Inductively coupled plasma (ICP) etching of GaN with high selectivity over Al.22Ga.78N in BCl3/SF6 mixtures has been studied. Selectivity and surface morphology were investigated over a wide range of pressures (3.75-37.5mTorr), RF powers (30-120 W), ICP powers (100-400 W), and SF6/BCl3 ratios (0.1-0.7). Higher pressures, lower dc biases, and higher SF6/BCl3 ratios increased the GaN to AlGaN selectivity. Selectivities up to 25 were measured by laser interferometry. A root mean square (rms) surface roughness of 0.67 nm was measured by atomic force microscopy (AFM) after removal of 0.5 μm from a GaN template (process selectivity: 15, as-grown rms surface roughness: 0.56 nm). A degradation in surface morphology, with the gradual formation of pits, was observed for selectivities above 10.
Selective dry etching of GaN over AlGaN in BCL3/SF6 mixtures / Buttari, D; Chini, Alessandro; Chakraborty, A.; Mccarthy, L.; Xing, H.; Palacios, T.; Shen, L.; Keller, S.; Mishra, U. K.. - In: INTERNATIONAL JOURNAL OF HIGH SPEED ELECTRONICS. - ISSN 0129-1564. - 14:3(2004), pp. 756-761. [10.1142/S012915640400279X]
Selective dry etching of GaN over AlGaN in BCL3/SF6 mixtures
CHINI, Alessandro;
2004
Abstract
Inductively coupled plasma (ICP) etching of GaN with high selectivity over Al.22Ga.78N in BCl3/SF6 mixtures has been studied. Selectivity and surface morphology were investigated over a wide range of pressures (3.75-37.5mTorr), RF powers (30-120 W), ICP powers (100-400 W), and SF6/BCl3 ratios (0.1-0.7). Higher pressures, lower dc biases, and higher SF6/BCl3 ratios increased the GaN to AlGaN selectivity. Selectivities up to 25 were measured by laser interferometry. A root mean square (rms) surface roughness of 0.67 nm was measured by atomic force microscopy (AFM) after removal of 0.5 μm from a GaN template (process selectivity: 15, as-grown rms surface roughness: 0.56 nm). A degradation in surface morphology, with the gradual formation of pits, was observed for selectivities above 10.Pubblicazioni consigliate
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