| Nome |
# |
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“Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs, file e31e124e-b611-987f-e053-3705fe0a095a
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496
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Partial Recovery of Dynamic RON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs, file e31e124f-c2d7-987f-e053-3705fe0a095a
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431
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The effects of carbon on the bidirectional threshold voltage instabilities induced by negative gate bias stress in GaN MIS-HEMTs, file e31e124e-5629-987f-e053-3705fe0a095a
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325
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The Role of Carbon Doping on Breakdown, Current Collapse and Dynamic On-Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates, file e31e124d-e2a6-987f-e053-3705fe0a095a
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322
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Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs, file e31e124f-8157-987f-e053-3705fe0a095a
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272
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Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs, file e31e124f-2683-987f-e053-3705fe0a095a
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264
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Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs, file e31e124f-9855-987f-e053-3705fe0a095a
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234
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Experimental and Numerical Evaluation of RON Degradation in GaN HEMTs during Pulse-Mode Operation, file e31e124d-2bb7-987f-e053-3705fe0a095a
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211
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Insights into the off-state breakdown mechanisms in power GaN HEMTs, file e31e124f-c08c-987f-e053-3705fe0a095a
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208
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GaN-based power devices: Physics, reliability, and perspectives, file e31e124f-b78c-987f-e053-3705fe0a095a
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169
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Reliability Investigation of GaN HEMTs for MMICs Applications, file e31e124a-ffd7-987f-e053-3705fe0a095a
|
149
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Experimental and Numerical Analysis of Hole Emission Process from Carbon-Related Traps in GaN Buffer Layers, file e31e124e-9894-987f-e053-3705fe0a095a
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130
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On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon‐Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs, file e31e124f-9c3a-987f-e053-3705fe0a095a
|
104
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Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design, file e31e124e-98a2-987f-e053-3705fe0a095a
|
95
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단일 또는 다중 게이트 필드 플레이트의 제조, file e31e124d-7758-987f-e053-3705fe0a095a
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57
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シングルゲートまたはマルチゲートフィールドプレート製造, file e31e124e-91a2-987f-e053-3705fe0a095a
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51
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單一或多重閘極場平板之製造, file e31e124e-6b44-987f-e053-3705fe0a095a
|
47
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HEMT transistor with high stress resilience during off state and manufacturing method thereof, file e31e124e-919e-987f-e053-3705fe0a095a
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46
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双沟道hemt器件及其制造方法, file e31e124e-3ad6-987f-e053-3705fe0a095a
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44
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Enhancement/depletion PHEMT device, file e31e124d-7e36-987f-e053-3705fe0a095a
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43
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常关断型hemt晶体管以及对应的制造方法, file e31e124d-f739-987f-e053-3705fe0a095a
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43
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高电子迁移率晶体管hemt器件, file e31e124d-7761-987f-e053-3705fe0a095a
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42
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High electron mobility transistor and manufacturing method thereof, file e31e124e-91a0-987f-e053-3705fe0a095a
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42
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单个或多个栅极场板的制造, file e31e124d-775a-987f-e053-3705fe0a095a
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41
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高电子迁移率晶体管, file e31e124e-3913-987f-e053-3705fe0a095a
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41
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在断态期间具有高应力顺应性的hemt晶体管及其制造方法, file e31e124e-3915-987f-e053-3705fe0a095a
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41
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GaN-based power devices: Physics, reliability, and perspectives, file 6dbdc7f3-fdb2-4bcb-9d04-dd1978d7f13e
|
40
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|
HEMT transistor of the normally off type including a trench containing a gate region and forming at least one step, and corresponding manufacturing method, file e31e124d-fbb3-987f-e053-3705fe0a095a
|
40
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Experimental and numerical investigation of Poole-Frenkel effect on dynamic RON transients in C-doped p-GaN HEMTs, file e31e124f-91d2-987f-e053-3705fe0a095a
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39
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Enhancement-/depletion-PHEMT device and manufacturing method thereof, file e31e124d-775d-987f-e053-3705fe0a095a
|
37
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常关断型hemt晶体管, file e31e124d-f6c0-987f-e053-3705fe0a095a
|
35
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Failure Physics and Reliability of GaN-Based HEMTs for Microwave and Millimeter-Wave Applications: A Review of Consolidated Data and Recent Results, file 70da4a3a-c9b4-480b-8940-67b7a3aa7321
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34
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Hemt transistor including field plate regions and manufacturing process thereof, file e31e124f-8cb8-987f-e053-3705fe0a095a
|
34
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Double-channel HEMT device and manufacturing method thereof, file e31e124e-3917-987f-e053-3705fe0a095a
|
33
|
|
單一或多重閘極場平板之製造, file e31e124e-6b46-987f-e053-3705fe0a095a
|
31
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Hemt transistor including field plate regions and manufacturing process thereof, file e31e124f-c8c6-987f-e053-3705fe0a095a
|
31
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|
Fabrication of single or multiple gate field plates, file e31e124d-79b7-987f-e053-3705fe0a095a
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30
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Double-channel hemt device and manufacturing method thereof, file e31e124e-3ad8-987f-e053-3705fe0a095a
