The on-resistance (RON) degradation in normally-OFF GaN high electron mobility transistors has been evaluated both experimentally and by means of numerical simulations by analyzing its drift during device pulse-mode operation. Experimental data showed that the device RON measured during the on-time interval of the switching period increased with time resulting in a thermally activated process with an activation energy $EA=0.83$ eV. For the first time, numerical simulations have been carried out in order to evaluate the device RON drift during pulse-mode operation and to understand the physical phenomena involved. A good qualitative agreement between experimental and simulated data has been obtained when considering in the simulated device simply a hole trap located at 0.83 eV from the GaN valence-band, an energy level which has been linked in previous works to carbon-doping within the GaN buffer.

Experimental and Numerical Evaluation of RON Degradation in GaN HEMTs during Pulse-Mode Operation / Chini, Alessandro; Iucolano, Ferdinando. - In: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. - ISSN 2168-6734. - 5:6(2017), pp. 491-495.

I documenti presenti in Iris Unimore sono rilasciati con licenza Creative Commons Attribuzione - Non commerciale - Non opere derivate 3.0 Italia, salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Powered by IRIS-about IRIS-Utilizzo dei cookie

 Copyright © 2021