A study of InP based HEMTs implemented with different process options will be reported. It will be demonstrated that devices with an InP etch stopper layer or with a narrow lateral gate recess region do not present any kink effect, neither any transconductance frequency dispersion, g(m)(f) and a stable behavior with respect to hot electron aging is observed. The opposite occurs in devices without the InP etch stopper layer and a wide lateral gate recess region. The data presented confirm the effectiveness of an InP passivating layer in improving the reliability of advanced InP-HEMTs, and point out at the free InAlAs surface as responsible for the observed instabilities (kink effects, g(m)(f) dispersion).
Parasitic effects and long term stability of InP-based HEMTs / Meneghesso, G.; Luise, R.; Buttari, D.; Chini, Alessandro; Yokoyama, H.; Suemitsu, T.; Zanoni, E.. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - STAMPA. - 40:8-10(2000), pp. 1715-1720. [10.1016/S0026-2714(00)00168-2]
Parasitic effects and long term stability of InP-based HEMTs
CHINI, Alessandro;
2000
Abstract
A study of InP based HEMTs implemented with different process options will be reported. It will be demonstrated that devices with an InP etch stopper layer or with a narrow lateral gate recess region do not present any kink effect, neither any transconductance frequency dispersion, g(m)(f) and a stable behavior with respect to hot electron aging is observed. The opposite occurs in devices without the InP etch stopper layer and a wide lateral gate recess region. The data presented confirm the effectiveness of an InP passivating layer in improving the reliability of advanced InP-HEMTs, and point out at the free InAlAs surface as responsible for the observed instabilities (kink effects, g(m)(f) dispersion).
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