN HEMTs without surface passivation / Shen, L.; Coffie, R.; Buttari, D.; Heikman, S.; Chakraborty, A.; Chini, Alessandro; Keller, S.; Denbaars, S. P.; Mishra, U. K.. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - STAMPA. - 25(1):(2004), pp. 7-9. [10.1109/LED.2003.821673]

High-power polarization-engineered GaN/AlGaN/GaN HEMTs without surface passivation

CHINI, Alessandro;
2004

Abstract

In this paper, a high-power GaN/AlGaN/GaN high electron mobility transistor (HEMT) has been demonstrated. A thick cap layer has been used to screen surface states and reduce dispersion. A deep gate recess was used to achieve the desired transconductance. A thin SiO2 layer was deposited on the drain side of the gate recess in order to reduce gate leakage current and improve breakdown voltage. No surface passivation layer was used. A breakdown voltage of 90 V was achieved. A record output power density of 12 W/mm with an associated power-added efficiency (PAE) of 40.5% was measured at 10 GHz. These results demonstrate the potential of the technique as a controllable and repeatable solution to decrease dispersion and produce power from GaN-based HEMTs without surface passivation.
25(1)
7
9
High-power polarization-engineered GaN/AlGaN/GaN HEMTs without surface passivation / Shen, L.; Coffie, R.; Buttari, D.; Heikman, S.; Chakraborty, A.; Chini, Alessandro; Keller, S.; Denbaars, S. P.; Mishra, U. K.. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - STAMPA. - 25(1):(2004), pp. 7-9. [10.1109/LED.2003.821673]
Shen, L.; Coffie, R.; Buttari, D.; Heikman, S.; Chakraborty, A.; Chini, Alessandro; Keller, S.; Denbaars, S. P.; Mishra, U. K.
File in questo prodotto:
File Dimensione Formato  
EDL-JAN-04-01264097.pdf

non disponibili

Tipologia: Versione dell'editore (versione pubblicata)
Dimensione 134.16 kB
Formato Adobe PDF
134.16 kB Adobe PDF   Visualizza/Apri   Richiedi una copia
Pubblicazioni consigliate

Caricamento pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/449822
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 103
  • ???jsp.display-item.citation.isi??? 83
social impact