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27
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Fabrication of single or multiple gate field plates, file e31e124e-6b40-987f-e053-3705fe0a095a
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25
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Fabrication of single or multiple gate field plates, file e31e124d-7756-987f-e053-3705fe0a095a
|
24
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Fabrication of single or multiple gate field plates, file e31e124d-79b8-987f-e053-3705fe0a095a
|
24
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Fabrication of single or multiple gate field plates, file e31e124e-91a4-987f-e053-3705fe0a095a
|
24
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Double-channel hemt device and manufacturing method thereof, file e31e124e-3919-987f-e053-3705fe0a095a
|
23
|
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Fabrication of single or multiple gate field plates, file e31e124e-6b42-987f-e053-3705fe0a095a
|
21
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HEMT transistor of the normally off type including a trench containing a gate region and forming at least one step, and corresponding manufacturing method, file e31e124f-bb21-987f-e053-3705fe0a095a
|
17
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Double-channel hemt device and manufacturing method thereof, file e31e124f-bf9f-987f-e053-3705fe0a095a
|
16
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Temperature-Independent Current Dispersion in 0.15 μm AlGaN/GaN HEMTs for 5G Applications, file d9ceddae-284f-4a83-904a-1d8f5352ce85
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14
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包括场板区域的hemt晶体管及其制造工艺, file e31e124f-8cba-987f-e053-3705fe0a095a
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12
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Gate-Bias Induced RON Instability in p-GaN Power HEMTs, file 1ad44d5f-fca6-4f92-a132-0a8305f39de2
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7
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Study of 100V GaN power devices in dynamic condition and GaN RF device performances in sub-6GHz frequencies, file ba47c161-6402-429e-a898-ddb56a5c2837
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6
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Double-channel hemt device and manufacturing method thereof, file e31e124f-9480-987f-e053-3705fe0a095a
|
6
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Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability, file ad576623-bf94-4a18-a901-d20a428a90c4
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5
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High Linearity Class B Power Amplifiers in GaN HEMT Technology, file e31e124b-b8e2-987f-e053-3705fe0a095a
|
4
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|
A novel GaN HEMT degradation mechanism observed during HTST test, file e31e124d-5fd1-987f-e053-3705fe0a095a
|
3
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|
Trap analysis on GaN HEMT after DC accelerated tests, file e31e124b-bfee-987f-e053-3705fe0a095a
|
2
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Very High Power Field-Plate GaAs PHEMT technology for C and X -band applications, file e31e124b-c524-987f-e053-3705fe0a095a
|
2
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Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs, file e31e124e-465d-987f-e053-3705fe0a095a
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2
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Hole Virtual Gate Model Explaining Surface-Related Dynamic RON in p-GaN Power HEMTs, file 7e0ea177-b829-401a-adf8-f44baee20858
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1
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T-CAD simulations study on drain leakage current and its correlation with gate current for AlGaN/GaN HEMTs, file a6802d1d-4410-4243-abd6-e87b67f3a981
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1
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Surface-related drain current dispersion effects in AlGaN-GaN HEMTs, file e31e124a-95bc-987f-e053-3705fe0a095a
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1
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Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements, file e31e124b-5050-987f-e053-3705fe0a095a
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1
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AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction, file e31e124b-523b-987f-e053-3705fe0a095a
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1
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High Robustness GaN HEMT Subject to Reverse Bias Stress, file e31e124b-b7dd-987f-e053-3705fe0a095a
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1
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Effects of Thermal Annealing on Current Degradation in Enhancement Mode Pd gate InAlAs/InGaAs/InP pHEMTs, file e31e124b-b809-987f-e053-3705fe0a095a
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1
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Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs, file e31e124b-b8a1-987f-e053-3705fe0a095a
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1
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Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs, file e31e124b-bcd2-987f-e053-3705fe0a095a
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1
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Design of GaN HEMTs for Power Switching Operation, file e31e124b-bf35-987f-e053-3705fe0a095a
|
1
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Study of GaN HEMTs degradation by numerical simulations of scattering parameters, file e31e124b-bfec-987f-e053-3705fe0a095a
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1
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p-GaN/AlGaN/GaN Enhancement-Mode HEMTs, file e31e124b-c194-987f-e053-3705fe0a095a
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1
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Design, Fabrication and Characterization of Γ Gate GaN HEMT for High-Frequency/Wide-Band applications, file e31e124b-c299-987f-e053-3705fe0a095a
|
1
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Transient Phenomena in GaAs and GaN Devices, including Electroluminescence and Emission Spectroscopy, for Future THz Applications, file e31e124b-c29d-987f-e053-3705fe0a095a
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1
|
|
Impact of Hot Electrons on the Reliability of AlGaN/GaN High Electron Mobility Transistors, file e31e124b-c429-987f-e053-3705fe0a095a
|
1
|
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Correlation between dynamic Rdson transients and Carbon related buffer traps in AlGaN/GaN HEMTs, file e31e124b-e0fa-987f-e053-3705fe0a095a
|
1
|
|
GaN RF and GaN Power – Device Parameter Drifts Analysis, file e31e124d-5fcf-987f-e053-3705fe0a095a
|
1
|
|
Evolution of on-resistance (RON) and threshold voltage (VTH) in GaN HEMTs during switch-mode operation, file e31e124e-5814-987f-e053-3705fe0a095a
|
1
|
|
Study of threshold voltage instability in E-mode GaN MOS-HEMTs, file e31e124e-98a5-987f-e053-3705fe0a095a
|
1
|
| Totale |
4.615 |
